PN2218

2N718A FAIRCHILD | Alldatasheet

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“FAIRCHILD SEMICONDUCTOR 4 De Bayese74 ooazsoy s Bf . 3469674 FAIRCHILD SEMICONDUCTOR 84D 27504 Dam ed 2N718A 7-29-23 eee A Schlumberger Company ; NPN Small Signal General Purpose Amplifiers : . a i © Veco «-. 32 V (Min) PACKAGE © bre ».. 40-120 @ 150 mA, 20 (Min) @ 500 mA 2N718A 70-18 2N1613 10-5 ABSOLUTE MAXIMUM RATINGS (Note 1) Temperatures Storage Temperature 65° to 200°C Operating Junction Temperature 200°C | i Power Dissipation (Notes 2 & 3) Total Dissipation at 718A 1613 25°C Ambient Temperature osmW 0.8 W 400°C Ambient Temperature 1.0 mW 17W 25°C Case Temperature 1.8 W 3.0W Voltages & Currents Veco Collector to Emitter Voltage 32V Veen Collector to Emitter Voltage 50V (Roe < 10 1) (Note 4) Veo Collector to Base Voltage 75V Veso Emitter to Base Voltage 7.0V ELECTRICAL CHARACTERISTICS (25°C Ambient Temperature unless otherwise noted) (Note 6) ‘SYMBOL | CHARACTERISTIC [min [Max | Units | TEST CONDITIONS BVeso__| Collector to Base Breakdown Voltage |_75 | | V__| lc=0.1 mA, le =0 BVeno | Emitter to Base Breakdown Voltage | 7.0 | | V_ | te=0.1 mA, b=0 ‘exo [EmitterCurent_ | S| 10_(| nA | Ven = 5.0, te =0 loso Collector Cutoff Current 70 | nA | Vos =60V, te =0 10_| pA _| Vos = 60V, le = 0, Ta = 150°C . bre DC Current Gain [20 | | sc = 0.1 mA, Vee = 10V tre DG Pulse Current Gain (Note 5) 40 lo = 150 MA, Vee = 10 35 le = 10 MA, Vee = 10 V | 2 | c= 500 mA, Ver = 10

20 Ie = 10 MA, Vee = 10 V, Ta = 55°C

NOTES: 1 nese ratings are limiting values above which the serviceabilly of any individual semiconductor device may be impaired 2. ‘These are sioady state Units, The factory should be consulted on applications lavolving pulsed or low duty cycle operations F These sate ote a maximum junction temperatore of 200°C and junction-o-case thermal resistance of 87.2°C (derating factor af 10.3 mW/" Ch; Jmlonto ambient trermal resistance of 380° G/W (erating factor of 286 mW C) for 2N7TBA;junction-to-case thermal resistance of 58.6" CPW Mpcaticg tator of 17.2 mW") junetion-to-ambient thermal resstance of 218" C {éerating factor of 458 mW/*) for 2N613 4. Rating refers to. high current point whore collector to emitter voltage i lowest 5. Pulse conditions: length = 800 ps; duty cycle < 1% & For product family characteristic cures, refer to Curve Set T145 el 3-224 ae _|

