PMBZ5226B PHILIPS | Alldatasheet

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Technical content

Product specification Supersedes data of 1996 Apr 26

1999 May 17

book, halfpage M3D088

1999 May 17 2

Philips Semiconductors Product specification Voltage regulator diodes PMBZ5226B to PMBZ5257B

FEATURES

  • Total power dissipation: max. 250 mW
  • Tolerance series:±5%
  • Working voltage range: nom. 3.3 to 75 V
  • Non-repetitive peak reverse power dissipation: max. 40 W.

APPLICATIONS

  • General regulation functions.

DESCRIPTION

Low-power voltage regulator diodes in small SOT23 plastic SMD packages. The series consists of 32 types with nominal working voltages from 3.3 to 75 V. PINNING PIN DESCRIPTION 1 anode 2 not connected 3 cathode Fig.1 Simplified outline (SOT23) and symbol. handbook, halfpage MAM243 n.c. 1 Top view MARKING Note 1. ∗ = p : Made in Hong Kong. ∗ = t : Made in Malaysia. TYPE NUMBER MARKING CODE (1) TYPE NUMBER MARKING CODE (1) TYPE NUMBER MARKING CODE (1) TYPE NUMBER MARKING CODE PMBZ5226B ∗8A PMBZ5234B ∗8J PMBZ5242B ∗8S PMBZ5250B 81A PMBZ5227B ∗8B PMBZ5235B ∗8K PMBZ5243B ∗8T PMBZ5251B 81B PMBZ5228B ∗8C PMBZ5236B ∗8L PMBZ5244B ∗8U PMBZ5252B 81C PMBZ5229B ∗8D PMBZ5237B ∗8M PMBZ5245B ∗8V PMBZ5253B 81D PMBZ5230B ∗8E PMBZ5238B ∗8N PMBZ5246B ∗8W PMBZ5254B 81E PMBZ5231B ∗8F PMBZ5239B ∗8P PMBZ5247B ∗8X PMBZ5255B 81F PMBZ5232B ∗8G PMBZ5240B ∗8Q PMBZ5248B ∗8Y PMBZ5256B 81G PMBZ5233B ∗8H PMBZ5241B ∗8R PMBZ5249B ∗8Z PMBZ5257B 81H

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Philips Semiconductors Product specification Voltage regulator diodes PMBZ5226B to PMBZ5257B LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). Notes 1. Device mounted on a ceramic substrate of 8× 10 × 0.7 mm. 2. Device mounted on an FR4 printed circuit-board.

ELECTRICAL CHARACTERISTICS

Tj=2 5°C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT IF continuous forward current − 200 mA IZSM non-repetitive peak reverse current tp = 100µs; square wave; Tj=2 5°C prior to surge see Table “Per type” Ptot total power dissipation T amb =2 5°C; note 1 − 300 mW Tamb =2 5°C; note 2 − 250 mW PZSM non-repetitive peak reverse power dissipation tp = 100µs; square wave; Tj=2 5°C prior to surge; see Fig.2 − 40 W Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C SYMBOL PARAMETER CONDITIONS MAX. UNIT VF forward voltage I F = 200 mA; see Fig.3 1.1 V

