PMN34UN

PMN34UN VBSEMI | Alldatasheet

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Technical content

N-Channel 30 V (D-S) MOSFET

FEATURES

• Halogen-free According to IEC 61249-2-21 Definition  TrenchFET ® Power MOSFET  Low On-Resistance  100 % Rg Tested  Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

 DC/DC Converters, High Speed Switching Notes: a. Based on TC = 25 °C. b. Surface mounted on 1" x 1" FR4 board. c. t = 5 s. d. Maximum under steady state conditions is 166 °C/W. e. Package limited. PRODUCT SUMMARY VDS (V) RDS(on) () ID (A)a, e Qg (Typ.) 0.023 at VGS = 10 V 6 4.2 nC 0.027 at VGS = 4.5 V 6 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Vo ltage VDS 30 VGate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C) TC = 25 °C ID A TC = 70 °C 6e TA = 25 °C 5.5b, c TA = 70 °C 4.4b, c Pulsed Drain Current (t = 300 µs) IDM 25 Continuous Source-Drain Diode Current TC = 25 °C IS 2.1 TA = 25 °C 1.1b, c Maximum Power Dissipation TC = 25 °C PD 2.5 WTC = 70 °C 1.6 TA = 25 °C 1.3b, c TA = 70 °C 0.8b, c Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C Soldering Recommendations (Peak Temperature) 260 THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maxi mum Unit Maximum Junction-to-Ambientb, d t  5 s R thJA 75 100 °C/W Maximum Junction-to-Foot (Drain) Steady State R thJF 40 50 PMN34UN www.VBsemi.com Top View D D G D D S TSOP-6 g A ll data sheet.com

Notes: a. Pulse test; pulse width  300 µs, duty cycle  2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause perma nent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. Typ. Max. Un it Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA 30 V VDS Temperature Coefficient VDS/TJ ID = 250 µA 30 mV/°C VGS(th) Temperature Coefficient VGS(th)/TJ - 4.8 Gate-Source Threshold Voltage VGS(th) VDS = VGS , ID = 250 µA 0.5 1.5 V Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 30 V, VGS = 0 V 1 µAVDS = 30 V, VGS = 0 V, TJ = 70 °C 10 On-State Drain Currenta ID(on) VDS 5 V, VGS = 10 V 20 A Drain-Source On-State Resistancea RDS(on) VGS 10 V, ID = 5.5 A 0.023 VGS 4.5 V, ID = 5 A 0.027 Forward Transconductancea gfs VDS = 15 V, ID = 5.5 A 24 S Dynamicb Input Capacitance Ciss VDS = 15 V, VGS = 0 V, f = 1 MHz 424 pFOutput Capacitance Coss 100 Reverse Transfer Capacitance Crss 42 Total Gate Charge Qg VDS = 15 V, VGS = 10 V, ID = 5.5 A 8.2 13 nC VDS = 15 V, VGS = 4.5 V, ID = 5.5 A 4.2 7 Gate-Source Charge Qgs 1.4 Gate-Drain Charge Qgd 1.4 Gate Resistance Rg f = 1 MHz 2.5 12.6 25.2  Tur n-On Delay T ime td(on) VDD = 15 V, RL = 3.4  ID  4.4 A, VGEN = 4.5 V, Rg = 1  61 2 ns Rise Time tr 20 30 Turn-Off Delay Time td(off) 14 21 Fall Time tf 10 20 Tur n-On Delay Tim e td(on) VDD = 15 V, RL = 3.4  ID  4.4 A, VGEN = 10 V, Rg = 1  Rise Time tr 11 20 Turn-Off Delay Time td(off) 20 30 Fall Time tf 71 4 Drain-Source Body Diode Characteristics Contin uous Source-Drain Diode Current IS TC = 25 °C 2.1 A Pulse Diode Forward Current ISM 25 Body Diode Voltage VSD IS = 4.4 A, VGS 0 V 0.82 1.2 V Body Diode Reverse Recovery Time trr IF = 4.4 A, dI/dt = 100 A/µs, TJ = 25 °C 13 20 ns Body Diode Reverse Recovery Charge Qrr 61 2 n C Reverse Recovery Fall Time ta 8 ns Reverse Recovery Rise Time tb 5 PMN34UN www.VBsemi.com g A ll data sheet.com