. FAIRCHILD SEMICONDUCTOR 84 DEM a4b9b74 ooersos ? | i

3469674 FAIRCHILD SEMICONDUCTOR 64D 27505 De

. 2N718A/2N1613 T-3A-2% a ELECTRICAL CHARACTERISTICS (25°C Ambient Temperature unless otherwise noted) (Note 6) ‘SYMBOL| CHARACTERISTIC [MIN | MAX | UNITS. TEST CONDITIONS Veena | Collector to Emitter Sustaining Voltage| V__ |e =100 mA (pulsed), Ree < 10.0 i (Note 5) | Veews | Collector to Emitter Saturation Voltage| 75 | V_ |lc=150mA, l= 15mA (Note 5) Veewan | Base to Emitter Saturation Voltage | yet | Te = 150 mA, ly = 15 mA Note 5) Con Output Capacitance [ [2 [| pF_| Ves =10V, e=0 BE] Cre [Input Capacitance | | 60 |r [Ven =05V, <0 Tee High Frequency Current Gain [30| |__| te = 50 MA, Vee = 10, f = 20 MHz Die ‘Small Signal Current Gain 400 le = 1.0 MA, Vor =5.0 V, f= 1.0 kHz 150 lc = 5.0 MA, Vee = 10V, f= 4.0 kHz he Input Resistance 24 | 34 | le = 1.0MA, Vos =5.0 V, f = 1.0 kHz Foo Output Conductance 0.05 xmho | lo =1.0 MA, Vea = 5.0 V, f = 1.0 kHz ot umho | Ic = 5.0 MA, Voo = 10V, f= 1.0 kHz he Voltage Feedback Ratio x10 | le =1.0 MA, Vos = 5.0 V, f= 1.0 kHz x10 | lc = 5.0 MA, Vou = 10 V, f= 1.0 kHz ttt+t| (test circuit no. 287) |_| 30 | ns _| c= 80mA, Voo=20V NF Noise Figure dB | lo =0.3 mA, Vor = 10V, ‘ £=1.0 kHz, Rs = 510 0 BW =1.0Hz TEE EEEaE EEE 3-225 . 1

| (FAIRCHILD SEMICONDUCTOR 84 DEBByes674 ooe7sa6 1 ii

3469674 FAIRCHILD SEMICONDUCTOR 84D 27516 Da

A Schlumberger Company . NPN Small Signal General Purpose Amplifiers & Switches a . © Veco «.. 30 V (Min) PACKAGE 2N2218 TO-39 ABSOLUTE MAXIMUM RATINGS (Note 1) 2N2221 TO-18 PN2218 TO-92 Temperatures 2N _PN/FTSO PN2221 10-92 Storage Temperature -65° C to 200° C -55°C to 160° C FTSO2218 TO-236AA/AB : Operating Junction Temperature 178°C 150°C FTS02221 TO-236AA/AB Power Dissipation (Notes 2 & 3) Total Dissipation at 2N2218 = -2N2221 25°C Ambient Temperature 0.8 mW 0s Ww 25°C Case Temperature 3.0 W 1.8W Total Dissipation at PN2218 FTSO 26°C Ambient Temperature 0.625W 0.350 W* 25°C Case Temperature 1.0W Voltages & Currents Vceo Collector to Emitter Voltage 30V (Note 4) Veso Collector to Base Voltage 60V Veo Emitter to Base Voltage 5.0V le Collector Current 800 mA ELECTRICAL CHARACTERISTICS (25°C Ambient Temperature unless otherwise noted) (Note 6) SYMBOL | CHARACTERISTIC MIN] MAX | UNITS TEST CONDITIONS. : BVcoo | Collector to Base Breakdown Voltage | 60 | | V__|lc=10uA, le=0 BVeeo | Emitter to Base Breakdown Voltage | 50] | V_ | le=10uA, lo =0 : leso Emitter Cutoff Current |_| 10 | nA |[Ve=30V, b=0 i Teso Collector Cutoff Current nA | Vea = 50V, le = 01 HA _| Veo = 50V, le = 0, Ta = 150°C Notes: 1. These ratings are limiting values above which the servicesblly of any Individual semiconductor device may be impaired 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3, These ratings give a maximum junction temperature of 175°C; function-to-case thermal resistance of 80° C/W (deratng factor of 20 mW/* ), and Junction-to-ambient thermal resistance of 186° CW (derating factor of 583 wW/*C) for 2N2216; for 22221, junction-o-case thermal resistance of 83.5" CIW {Jerating factor of 12 mW/"C); junction-to-ambient thermal resistance of 300" G/W (derating factor of 333 mW/*C). These ratings give a maximum junction tomperature of 180°C, junction-to-case thermal resistance of 125° C/W (derating factor of 80 mW/*C);|unction-to-emblent thermat fealstence of 210" CA (dering lacor of 50 mW/* C) for PN2218 and PN222i; (TO-236) unction-to-ambient thermal resistance of 257° C/W (derating factor of 28 mW? C). 4. Rating refers to high current point where collector to emittr voltage is lowest. 5. Pulse conditions: length = 300 us: duly cycle < 2%. 6. For product family charactariafc curves, refer to Curve Set T1485 *” Package mounted on $9.5% alumina 8 mm x 8 mm x 0.6 mm. TS 3-236

