PMBFJ111

PMBFJ111 PHILIPS | Alldatasheet

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Technical content

Product specification File under Discrete Semiconductors, SC07 April 1995 DISCRETE SEMICONDUCTORS PMBFJ111; PMBFJ112; PMBFJ113 N-channel junction FETs

Philips Semiconductors Product specification N-channel junction FETs PMBFJ111; PMBFJ112; PMBFJ113

FEATURES

• High-speed switching
• Interchangeability of drain and source connections
• Low R DSon at zero gate voltage ( <30 Ω for PMBFJ111).

DESCRIPTION

Symmetrical N-channel junction FETs in a surface mount SOT23 envelope. Intended for use in applications such as analog switches, choppers, commutators, multiplexers and thin and thick film hybrids. PINNING - SOT23 Note 1. Drain and source are interchangeable. PIN DESCRIPTION 1 drain 2 source 3 gate LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS drain-source voltage −± 40 V VGSO gate-source voltage −− 40 V VGDO drain-drain voltage −− 40 V IG forward gate current (DC) − 50 mA Ptot total power dissipation Tamb =2 5°C; note 1 − 300 mW Tstg storage temperature −65 150 °C Tj operating junction temperature − 150 °C Fig.1 Simplified outline and symbol. handbook, halfpage g d s Top view MAM385

Philips Semiconductors Product specification N-channel junction FETs PMBFJ111; PMBFJ112; PMBFJ113 THERMAL CHARACTERISTICS Tj=P(Rth j-t+ R th t−s + R th s-a)+ Tamb Notes 1. Mounted on a ceramic substrate, 8 mm× 10 mm × 0.7 mm. 2. Mounted on printed circuit board. STATIC CHARACTERISTICS Tj=2 5°C. SYMBOL PARAMETER MAX. UNIT R th j-a from junction to ambient (note 1) 430 K/W R th j-a from junction to ambient (note 2) 500 K/W SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT −IGSS reverse gate current −VGS = 15 V; VDS =0 − 1n A IDSS drain current V GS = 0; VDS = 15 V PMBFJ111 20 − mA PMBFJ112 5 − PMBFJ113 2 − −V(BR)GSS gate-source breakdown voltage−IG =1 µA; VDS =0 4 0 − V −VGS(off) gate-source cut-off voltage ID =1 µA; VDS =5 V PMBFJ111 3 10 V PMBFJ112 1 5 PMBFJ113 0.5 3 R DS(on) drain-source on-resistance V GS = 0 V; VDS = 0.1 V PMBFJ111 − 30 Ω PMBFJ112 − 50 PMBFJ113 − 100

Philips Semiconductors Product specification N-channel junction FETs PMBFJ111; PMBFJ112; PMBFJ113 DYNAMIC CHARACTERISTICS Tj =2 5°C. Notes 1. Test conditions for switching times are as follows: VDD = 10 V, VGS = 0 to−VGS(off)(all types); −VGS(off)= 12 V, RL = 750Ω (PMBFJ111); −VGS(off)= 7 V, RL = 1550Ω (PMBFJ112); −VGS(off)= 5 V, RL = 3150Ω (PMBFJ113). SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT C iss input capacitance V DS = 0 −VGS = 10 V f = 1 MHz 6 − pF VDS = 0 −VGS =0 f = 1 MHz T amb =2 5°C 22 28 pF C rss feedback capacitance V DS = 0 −VGS = 10 V f = 1 MHz 3 − pF Switching times(see Fig.2) tr rise time note 1 6 − ns ton turn-on time note 1 13 − ns tf fall time note 1 15 − ns toff turn-off time note 1 35 − ns Fig.2 Switching circuit. ok, halfpage MBK289 50 Ω R L DUT 10 µF 1 µF VDD 10 nF 50 Ω SAMPLING SCOPE 50 Ω Fig.3 Input and output waveforms. MBK294 −VGS off toff tfts VGS = 0 V Vi Vo 10% 90% 90% 10% ton trtd

Philips Semiconductors Product specification N-channel junction FETs PMBFJ111; PMBFJ112; PMBFJ113 PACKAGE OUTLINE UNIT A 1 max. bp cD E e1 H E Lp Qw v REFERENCESOUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE 97-02-28 IEC JEDEC EIAJ mm 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 0.95 e 1.9 2.5 2.1 0.55 0.45 0.10.2 DIMENSIONS (mm are the original dimensions) 0.45 0.15 SOT23 bp D e A Lp Q detail X H E E w M v M A B AB 0 1 2 mm scale A 1.1 0.9 c X Plastic surface mounted package; 3 leads SOT23

Philips Semiconductors Product specification N-channel junction FETs PMBFJ111; PMBFJ112; PMBFJ113 DEFINITIONS LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Short-form specification The data in this specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.