TYPICAL CHARACTERISTICS (25 °C, unless othe rwise noted) Output Characteristics On-Resistance vs. Drain Current and Gate Voltage Gate Charge 00 .511 .52 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) VGS = 10 V thru 4 V VGS = 3 V 0.016 0.020 0.024 0.028 0.032 0 5 10 15 20 25 RDS(on) - On-Resistance (Ω) ID -D r a i n C u r r e n t ( A ) VGS = 4.5 V VGS = 10 V 02468 1 0 VGS - Gate-to-Source Voltage (V) Qg - Total Gate Charge (nC) VDS = 24 V VDS = 15 V VDS = 8 V ID = 5.5 A Transfer Characteristics Capacitance On-Resistance vs. Junction Temp erature 00 . 511 . 522 . 53 ID - Drain Current (A) VGS - Gate-to-Source Voltage (V) TC = 25 °C TC = 125 °C TC = - 55 °C 150 300 450 600 0 6 12 18 24 30 C - Capacitance (pF) VDS - Drain-to-Source Voltage (V) Ciss Coss Crss 0.7 0.9 1.1 1.3 1.5 1.7 - 5 0 - 2 50 2 55 07 5 1 0 0 1 2 5 1 5 0 RDS(on) -O n - R e s i s t a n ce (No rmalized) TJ - Junction Temperature (°C) ID = 5.5 A VGS = 10 V, ID = 5.5 A VGS = 4.5 V, ID = 5 A PMN34UN www.VBsemi.com g A ll data sheet.com

TYPICAL CHARACTERISTICS (25 °C, unless otherwise not ed) Source-Drain Diode Forward Voltage Threshold Voltage 0.1 IS - Source Current (A) VSD - Source-to-Drain Voltage (V) TJ = 150 °C TJ = 25 °C 1.0 1.2 1.4 1.6 1.8 2.0 - 5 0 - 2 50 2 55 07 5 1 0 0 1 2 5 1 5 0 VGS(th) (V) TJ -T e m p e r a t u r e (°C) ID = 250 μA On-Resistance vs. Gate-to-Source Voltage Single Pulse Power (Junction- to-Ambient) 0.015 0.030 0.045 0.060 2468 1 0 RDS(on) - On-Resistance (Ω) VGS - Gate-to-Source Voltage (V) TJ = 125 °C TJ = 25 °C ID = 5.5 A 0.01 0.1 1 10 100 1000 Time (s) Power (W) TA = 25 °C Safe Operating Area, Junction-to-Ambient 0.01 0.1 100 0.1 1 10 100 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified 100 ms Limited by RDS(on)* 1 ms TC = 25 °C Single Pulse BVDSS Limited 10 ms 100 μs 10 s, 1 s DC PMN34UN www.VBsemi.com g A ll data sheet.com

TYPICAL CHARACTERISTICS (25 °C, unless othe rwise noted) * The power dissipation P D is based on T J(max.) = 150 °C, using junction-to-cas e thermal resistance, and is mo re useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to de termine the current rating, when this rating falls below the package limit. Current Derating* 0 25 50 75 100 125 150 ID - Drain Current (A) TC - Case Temperature (°C) Power Derating, Junction-to-Foot 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 25 50 75 100 125 150 TC - Case Temperature (°C) Power (W) Power Derating, Junction-to-Am bient 0.0 0.2 0.4 0.6 0.8 1.0 0 25 50 75 100 125 150 TA - Ambient Temperature (°C) Power (W) PMN34UN www.VBsemi.com g A ll data sheet.com

TYPICAL CHARACTERISTICS (25 °C, unless otherwise not ed) Normalized Thermal Transient Impedance, Junction -to-Ambient 10-3 10-2 1 10 100010-110-4 100 0.2 0.1 Square WaveP ulse Duration (s) Normalized Effective Transient Thermal Impedance 0.1 0.01 Notes: PDM 1. Duty Cycle, D = 2. Per Unit Base = RthJA =1 6 6 ° C /W 3. TJM -T A =P DMZthJA(t) 4. Surface Mounted Duty Cycle = 0.5 Single Pulse 0.02 0.05 Normalized Thermal Transient Impedance, Junction-to -Foot 10-3 10-2 10110-110-4 0.2 0.1 Duty Cycle = 0.5 Square WaveP u lse Duration (s) Normalized Effective Transient Thermal Impedance 0.1 0.01 0.05 Single Pulse 0.02 PMN34UN www.VBsemi.com g A ll data sheet.com