• FAIRCHILD SEMICONDUCTOR 64 DEM S4b9b74 027517 3 T

3469674 FAIRCHILD SEMICONDUCTOR 84D 27517, De

Ty 24.93 : ELECTRICAL CHARACTERISTICS (25° C Ambient Temperature unless otherwise noted) (Note 6) SYMBOL| CHARACTERISTIC | MIN. | MAX | UNITS | TEST CONDITIONS . tre DG Current Gain (Note 5) 40 | 120 lo = 160 MA, Vor = 10V | 20 lo = 180 MA, Vee = 1.0 V \\ 35 lo = 10 mA, Vce = 10 V / 25 lc = 1.0 mA, Vee =10V 20 lo = 0.1 MA, Vee = 10 V 20 le = 500 mA, Voce = 10 V Veeos | Collector to Emitter Sustaining V_ | tc =10 mA (pulsed), le =O ¥ Voltage (Note 5) Vesa | Collector to Emitter Saturation V__ | tc= 150 mA, ls = 50 mA Voltage (Note 5) V_| lc = 500 mA, Is = 50 mA Veeaw | Base to Emitter Saturation V_ | c= 160 mA, fp = 15 mA Voltage (Note 5) V_| 1c = 500 mA, Is = 50 mA Ge [Output Capecitance || 80 | pF |Ve=10¥, k=O : hie [High Frequency Current Gain | 2.6 ||| le = 20 MA, Vee = 20'V, f= 100 MHz Ra(he) | Real Part of Common Emitter lo = 20 MA, Vee = 20 V, f = 300 MHz High Frequency Input Impedance 3-287

F : = _ [FAIRCHILD SEMICONDUCTOR &y DEQ s4b9b74 goersia s T - 3469674 FAIRCHILD SEMICONDUCTOR 84D 27518 D= —ae 2N/PN/FTSO2218A 735-7? —— 2N/PN/FTSO2221A chlumberger ‘ NPN Small Signal General Purpose Amplifiers & Switches i i © Veco «+. 40 V (Min) @ 10 mA PACKAGE . © bre ... 40-120 @ 150 mA 2N2218A 0-39 ete '35 ns (Max) @ 150 mA, ton ... 285 ns (Max) @ 150MA 2N2221A 10-18 «Complements ... 2N/PN/FTSO2904A Series PN2218A . 70-92 PN2221A 70-92 ABSOLUTE MAXIMUM RATINGS (Note 1) FTSO2218A TO-236AA/AB FTSO2221A TO-236AA/AB . Temperatures 2N _-PN/FTSO : Storage Temperature -65° C to 200°C -55°C to 150°C ‘ Operating Junction Temperature 175°C 450°C Power Dissipation (Notes 2 & 3) Total Dissipation at 2218A 222A 25°C Ambient Temperature (Note 7) 0.8 W 0s W 25°C Case Temperature 3.0 W 1.8W Total Dissipation at PN FTSO 25°C Ambient Temperature 0.625 W 0.350 W* 25°C Case Temperature 1.0W Voltages & Currents Veco Collector to Emitter Voltage 40V (Note 4) Veso Collector to Base Voltage 75V Veo Emitter to Base Voltage 60V le Collector Current 800 mA ELECTRICAL CHARACTERISTICS (25° C Ambient Temperature unless otherwise noted) (Note 6) ‘SYMBOL | CHARACTERISTIC UNITS: TEST CONDITIONS BVceo _| Collector to Emitter Breakdown Voltage V_ fic=10mA, lb =0 . (Note 5) BVeco _| Emitter to Base Breakdown Voltage feo [| V_|tc=0, = 10nA BVcso _| Collector to Base Breakdown Voltage [7s | | Vv |tc= 10nd, = 0 Notes: NOTES: stings are limiting values above which the serviceability of any invidval semiconductor device may be impaled: ao range ady state limits, Te factory should be consulted on applications involving pulsed or low duly cycle operations, 2 na a aa imu uncton temperature of 75°C, junction-to-case thermal sistance of "G/M (erating actor of 2 Cant inate Frese Ln cance of 188° OM (Gnating factor of 838 mW/*C) for 2NZZIBA. For te 2N2221A, junction to-case henna mutans ot ton oer labor of 12 mW/O),junctionto-amblont thermal eistance of 300° CW (erating factor of 3:89 Wir C), These ange ET Feo co eeature ot 150°G uncton-to-caso thermal resistance of 125° CW (draling Into of 80 mii” Can unoton se arene a nc ge lw dealing lato of 80m C) or PN22T8Aand PN2221A, ForFTSO2218Aand FTSO222tAjunction-o-ambionttnarmal reslatance of 357° CAV (derating factor of 28 mW/*C). 4. Rating refers to. high current point where collector to emitter voltage is lowest §. Pulse conditions: length = 300 ps; duty cyete = 1%. ©. For product family charactristfe cures, refer to Curve Set T145. Package mounted on 99.6% alumina & mm x 8 mm x 06 mm. 3-238 — i I