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Philips Semiconductors Product specification Voltage regulator diodes PMBZ5226B to PMBZ5257BPer type Tj=2 5°C unless otherwise specified. TYPE No. WORKING VOLTAGE VZ (V)(1) at IZtest DIFFERENTIAL RESISTANCE rdif(Ω ) at IZ = 0.25 mA TEMP. COEFF. SZ (%/K) at IZ(2) TEST CURRENT IZtest (mA) DIODE CAP. C d (pF) at f = 1 MHz; at VR =0V REVERSE CURRENT at REVERSE VOLTAGE NON-REPETITIVE PEAK REVERSE CURRENT IZSM (A) at tp = 100µs; Tamb =2 5°CIR (µA) VR PMBZ5226B 3.3 1600 −0.064 20 450 25 1.0 6.0 PMBZ5227B 3.6 1700 −0.065 20 450 15 1.0 6.0 PMBZ5228B 3.9 1900 −0.063 20 450 10 1.0 6.0 PMBZ5229B 4.3 2000 −0.058 20 450 5 1.0 6.0 PMBZ5230B 4.7 2000 −0.047 20 450 5 1.0 6.0 PMBZ5231B 5.1 2000 −0.013 20 300 5 2.0 6.0 PMBZ5232B 5.6 1600 +0.023 20 300 5 3.0 6.0 PMBZ5233B 6.0 1600 +0.023 20 300 5 3.5 6.0 PMBZ5234B 6.2 1000 +0.039 20 200 5 4.0 6.0 PMBZ5235B 6.8 750 +0.040 20 200 3 5.0 6.0 PMBZ5236B 7.5 500 +0.047 20 150 3 6.0 4.0 PMBZ5237B 8.2 500 +0.052 20 150 3 6.5 4.0 PMBZ5238B 8.7 600 +0.053 20 150 3 6.5 3.5 PMBZ5239B 9.1 600 +0.055 20 150 3 7.0 3.0 PMBZ5240B 10 600 +0.055 20 90 3 8.0 3.0 PMBZ5241B 11 600 +0.058 20 85 2 8.4 2.5 PMBZ5242B 12 600 +0.062 20 85 1 9.1 2.5 PMBZ5244B 14 600 +0.067 9.0 80 0.1 10 2.0 PMBZ5245B 15 600 +0.073 8.5 75 0.1 11 2.0 PMBZ5246B 16 600 +0.073 7.8 75 0.1 12 1.5 PMBZ5247B 17 600 +0.073 7.4 75 0.1 13 1.5 PMBZ5248B 18 600 +0.078 7.0 70 0.1 14 1.5 PMBZ5249B 19 600 +0.078 6.6 70 0.1 14 1.5 PMBZ5250B 20 600 +0.080 6.2 60 0.1 15 1.5 PMBZ5251B 22 600 +0.080 5.6 60 0.1 17 1.25

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Philips Semiconductors Product specification Voltage regulator diodes PMBZ5226B to PMBZ5257B Notes 1. V Z is measured with device at thermal equilibrium while mounted on a ceramic substrate of 8× 10 × 0.7 mm. 2. For types PMBZ5226B to PMBZ5242B the IZ current is 7.5 mA; for PMBZ5243B and higher IZ =IZtest. SZ values valid between 25°C and 125°C. PMBZ5252B 24 600 +0.081 5.2 55 0.1 18 1.25 PMBZ5253B 25 600 +0.082 5.0 55 0.1 19 1.25 PMBZ5254B 27 600 +0.085 4.6 50 0.1 21 1.0 PMBZ5255B 28 600 +0.085 4.5 50 0.1 21 1.0 PMBZ5256B 30 600 +0.085 4.2 50 0.1 23 1.0 PMBZ5257B 33 700 +0.085 3.8 45 0.1 25 0.9 TYPE No. WORKING VOLTAGE V Z (V)(1) at IZtest DIFFERENTIAL RESISTANCE rdif(Ω ) at IZ = 0.25 mA TEMP. COEFF. SZ (%/K) at IZ(2) TEST CURRENT IZtest (mA) DIODE CAP. C d (pF) at f = 1 MHz; at VR =0V REVERSE CURRENT at REVERSE VOLTAGE NON-REPETITIVE PEAK REVERSE CURRENT IZSM (A) at tp = 100µs; Tamb =2 5°CIR (µA) VR

1999 May 17 6

Philips Semiconductors Product specification Voltage regulator diodes PMBZ5226B to PMBZ5257B THERMAL CHARACTERISTICS Note 1. Device mounted on a printed-circuit board. SYMBOL PARAMETER CONDITIONS VALUE UNIT R th j-tp thermal resistance from junction to tie-point 330 K/W R th j-a thermal resistance from junction to ambient note 1 500 K/W GRAPHICAL DATA Fig.2 Maximum permissible non-repetitive peak reverse power dissipation versus duration. handbook, halfpage MBG801 103 1 duration (ms) PZSM (W) 102 10−1 (1) (2) (1) Tj=2 5°C (prior to surge). (2) Tj= 150°C (prior to surge). Fig.3 Forward current as a function of forward voltage; typical values. handbook, halfpage 0.6 1.0 300 100 200 MBG781

