PMBF4391

PMBF4391 PHILIPS | Alldatasheet

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Product specification File under Discrete Semiconductors, SC07 April 1995 DISCRETE SEMICONDUCTORS PMBF4391; PMBF4392; PMBF4393 N-channel FETs

Philips Semiconductors Product specification N-channel FETs PMBF4391; PMBF4392; PMBF4393

DESCRIPTION

Symmetrical silicon n-channel depletion type junction field-effect transistors on a plastic microminiature envelope intended for application in thick and thin-film circuits. The transistors are intended for low-power chopper or switching applications in industry. PINNING Note 1. Drain and source are interchangeable. Marking code 1 = drain 2 = source 3 = gate PMBF4391 = p6J PMBF4392 = p6K PMBF4393 = p6G Fig.1 Simplified outline and symbol, SOT23. handbook, halfpage g d s Top view MAM385 QUICK REFERENCE DATA PMBF4391 PMBF4392 PMBF4393 Drain-source voltage ± VDS max. 40 40 40 V Drain current VDS = 20 V; VGS =0 I DSS > 50 25 5 mA Gate-source cut-off voltage VDS = 20 V; ID = 1 nA −V(P)GS > 4 2 0.5 V < 10 5 3 V Drain-source resistance (on) at f = 1 kHz ID = 0; VGS =0 R ds on < 30 60 100 Ω Feedback capacitance at f = 1 MHz −VGS = 12 V; VDS =0 C rs < 3.5 3.5 3.5 pF Turn-off time VDD = 10 V; VGS =0 ID = 12 mA;−VGSM = 12 V t off < 20 −− ns ID = 6 mA;−VGSM = 7 V t off <− 35 − ns ID = 3 mA;−VGSM = 5 V t off <− − 50 ns

Philips Semiconductors Product specification N-channel FETs PMBF4391; PMBF4392; PMBF4393 RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) THERMAL RESISTANCE CHARACTERISTICS Tj=2 5°C unless otherwise specified Drain-source voltage ± VDS max. 40 V Drain-gate voltage V DGO max. 40 V Gate-source voltage −VGSO max. 40 V Gate current (DC) I G max. 50 mA Total power dissipation up to Tamb =4 0°C (1) Ptot max. 250 mW Storage temperature range T stg −65 to+ 150 °C Junction temperature T j max. 150 °C From junction to ambient(1) R th j-a = 430 K/W Gate-source voltage IG = 1 mA; VDS = 0 V GSon < 1V Gate-source cut-off current VDS = 0 V;−VGS = 20 V −IGSS < 0.1 nA VDS = 0 V;−VGS = 20 V; Tamb = 150°C −IGSS < 0.2 µA PMBF4391 PMBF4392 PMBF4393 Drain current VDS = 20 V; VGS =0 I DSS 150 mA mA Gate-source breakdown voltage G =1 µA; VDS =0 −V(BR)GSS > 40 40 40 V Gate-source cut-off voltage ID = 1 nA; VDS = 20 V −V(P)GS 0.5 V V Drain-source voltage (on) ID = 12 mA; VGS =0 V DSon < 0.4 −− V ID = 6 mA; VGS =0 V DSon < 0.4 − V ID = 3 mA; VGS =0 V DSon <− − 0.4 V Drain-source resistance (on) ID = 0; VGS = 0; f = 1 kHz; Tamb =2 5°Cr ds on < 30 − 100 Ω Drain cut-off current −VGS = 12 V VDS = 20 V IDSX < 0.1 −− nA −VGS =7 V I DSX <− 0.1 − nA −VGS =5 V I DSX <− − 0.1 nA −VGS = 12 V VDS = 20 V; Tamb = 150°C IDSX < 0.2 −− µ A −VGS =7 V I DSX <− 0.2 −µ A −VGS =5 V I DSX <− − 0.2 µA

Philips Semiconductors Product specification N-channel FETs PMBF4391; PMBF4392; PMBF4393 Note 1. Mounted on a ceramic substrate of 8 mm× 10 mm × 0,7 mm. y-parameters (common source) VDS = 20 V; VGS = 0; f = 1 MHz; Tamb =2 5°C PMBF4391 PMBF4392 PMBF4393 Input capacitance C is < 14 14 14 pF Feedback capacitance −VGS = 12 V ; V DS =0 C rs < 3.5 −− pF −VGS =7 V ;V DS =0 C rs <− 3.5 − pF −VGS =5 V ;V DS =0 C rs <− − 3.5 pF Switching times VDD = 10 V ; V DS =0 Conditions ID and −VGSoff ID =1 2 6 3 m A −VGS off =1 2 7 5 V R L = 750 1550 3150 Ω Rise time t r < 55 5 n s Turn on time t on < 15 15 15 ns Fall time t f < 15 20 30 ns Turn off time t off < 20 35 50 ns Fig.2 Switching times waveforms. handbook, full pagewidth MBK288 −VGS off toff tf VGS = 0 V Vi Vo 10% 90% 90% 10% ton tr

Philips Semiconductors Product specification N-channel FETs PMBF4391; PMBF4392; PMBF4393 Fig.3 Test circuit. handbook, halfpage MBK289 50 Ω R L DUT 10 µF 1 µF VDD 10 nF 50 Ω SAMPLING SCOPE 50 Ω Pulse generator: tr < 0.5 ns tf < 0.5 ns tp = 100 µs δ = 0.01 Oscilloscope: R i =5 0 Ω Fig.4 Power derating curve. handbook, halfpage Tamb (°C) Ptot (mW) 300 200 100 40 200 80 120 160 MDA245

Philips Semiconductors Product specification N-channel FETs PMBF4391; PMBF4392; PMBF4393 PACKAGE OUTLINE UNIT A 1 max. bp cD E e1 H E Lp Qw v REFERENCESOUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE 97-02-28 IEC JEDEC EIAJ mm 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 0.95 e 1.9 2.5 2.1 0.55 0.45 0.10.2 DIMENSIONS (mm are the original dimensions) 0.45 0.15 SOT23 bp D e A Lp Q detail X H E E w M v M A B AB 0 1 2 mm scale A 1.1 0.9 c X Plastic surface mounted package; 3 leads SOT23

Philips Semiconductors Product specification N-channel FETs PMBF4391; PMBF4392; PMBF4393 DEFINITIONS LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Short-form specification The data in this specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.