—FAIRCHILD SEMICONDUCTOR ay DEB sueae74 oo2e7s19 7 I

3469674 FAIRCHILD SEMICONDUCTOR 84D 27513 Da

. . 2N/PN/FTSO2218A . . 2N/PN/FTSO2221A “T_ 45- as : ! ELECTRICAL CHARACTERISTICS (25°C Ambient Temperature unless otherwise noted) (Note 6) : SYMBOL] CHARACTERISTIC [MIN | MAX | UNITS | TEST CONDITIONS leex Collector Reverse Current [ [10 | nA | Vee = 60 V, Veo = 3.0V | leso Collector Reverse Current 10 | nA |Voo=60V, le=0 | 10_| WA _|Vco=60V, le = 0, Ta= 150°C | ae | itor te Base Gute Curent | | 10” | “nA [Ven=80V, o=0 Im [Base Curent iY) 20] a vee = 80, Ver = OV | hee DC Current Gain 20 Ig = 100 WA, Vee = 10V EY 25 to = 1.0 MA, Vee = 10 V 3 (Note 5) 35 Ic = 10 MA, Vee = 10 V (Note 5) 40 lo = 150 mA, Vee = 10 V (Note 5) 25 Ie = 500 mA, Vee = 10 V (Note 5) 15 le = 10 MA, Voe = 10 V, Th = -55°C (Note 5) 20 lc = 150 MA, Voe = 1.0 V ' Veewan | Collector to Emitter Saturation Voltage 03 V_ [c= 150 mA, Ip = 15 mA (Note 5) 1.0 V_| le = 600 mA, Ip = 50 mA Veewav | Base to Emitter Saturation Voltage V_ | le = 150 mA, te = 15 mA (Note 5) Vv | le =500 mA, ls = 50 mA Con Output Capacitance [8.0] pF | Vee = 10V, le = 0, f = 100 kHz Cw Input Capacitance |_| 25 | pF_ | Ves =0.5V, lc =0, f = 100 kHz Tee High Frequency Current Gain [25 | | __—‘| 6 = 20mA, Vee =5.0V, f= 100 MHz Hie ‘Small Signal Current Gain Io = 1.0 MA, Vea = 10V, f = 1.0 kHz Ig = 10 MA, Vou = 10 V, f = 1.0 kHz Pie Input Resistance 35 | kM [1c=1.0mA, Vos = 10V, f= 1.0 kHz 14.0 | kM _|1co=10 mA, Vos =10V, f= 1.0 kHz Roe ‘Output Conductance 3.0 | 15 | umho | lo= 1.0 mA, Vee = 10V, f= 1.0 kHz 40 | 100 | wmho | tc=10 MA, We = 10 V, f= 1.0 kHz Te Voltage Feedback Ratio le = 1.0 MA, Veo = 10 V, f= 1.0 kHz Io = 10 MA, Vou = 10 V, f = 1.0 KHz Re (hie) | Real Part of Common Emitter Ic = 20 MA, Voe = 20V High Frequency Input Impedance f= 300 MHz ta Turn On Delay Time (testcircuitno.231){ | 10 | ns _| lcs=150mA, Voc=30V, lay =15mA tr Rise Time (test circuit no. 231) || 25 | ns | tos=150mA, Voc=30V, ler =15mA ts Storage Time (test circuit no. 232) Ic = 150 mA, Vec = 30 V, ley = toa = 15 mA tw Fall Time (test circuit no. 232) Ies = 150 MA, Veo = 30 V, lox = las = 15 MA Ta Active Region Time Constant [25 [ns | tc = 150 mA, Vee = 30V t’'Ce__| Collector to Base Time Constant | [150] ps [tc =20 mA, Vee = 20V, f= 31.8 MHz A 3-239 : : ' . wot