www.VBsemi.com 2 3 Gauge Plane L 5 4 R R C 0.15 M B A b C 0.08

0.17 Ref

-C- Seating Plane A 1 A 2 A -A- D -B- E 1 E L 2 (L 1 ) c 4x 1 4x 1 e 2 3 6 5 4 C 0.15 M B A b -B- E 1 E e 5-LEAD TSOP 6-LEAD TSOP TSOP: 5/6−LEAD JEDEC Part Number: MO-193C MILLIMETERS INCHES Dim Min Nom Max Min Nom Max A 0.91 - 1.10 0.036 - 0.043 A 1 0.01 - 0.10 0.0004 - 0.004 e 0.95 BSC 0.0374 BSC L 0.32 - 0.50 0.012 - 0.020 L 1 0.60 Ref 0.024 Ref L 2 0.25 BSC 0.010 BSC 0 4 8 0 4 8 1 7 Nom 7 Nom ECN: C-06593-Rev. I, 18-Dec-06 DWG: 5540 g A ll data sheet.com

www.VBsemi.com RECOMMENDED MINIMUM PADS FOR TSOP-6 0.119 (3.023) Recommended Minimum Pads Dimensions in Inches/(mm) 0.099 (2.510) 0.064 (1.626) 0.028 (0.699) 0.039 (1.001) 0.020 (0.508) 0.019 (0.493) g A ll data sheet.com

prove reliability, function or design or for other reasons, product specifications and data are subject to ch ange without notice. Taiwan VBsemi Electroni cs Co., Ltd., branches, agents, employees, and all persons acting on its or their representatives (col lectively, the "Taiwan VBsemi"), assumes no responsibility for any errors, inaccuracies or incomplete data con tained in the table or any other any disclosure of any information related to the product.(www.VBsemi.com) Taiwan VBsemi makes no guarantee, representation or warranty on the product for any particular purpose of any goods or continu ous production. To the maximum extent permitted by applicable law on Taiwan VBsemi relinquished: (1) an y application and all liability arising out of or use of any products; (2) any and all liability, including but not li mited to special, consequential damages or incidental ; (3) any and all implied warranties, including a particul ar purpose, non-infringement and merchantability guarantee. Statement on certain types of applications are based on knowledge of the product is often used in a typical application of the g eneral product VBsemi Taiwan demand that the Taiwan VBsemi of. Statement on whether the product is suitable f or a particular application is non-binding. It is the customer's responsibility to verify specific product features in th e products described in the specification is appropriate for use in a particular application. Parameter data sheet s and technical specifications can be provided may vary depending on the application and performance over time . All operating parameters, including typical parameters must be made by customer's technical experts va lidated for each customer application. Product specifications do not expand or modify Taiwan VBsemi purchasing ter ms and conditions, including but not limited to warranty herein. Unless expressly sta ted in writing, Taiwan VBsemi products are not intended for use in medical, life saving, or life sustaining a pplications or any other application. Wherein VBsemi product failure could lead to personal injury or death, use o r sale of products used in Taiwan VBsemi such applications using client did not express their own risk. Contact you r authorized Taiwan VBsemi people who are related to product design applications and other terms and cond itions in writing. The information provi ded in this document and the company's products without a license, express or implied, by estoppel or otherw ise, to any intellectual property rights granted to the VBsemi act or document. Product names and trademarks re ferred to herein are trademarks of their respective representatives will be all. MaterialCategoryPol icy Taiwan VBsemi Electro nics Co., Ltd., hereby certify that all of the products are determined to be RoHS compliant and m eets the definition of restrictions under Directive of the European Parliament 2011/65 / EU, 2011 Nia n. 6. 8 Ri Yue restrict the use of certain hazardous substances in electrical and electronicequipmen t(EEE)-modification,unlessotherwisespecifiedasinconsistent.(www.VBsemi.com) Pleasenotethatsomed ocumentsmaystillrefertoTaiwanVBsemiRoHSDirective2002/95/EC.We confirm that all produ cts identified as consistent with the Directive 2002/95 / EC European Directive 2011/65/. Taiwan VBsemi Electron ics Co., Ltd. hereby certify that all of its products comply identified as halogen-free halogen -free standards required by the JEDEC JS709A. Please note that some Taiwanese VBsemi documents sti ll refer to the definition of IEC 61249-2-21, and we are sure that all products conformtoconfirmcomp liancewithIEC61249-2-21standardlevelJS709A. PMN34UN www.VBsemi.com A ll data sheet.com