0.8 VF (V)

(mA)

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Philips Semiconductors Product specification Voltage regulator diodes PMBZ5226B to PMBZ5257B PACKAGE OUTLINE UNIT A 1 max. bp cD E e1 H E Lp Qw v REFERENCESOUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE 97-02-28 IEC JEDEC EIAJ mm 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 0.95 e 1.9 2.5 2.1 0.55 0.45 0.10.2 DIMENSIONS (mm are the original dimensions) 0.45 0.15 SOT23 bp D e A Lp Q detail X H E E w M v M A B AB 0 1 2 mm scale A 1.1 0.9 c X Plastic surface mounted package; 3 leads SOT23

1999 May 17 8

Philips Semiconductors Product specification Voltage regulator diodes PMBZ5226B to PMBZ5257B DEFINITIONS LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

1999 May 17 9

Philips Semiconductors Product specification Voltage regulator diodes PMBZ5226B to PMBZ5257B NOTES

1999 May 17 10

Philips Semiconductors Product specification Voltage regulator diodes PMBZ5226B to PMBZ5257B NOTES

1999 May 17 11

Philips Semiconductors Product specification Voltage regulator diodes PMBZ5226B to PMBZ5257B NOTES

© Philips Electronics N.V. SCA All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Internet: http://www.semiconductors.philips.com 1999 64 Philips Semiconductors – a worldwide company Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB, Tel. +31 40 27 82785, Fax. +31 40 27 88399 New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND, Tel. +64 9 849 4160, Fax. +64 9 849 7811 Norway: Box 1, Manglerud 0612, OSLO, Tel. +47 22 74 8000, Fax. +47 22 74 8341 Pakistan: see Singapore Philippines: Philips Semiconductors Philippines Inc., 106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI, Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474 Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA, Tel. +48 22 612 2831, Fax. +48 22 612 2327 Portugal: see Spain Romania: see Italy Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW, Tel. +7 095 755 6918, Fax. +7 095 755 6919 Singapore: Lorong 1, Toa Payoh, SINGAPORE 319762, Tel. +65 350 2538, Fax. +65 251 6500 Slovakia: see Austria Slovenia: see Italy South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale, 2092 JOHANNESBURG, P.O. Box 58088 Newville 2114, Tel. +27 11 471 5401, Fax. +27 11 471 5398 South America: Al. Vicente Pinzon, 173, 6th floor, 04547-130 SÃO PAULO, SP, Brazil, Tel. +55 11 821 2333, Fax. +55 11 821 2382 Spain: Balmes 22, 08007 BARCELONA, Tel. +34 93 301 6312, Fax. +34 93 301 4107 Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM, Tel. +46 8 5985 2000, Fax. +46 8 5985 2745 Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH, Tel. +41 1 488 2741 Fax. +41 1 488 3263 Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1, TAIPEI, Taiwan Tel. +886 2 2134 2886, Fax. +886 2 2134 2874 Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd., 209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260, Tel. +66 2 745 4090, Fax. +66 2 398 0793 ISTANBUL, Tel. +90 216 522 1500, Fax. +90 216 522 1813 Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7, 252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461 United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes, MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421 United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409, Tel. +1 800 234 7381, Fax. +1 800 943 0087 Uruguay: see South America Vietnam: see Singapore Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD, Tel. +381 11 62 5344, Fax.+381 11 63 5777 For all other countries apply to: Philips Semiconductors, International Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria:Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 1 60 101 1248, Fax. +43 1 60 101 1210 Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6, 220050 MINSK, Tel. +375 172 20 0733, Fax. +375 172 20 0773 Belgium: see The Netherlands Brazil:see South America Bulgaria:Philips Bulgaria Ltd., Energoproject, 15th floor, 51 James Bourchier Blvd., 1407 SOFIA, Tel. +359 2 68 9211, Fax. +359 2 68 9102 Canada: PHILIPS SEMICONDUCTORS/COMPONENTS, Tel. +1 800 234 7381, Fax. +1 800 943 0087 China/Hong Kong: 501 Hong Kong Industrial Technology Centre,

72 Tat Chee Avenue, Kowloon Tong, HONG KONG,

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