FAIRCHILD SEMICONDUCTOR By DE I 3469674 027520 3 r 2 3469674 FAIRCHILD SEMICONDUCTOR 84D 27520 D CHILD 2N2219/PN2219/FTSO2219 a ae 2N2222/PN2222/FTSO2222 NPN Small Signal General Purpose Amplifiers & Switches > — F-3 $-3 ! . © Veeco ... 30 V (Min) PACKAGE : ! © he ... 100-300 @ 150 mA, 30 (Min) @ 500 mA 2N2219 0-39 i 2N2222 TO-18 H ABSOLUTE MAXIMUM RATINGS (Note 1) PN2219 10-92 | PN2222 T0-92 i ‘Temperatures 2N -PN/FTSO FTSO2219 TO-236AA/AB | Storage Temperature 65° C to 200° C-55°C to 150°C FTS02222 TO-236AA/AB | Operating Junction Temperature 175°C 150°C : Power Dissipation (Notes 2 & 3) Total Dissipation at 2N2219 © 2N2222 25°C Ambient Temperature 0.8 mW 05 W 25°C Case Temperature 3.0W 1.8W Total Dissipation at PN2219 FTSO 25°C Ambient Temperature 0.625W 0.350 W* 25°C Case Temperature 1.0W Voltages & Currents Veeo Collector to Emitter Voltage 30V (Note 4) Veso Collector to Base Voltage 60V Veso Emitter to Base Voltage 5.0V | le Collector Current 800 mA ELECTRICAL CHARACTERISTICS (25° C Ambient Temperature unless otherwise noted) (Note 6) SYMBOL | CHARACTERISTIC [min [MAX | UNITS | TEST CONDITIONS BVceo _| Collector to Base Breakdown Voltage | 60 | | V_ |le=10uA,le=0 BVeeo _| Emitter to Base Breakdown Voltage | 50 | | V_ |le=10uA, =0 leo0 Emitter Cutoff Current [| 10 | nA |Vee=3.0V,b=0 : Toso Collector Cutoff Current nA | Vos = 50V, le =0 HA _| Vos = 50V, le = 0, Ta = 150°C NOTES: 1. Those ratings are limiting values above which the serviceability of any individual semiconductor device may be impaired. 2. Those are steady stato limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3. Those ratings glve a maximum junction temperature of 176°C; function-o-case thermal resistance of 50" C/W (dorating factor of 20 mW/*C), and junction-to-amblent thermal resistance of 186° C/W (derating factor of 6.33 wW/* ) for 2N2218; for 2N2222, junction-to-case thermal resistance of 83.5" CW (dorating factor of 12 mW/*C);junction-to-ambiont thermal resistance of 300° CAW (deraling factor of 333 mWP* C). These ratings give @ maximum junction temperature of 150° C, junction-to-case thermal resistance of 125° C/W (derating factor of 8.0mW/* C); junction-to-ambient thermal resistance of 200° C/W (derating factor of 6.0 mW/* C) tor PN2219 and PN2222; (TO-236) junction-to-ambient thermal resistance of 357° GW (derating factor of 28 mW/* C). 4. Rating eters lo a high current point where collector to emitter vollage is lowest 5. Pulse conditions: length = 300 ys: duty cycle < 2%, 6. For product family characteristic curves, refer to Curve Set T145. * Package mounted an 99.5% alumina 8 mm x 8 mm x 0.6 mm. el 3-240

• FAIRCHILD SEMICONDUCTOR . A 84 DE suese7y agoe7sel § | , 3469674 FAIRCHILD SEMICONDUCTOR 84D 27521 Do 2N2219/PN2219/FTSO2219 2N2222/PN2222/FTSO2222 T- 3§-a> ELECTRICAL CHARACTERISTICS (25°C Ambient Temperature unless otherwise noted) (Note 6) , SYMBOL| CHARACTERISTIC MIN [MAX | UNITS | TEST CONDITIONS | tre DC Current Gain (Note 5) 700 Te = 150 MA, Vee = 10V : 50 ig = 150 MA, Vee = 1.0V

