PMLL5225B PHILIPS
Document overview
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Technical content
Product specification Supersedes data of November 1993
1996 Apr 26
1/3 page (Datasheet) M3D054
1996 Apr 26 2
Philips Semiconductors Product specification Voltage regulator diodes PMLL5225B to PMLL5267B
FEATURES
- Total power dissipation: max. 500 mW
- Tolerance series:±5%
- Working voltage range: nom. 3.0 to 75 V
- Non-repetitive peak reverse power dissipation: max. 40 W.
APPLICATIONS
- Low-power voltage stabilizers or voltage references.
DESCRIPTION
Low-power voltage regulator diodes in small hermetically sealed glass SOD80C SMD packages. The series consists of 43 types with nominal working voltages from 3.0 to 75 V. Fig.1 Simplified outline (SOD80C) and symbol. The cathode is indicated by a yellow band. handbook, 4 columns MAM215 ka LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). Note 1. If flanges are kept at Tflange≤ 75 °C.
ELECTRICAL CHARACTERISTICS
Tj=2 5°C; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT IF continuous forward current − 250 mA IZSM non-repetitive peak reverse current tp = 100µs; square wave; Tj=2 5°C prior to surge see Table “Per type” Ptot total power dissipation T amb =2 5°C; note 1 − 500 mW PZSM non-repetitive peak reverse power dissipation tp = 100µs; square wave; Tj=2 5°C prior to surge; see Fig.3 − 40 W tp = 8.3 ms; square wave; Tj≤ 55 °C prior to surge − 10 W Tstg storage temperature −65 +200 °C Tj junction temperature −65 +200 °C SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VF forward voltage I F = 200 mA; see Fig.4 − 1.1 V
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Philips Semiconductors Product specification Voltage regulator diodes PMLL5225B to PMLL5267BPer type Tj=2 5°C; unless otherwise specified. TYPE No. WORKING VOLTAGE VZ (V)(1) at IZtest DIFFERENTIAL RESISTANCE rdif(Ω ) at IZtest TEMP. COEFF. SZ (%/K) at IZ(2) TEST CURRENT IZtest (mA) DIODE CAP. C d (pF) at f = 1 MHz; at VR =0V REVERSE CURRENT at REVERSE VOLTAGE NON-REPETITIVE PEAK REVERSE CURRENT IZSM (A) at tp = 100µs; Tamb =2 5°CIR (µA) VR PMLL5225B 3.0 1600 −0.075 20 450 50 1.0 6.0 PMLL5226B 3.3 1600 −0.070 20 450 25 1.0 6.0 PMLL5227B 3.6 1700 −0.065 20 450 15 1.0 6.0 PMLL5228B 3.9 1900 −0.060 20 450 10 1.0 6.0 PMLL5229B 4.3 2000 ±0.055 20 450 5 1.0 6.0 PMLL5230B 4.7 1900 ±0.030 20 450 5 1.5 6.0 PMLL5231B 5.1 1600 ±0.030 20 300 5 2.0 6.0 PMLL5232B 5.6 1600 +0.038 20 300 5 3.0 6.0 PMLL5233B 6.0 1600 +0.038 20 300 5 3.5 6.0 PMLL5234B 6.2 1000 +0.045 20 200 5 4.0 6.0 PMLL5235B 6.8 750 +0.050 20 200 3 5.0 6.0 PMLL5236B 7.5 500 +0.058 20 150 3 6.0 4.0 PMLL5237B 8.2 500 +0.062 20 150 3 6.5 4.0 PMLL5238B 8.7 600 +0.065 20 150 3 6.5 3.5 PMLL5239B 9.1 600 +0.068 20 150 3 7.0 3.0 PMLL5240B 10 600 +0.075 20 90 3 8.0 3.0 PMLL5241B 11 600 +0.076 20 85 2 8.4 2.5 PMLL5242B 12 600 +0.077 20 85 1 9.1 2.5
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Philips Semiconductors Product specification Voltage regulator diodes PMLL5225B to PMLL5267B Notes 1. V Z is measured with device at thermal equilibrium while held in clips at 10 mm from body in still air at 25°C. 2. For types PMLL5225B to PMLL5242B the IZ current is 7.5 mA; for PMLL5243B and higher IZ =IZtest. SZ values valid between 25°C and 125°C. TYPE No. WORKING VOLTAGE V Z (V)(1) at IZtest DIFFERENTIAL RESISTANCE rdif(Ω ) at IZtest TEMP. COEFF. SZ (%/K) at IZ(2) TEST CURRENT IZtest (mA) DIODE CAP. C d (pF) at f = 1 MHz; at VR =0V REVERSE CURRENT at REVERSE VOLTAGE NON-REPETITIVE PEAK REVERSE CURRENT IZSM (A) at tp = 100µs; Tamb =2 5°CIR (µA) VR
1996 Apr 26 5
Philips Semiconductors Product specification Voltage regulator diodes PMLL5225B to PMLL5267B THERMAL CHARACTERISTICS Note 1. Device mounted on a printed circuit-board without metallization pad. SYMBOL PARAMETER CONDITIONS VALUE UNIT R th j-tp thermal resistance from junction to tie-point lead length 10 mm 300 K/W R th j-a thermal resistance from junction to ambient lead length max.; see Fig.2 and note 1 380 K/W
1996 Apr 26 6
Philips Semiconductors Product specification Voltage regulator diodes PMLL5225B to PMLL5267B GRAPHICAL DATA Fig.2 Thermal resistance from junction to ambient as a function of pulse duration. handbook, full pagewidth 10−1 11 0 1 0 2 103 104 105 MBG930 102 103 tp (ms) tp tp T Tδ = 0.02 0.01 ≤0.001 0.75 0.50 0.33 0.20 0.10 0.05 δ = 1R th j-a (K/W) Fig.3 Maximum permissible non-repetitive peak reverse power dissipation versus duration. (1) Tj=2 5°C (prior to surge). (2) Tj= 150°C (prior to surge). handbook, halfpage MBG801 103 1 duration (ms) PZSM (W) 102 10−1 (1) (2) Fig.4 Forward current as a function of forward voltage; typical values. Tj=2 5°C. handbook, halfpage 0.5 1.0 250 MBG803 125
0.75 V F (V)
(mA)
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Philips Semiconductors Product specification Voltage regulator diodes PMLL5225B to PMLL5267B PACKAGE OUTLINE DEFINITIONS LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification. Dimensions in mm. Fig.5 SOD80C. handbook, full pagewidth MBA390 - 2 1.60 1.45 3.7 3.3 0.3 0.3 O