PMBTH10

PMBTH10 PHILIPS | Alldatasheet

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Technical content

Product specification File under Discrete Semiconductors, SC14 September 1995 DISCRETE SEMICONDUCTORS PMBTH10 NPN 1 GHz general purpose switching transistor

Philips Semiconductors Product specification NPN 1 GHz general purpose switching transistor PMBTH10

FEATURES

• Low cost
• High power gain.

DESCRIPTION

The PMBTH10 is a general purpose silicon npn transistor, encapsulated in a SOT23 plastic envelope. Its pnp complement is the PMBTH81. PINNING PIN DESCRIPTION Code: V30 1 base 2 emitter 3 collector Fig.1 SOT23. fpage MSB003Top view QUICK REFERENCE DATA LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). Note 1. Ts is the temperature at the soldering point of the collector tab. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 30 V VCEO collector-emitter voltage open base − 25 V VEBO emitter-base voltage open collector − 3V Ptot total power dissipation T s =4 5°C (note 1) − 400 mW hFE DC current gain V CE = 10 V; IC = 4 mA 60 − C re collector-emitter feedback capacitance VCB = 10 V; IE = 0; f = 1 MHz − 0.7 pF C rb collector-base feedback capacitance VCB = 10 V; IE = 0; f = 1 MHz 0.35 0.65 pF fT transition frequency V CE = 10 V; IC = 4 mA; f = 100 MHz; Tamb =2 5°C 650 − MHz rbC c collector-base time constant V CE = 10 V; IC = 4 mA; f = 100 MHz; Tamb =2 5°C − 9p s SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 30 V VCEO collector-emitter voltage open base − 25 V VEBO emitter-base voltage open collector − 3V IC DC collector current − 40 mA Ptot total power dissipation T s =4 5°C (note 1) − 400 mW Tstg storage temperature −65 150 °C Tj junction temperature − 150 °C

Philips Semiconductors Product specification NPN 1 GHz general purpose switching transistor PMBTH10 THERMAL RESISTANCE Note 1. Ts is the temperature at the soldering point of the collector tab. CHARACTERISTICS Tj=2 5°C. SYMBOL PARAMETER THERMAL RESISTANCE R th j-s from junction to soldering point (note 1) 260 K/W SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V(BR)CBO collector-base breakdown voltage open emitter; IC = 100µA; IE =0 3 0 − V V(BR)CEO collector-emitter breakdown voltage open base; IC = 1 mA; IB =0 2 5 − V V(BR)EBO emitter-base breakdown voltage open collector; IE =1 0µA; IC =0 3 − V VCE sat collector-emitter saturation voltage IC = 4 mA; IB = 0.4 mA − 0.5 V VBE on base-emitter ON voltage V CE = 10 V; IC = 4 mA − 0.95 V ICBO collector-base cut-off current V CB = 25 V; IE =0 − 100 nA IEBO emitter-base cut-off current V CB = 25 V; IC =0 − 100 nA hFE DC current gain V CE = 10 V; IC = 4 mA 60 − C re collector-emitter feedback capacitance VCB = 10 V; IE =ie =0 ; f = 1 MHz − 0.7 pF C rb collector-base feedback capacitance VCB = 10 V; IC =ic =0 ; f = 1 MHz 0.35 0.65 pF fT transition frequency V CE = 10 V; IC = 4 mA; f = 100 MHz; Tamb =2 5°C 650 − MHz rbC c collector-base time constant V CB = 10 V; IC = 4 mA; f = 100 MHz; Tamb =2 5°C − 9p s

Philips Semiconductors Product specification NPN 1 GHz general purpose switching transistor PMBTH10 Fig.2 Common base input admittance (Y11) as a function of frequency. VCB = 10 V; IC = 4 mA. handbook, halfpage 100 Y11 (mS) f (MHz) MRA168 102 g11 −b11 103 Fig.3 Common base input admittance (Y11). VCB = 10 V; IC = 4 mA. handbook, halfpage 0 100 −10 −60 −50 −40 −30 −20 20 40 60 80 g11 (mS) b11 (mS) MRA170

1000 MHz

Fig.4 Common base forward transfer admittance (Y21) as a function of frequency. VCB = 10 V; IC = 4 mA. handbook, halfpage −30 −10 Y21 (mS) f (MHz) MRA169 102 103 b21 −g21 Fig.5 Common base forward transfer admittance (Y21). VCB = 10 V; IC = 4 mA. handbook, halfpage −70 30 −50 −30 −10 10 g21 (mS) b21 (mS) MRA171

Philips Semiconductors Product specification NPN 1 GHz general purpose switching transistor PMBTH10 Fig.6 Common base reverse transfer admittance (Y12) as a function of frequency. VCB = 10 V; IC = 4 mA. handbook, halfpage Y12 (mS) f (MHz) MRA164 102 −b12 g12 103 Fig.7 Common base reverse transfer admittance (Y12). VCB = 10 V; IC = 4 mA. handbook, halfpage −22 −1.2 −0.4 0.4 1.2 g12 (mS) b12 (mS) MRA166 Fig.8 Common base reverse admittance (Y22)a s a function of frequency. VCB = 10 V; IC = 4 mA. handbook, halfpage Y22 (mS) f (MHz) MRA165 102 103 b22 g22 Fig.9 Common base reverse admittance (Y22). VCB = 10 V; IC = 4 mA. handbook, halfpage 01 0 24 6 8 g22 (mS) b22 (mS) MRA167

100 MHz

700 MHz

400 MHz

200 MHz

Philips Semiconductors Product specification NPN 1 GHz general purpose switching transistor PMBTH10 PACKAGE OUTLINE UNIT A 1 max. bp cD E e1 H E Lp Qw v REFERENCESOUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE 97-02-28 IEC JEDEC EIAJ mm 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 0.95 e 1.9 2.5 2.1 0.55 0.45 0.10.2 DIMENSIONS (mm are the original dimensions) 0.45 0.15 SOT23 bp D e A Lp Q detail X H E E w M v M A B AB 0 1 2 mm scale A 1.1 0.9 c X Plastic surface mounted package; 3 leads SOT23

Philips Semiconductors Product specification NPN 1 GHz general purpose switching transistor PMBTH10 DEFINITIONS LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.