75 Ig = 10 mA, Voe = 10V

50 lo = 0.1 mA, Vez = 10 V 35 Ig =0.1 MA, Vor = 10V

30 Ig = 500 MA, Vee = 10 V

Vecounr | Collector to Emitter Sustaining V |e = 10 mA (pulsed), ls = 0 Voltage (Note 5) Vecan | Collector to Emitter Saturation 04 V__| te = 150 mA, lp = 50 mA Voltage (Note 5) 1.6 v__| tc = 500 mA, ls = 50 mA Voren | Base to Emitter Saturation 13 V_ | tc = 150 mA, lp = 15 mA Voltage (Note 5) 26 V__ | te = 500 mA, la = 50 mA tie [High Frequency Current Gain [28 | |_| Ie = 20 mA, Vor = 20V, f= 100 MHz Pa(he) | Real Part of Common Emitter High A | le =20 MA, Vee = 20 V, f = 300 MHz Frequency Input Impedance 3-241

. Q FAIRCHILD SEMICONDUCTOR . 84 DEBssb5b74 O0e7see 7 r .

3469674 FAIRCHILD SEMICONDUCTOR 84D 27522 D

_ = 2N/PN/FTSO/2219A FAIRCHILD eatin error 2N/PN/FTSO2222A A Schlumberger Company . NPN Smail Signal General Purpose : Amplifiers & Switches i 785.45 I : © Voeo ... 40 V (Min) @ 10 mA PACKAGE © re ... 100-300 (2N/PN/FTSO2219A, 2N/PN/FTSO2222A) 2N2219A To-39 @ 150 mA 2N2222A 10-39 © Complements ... 2N/PN/FTSO2904A Series PN2222A T0-92 FTSO2219A TO-238AA/AB ABSOLUTE MAXIMUM RATINGS (Note 1) FTSO2222A TO-236AA/AB Temperatures 2N —_PN/FTSO | Storage Temperature 65°C to 200°C -55°C to 150°C ! Operating Junction Temperature 175°C 150°C Power Dissipation (Notes 2 & 3) Total Dissipation at 2N2219A —2N2222A 25°C Ambient Temperature (Note 7) 0.8 W 05 W 25°C Case Temperature 3.0W 1.8W PN FTSO 25°C Ambient Temperature 0.625 W 0.350 W* 25°C Case Temperature 1.0W Voltages & Currents Veeo Collector to Emitter Voltage 40V (Note 4) Veeo Collector to Base Voltage 75V Veoo Emitter to Base Voltage 60V le Collector Current 800 mA ELECTRICAL CHARACTERISTICS (25°C Ambient Temperature unless otherwise noted) (Note 6) SYMBOL | CHARACTERISTIC MIN UNITS TEST CONDITIONS BVcco | Collector to Emitter Breakdown Voltage V_ |ic=10mA, la=0 . (Note 5) BVeso | Emitter to Base Breakdown Voltage [60 | | V_ |lc=0,le=10uA BVcso | Collector to Base Breakdown Voltage [75 | | V__|lc=10 uA, o=0 loex Collector Reverse Current [ [10 [ nA _|Vce=60V, Vea =3.0V Notes: : 4. These ratings are imiting values above which the serviceability of any individual semiconductor device may be Impaired. : 2. These are steady slate limits. The factory should be consulted on applications involving pulsed or low duty eycle operations. 3. These ratings give a maximum junction temperature of 175°C, Junction-to-case thermal resistance of 60° C/W (derating factor of 20 mW/*C), and Junction-to-ambient thermal resistance of 188° C/W (deratng factor of 6.33 mW/*C) for 2219A. For he 2N2222A, junction-o-case thermal resistance of 83.5° C/W (derating factor of 12 mW/* C), junction-to-ambient thermal resistance of 300° C/W (derating factor of 3.33 mW/° C). These ratings give a ‘maximum junction temperature of 160°C. junction-to-case thermal resistance o 125" CW (deratin factor of 80 mW/"C):unction-to-amblent thermal resistance of 200° CM (derating factor of 80 mW/* C) for PN2ZI9A, PN2222A. For the FTSO22194/2222A, these ratings give @ maximum junction-to- ambient thermal resistance of 357° CAW (deraing factor of 28 mW/* C) 4. Raling refers to a high current point where collector to emitier vollage is Lowest 5. Pulse conditions: length = 900 ja; duty cycle = 1%. 6. For product family characteristic curves, reler to Curve Set T14S, * Package mounted on 99.5% alumina 8 mm x 8 mm x 06 mm. SS el 3-242 . 1 > 1

