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PML260SN NEXPERIA | Alldatasheet

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Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. use http://www.nexperia.com salesaddresses@nexperia.com (email) Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on the version, as shown below: reserved Should be replaced with: - © Nexperia B.V. (year). All rights reserved. If you have any questions related to the data sheet, please contact our nearest sales office via e -mail or telephone (details via salesaddresses@nexperia.com). Thank you for your cooperation and understanding, Kind regards, Team Nexperia

1.1 General description

surface-mounted plastic package using TrenchMOS technology.

1.2 Features

1.3 Applications

1.4 Quick reference data

Table 1. Pinning

PML260SN_2 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Table 2. Ordering information Table 3. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).

PML260SN_2 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Product data sheet Rev. 02 — 29 May 2006 3 of 12 Philips Semiconductors PML260SN N-channel TrenchMOS standard level FET Fig 1. Normalized total power dissipation as a function of mounting base temperature Fig 2. Normalized continuous drain current as a function of mounting base temperature Tmb =2 5°C; IDM is single pulse; VGS =1 0V Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage 03ne36 120 0 50 100 150 200 Tmb (°C) Pder (%) 03ne37 120 0 50 100 150 200 Tmb (°C) Ider (%) P der P tot P tot 25°C() ID ID2 5 °C() 003aab281 10-1 102 10-1 1 10 10 2 103 VDS (V) ID (A) DC 1 ms 100 µ s Limit RDSon = VDS / ID 10 ms 10 µ stp =

PML260SN_2 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Product data sheet Rev. 02 — 29 May 2006 6 of 12 Philips Semiconductors PML260SN N-channel TrenchMOS standard level FET Tj=2 5°CT j=2 5°C Fig 5. Output characteristics: drain current as a function of drain-source voltage; typical values Fig 6. Drain-source on-state resistance as a function of drain current; typical values Tj=2 5°C and 150°C; VDS >ID × R DSon Fig 7. Transfer characteristics: drain current as a function of gate-source voltage; typical values Fig 8. Normalized drain-source on-state resistance factor as a function of junction temperature 003aab063 012345 VDS (V) ID (A) VGS (V) =10 5 3.8 3.6 3.4 3.2 003aab064 200 400 600 800 048 1 2 I D (A) R DSon (mΩ ) 3.83.6 4 VGS (V) = 003aab065 012345 VGS (V) ID (A) Tj = 150 °C 25 °C 03al52 -60 0 60 120 180 a Tj (°C) a R DSon R DSon 25 °C()

PML260SN_2 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Product data sheet Rev. 02 — 29 May 2006 7 of 12 Philips Semiconductors PML260SN N-channel TrenchMOS standard level FET ID = 1 mA; VDS =V GS Tj=2 5°C; VDS =5V Fig 9. Gate-source threshold voltage as a function of junction temperature Fig 10. Sub-threshold drain current as a function of gate-source voltage ID = 2.6 A; VDS = 100 V Fig 11. Gate-source voltage as a function of gate charge; typical values Fig 12. Gate charge waveform deﬁnitions Tj (°C) −60 180 12006 0 03aa32 VGS(th) (V) max typ min 03aa35 VGS (V) 06 42 10−4 10−5 10−2 10−3 10−1 ID (A) 10−6 min typ max 003aab066 048 1 2 1 6 Q G (nC) VGS (V) 003aaa508 VGS VGS(th) Q GS1 Q GS2 Q GD VDS Q G(tot) ID Q GS VGS(pl)

PML260SN_2 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Product data sheet Rev. 02 — 29 May 2006 8 of 12 Philips Semiconductors PML260SN N-channel TrenchMOS standard level FET Tj=2 5°C and 150°C; VGS =0V V GS = 0 V; f = 1 MHz Fig 13. Source current as a function of source-drain voltage; typical values Fig 14. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values 003aab080 0.2 0.4 0.6 0.8 1 V SD (V) IS (A) Tj = 25 °C150 °C 003aab067 102 103 10-1 1 10 10 2 VDS (V) C (pF) C iss C rss C oss

PML260SN_2 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Product data sheet Rev. 02 — 29 May 2006 9 of 12 Philips Semiconductors PML260SN N-channel TrenchMOS standard level FET 7. Package outline Fig 15. Package outline SOT873-1 (HVSON8) REFERENCESOUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE IEC JEDEC JEITA SOT873-1 SOT873-1 05-06-16 05-06-21 DIMENSIONS (mm are the original dimensions) HVSON8: plastic thermal enhanced very thin small outline package; no leads; 8 terminals; body 3.3 · 3.3 · 0.85 mm - - -- - -- - - UNIT A max. A 1 bc e e 1 L1 ywv mm 1 0.05 0.00 0.35 0.25 0.2 3.4 3.2 0.651.68 1.58 0.05 0.1 0.10.11.95 0.55 0.45 0.52 0.42 DE 3.4 3.2 D h Eh 2.3 2.2 0 1 2 mm scale detail X A A1 c b e AC Bv M Cw M Eh D h terminal 1 index area Eterminal 1 index area D X B A C yCy1

The format of this data sheet has been redesigned to comply with the new presentation and information standard of Philips Semiconductors. PML260SN_1 20051222 Preliminary data sheet - -

PML260SN_2 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Product data sheet Rev. 02 — 29 May 2006 11 of 12 Philips Semiconductors PML260SN N-channel TrenchMOS standard level FET 9. Legal information

9.1 Data sheet status

[1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Deﬁnitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.semiconductors.philips.com.

9.2 Deﬁnitions

Draft —The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modiﬁcations or additions. Philips Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet —A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local Philips Semiconductors sales ofﬁce. In case of any inconsistency or conﬂict with the short data sheet, the full data sheet shall prevail.

9.3 Disclaimers

General — Information in this document is believed to be accurate and reliable. However, Philips Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes —Philips Semiconductors reserves the right to make changes to information published in this document, including without limitation speciﬁcations and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use —Philips Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of a Philips Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. Philips Semiconductors accepts no liability for inclusion and/or use of Philips Semiconductors products in such equipment or applications and therefore such inclusion and/or use is for the customer’s own risk. Applications —Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors makes no representation or warranty that such applications will be suitable for the speciﬁed use without further testing or modiﬁcation. Limiting values —Stress above one or more limiting values (as deﬁned in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale —Philips Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.semiconductors.philips.com/proﬁle/terms , including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by Philips Semiconductors. In case of any inconsistency or conﬂict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license —Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights.

9.4 Trademarks

Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. TrenchMOS — is a trademark of Koninklijke Philips Electronics N.V. 10. Contact information For additional information, please visit: http://www.semiconductors.philips.com For sales ofﬁce addresses, send an email to: sales.addresses@www.semiconductors.philips.com Document status[1][2] Product status[3] Deﬁnition Objective [short] data sheet Development This document contains data from the objective speciﬁcation for product development. Preliminary [short] data sheet Qualiﬁcation This document contains data from the preliminary speciﬁcation. Product [short] data sheet Production This document contains the product speciﬁcation.

Philips Semiconductors PML260SN N-channel TrenchMOS standard level FET © Koninklijke Philips Electronics N.V. 2006. All rights reserved. For more information, please visit: http://www.semiconductors.philips.com. Date of release: 29 May 2006 Document identifier: PML260SN_2 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. 11. Contents

Product Information

PML260SN specifications and overview.

Summary

N-channel TrenchMOS standard level FET Rev. 02 - 29 May 2006

Description

N-channel TrenchMOS standard level FET Rev. 02 - 29 May 2006

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