_ -FAIRCHILD SEMICONDUCTOR a4 DEB syene74 oge7523 4 T

3469674 FAIRCHILD SEMICONDUCTOR 84D 27523 De

: 2N/PN/FTSO2219A 2N/PN/FTSO2222A T-35- 29 eS ELECTRICAL CHARACTERISTICS (25°C Ambient Temperature unless otherwise noted) (Note 6) SYMBOL | CHARACTERISTIC [min | MAX | UNITS TEST CONDITIONS jl Teeo Collector Reverse Current nA | Vea = 60V, le=0 H HA_| Vea = 60V, le = 0, Ta = 150°C \\ le20 Emitter to Base Cutoff Current | [to [nA | Ves =3.0V, bo =0 . i tu ___ | BaseCurrent || 20 | nA | ven = 3.0, Vee = 60V Tre DC Current Gain 35 le = 100 yA, Vee = 10 V 50 le=1.0 MA, Vee = 10 V ‘ (Note 5) 76 lo = 10 MA, Voe = 10 V 3 (Note 5) 100 lo = 150 mA, Vee = 10 V (Note 5) 40 le = 500 MA, Vee = 10V (Note 5) 35 lo = 10 MA, Vee = 10 V, Ta = -85°C (Note 5) 50 lc = 150 MA, Vee = 1.0'V Veewan | Collector to Emitter Saturation Voltage 03 V_ | le= 150 mA, lp = 18 mA (Note 5) 1.0 V__| tc =500 mA, ls = 50 mA Veewsn | Base to Emitter Saturation Voltage V | lc = 150 mA, le = 15 mA (Note 5) V_| lo = 500 mA, Ip = 50 mA Cov Output Capacitance | [80 [pF | Veo = 10V, le =0, f = 100 kHz Ce [input Capacitance [25 BF | Ven = 05 V, lo= 0, f= 100 ke he High Frequency Current Gain [30 f | _| c= 20 mA, Voe=5.0V, 1= 100 MHz Hite Small Signal Current Gain 50 | 300 Io = 1.0 MA, Veo = 10V, f= 1.0 kHz 75_| 375 Io = 10 mA, Vea = 10 V, f = 1.0 kHz hie Input Resistance KO | le = 1.0 MA, Vee = 10V, f= 1.0 KHz kO_| lc =10 mA, Vea = 10 V, f= 1.0 kHz Noo Output Conductance lo = 1.0 mA, Vee = 10 V, f= 1.0 kHz lo = 10 MA, Vor = 10 V, f = 1.0 kHz he Voltage Feedback Ratio 800 | x10 | ic = 1.0 mA, Vos = 10V, f= 1.0 kHz 400_| _x10°6 | Ic = 10 MA, Vos = 10 V, f = 1.0 kHz Re (hi | Real Part of Common Emitter lo = 20 MA, Vee = 20V Frequency Input Impedance f = 300 MHz ta Turn On Delay Time (testcircuitno.231} | 10 | ns _| los =180mA, Vec=30V, ls =15mA te Rise Time (test ciroult no. 231) [| 25 [ns | los= 180 mA, Voc =30V, ler =15mA te Storage Time (test circuit no, 232) Ios = 150 mA, Veo = 30 V, lor = lea = 15:mA tr Fall Time (test circuit no. 282) ns | les = 150 MA, Veo = 80 V, oy = loa = 15 mA Ta Active Region Time Constant [2s [ns | c= 180 mA, Vee = 30V te'Ce | Collector to Base Time Constant | | 150 | ps _| Io= 20 mA, Voz = 20V,1=31.8MHz NF Noise Figure to © 100 uA; Vos = 10 V. Ro= 1.02, BW = 1.0 Hz, f= 1.0 kHz er 3-243