PMBD2837 PHILIPS | Alldatasheet

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Technical content

Product specification Supersedes data of April 1996

1996 Sep 18

PMBD2837; PMBD2838 High-speed double diodes book, halfpage M3D088

1996 Sep 18 2

Philips Semiconductors Product specification High-speed double diodes PMBD2837; PMBD2838

FEATURES

  • Small plastic SMD package
  • High switching speed: max. 4 ns
  • Continuous reverse voltage: max. 30 V and 50 V respectively
  • Repetitive peak reverse voltage: max. 35 V and 75 V respectively
  • Repetitive peak forward current: max. 450 mA.

APPLICATIONS

  • High-speed switching in e.g. surface mounted circuits.

DESCRIPTION

The PMD2837, PMD2838 consist of two high-speed switching diodes with common cathodes, fabricated in planar technology, and encapsulated in small plastic SMD SOT23 packages. MARKING TYPE NUMBER MARKING CODE PMBD2837 pA5 PMBD2838 pA6 PINNING PIN DESCRIPTION 1 anode (a1) 2 anode (a2) 3 common cathode Fig.1 Simplified outline (SOT23) and symbol. handbook, 4 columns 21 Top view MAM108

1996 Sep 18 3

Philips Semiconductors Product specification High-speed double diodes PMBD2837; PMBD2838 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). Note 1. Device mounted on an FR4 printed-circuit board. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Per diode VRRM repetitive peak reverse voltage PMBD2837 − 35 V PMBD2838 − 75 V VR continuous reverse voltage PMBD2837 − 30 V PMBD2838 − 50 V IF continuous forward current single diode loaded; see Fig.2; note 1 − 215 mA double diode loaded; see Fig.2; note 1 − 125 mA IFRM repetitive peak forward current 450 mA IFSM non-repetitive peak forward current square wave; Tj=2 5°C prior to surge; see Fig.4 t=1 µs − 4A t=1m s − 1A t=1s − 0.5 A Ptot total power dissipation T amb =2 5°C; note 1 − 250 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C

1996 Sep 18 4

Philips Semiconductors Product specification High-speed double diodes PMBD2837; PMBD2838

ELECTRICAL CHARACTERISTICS

Tj=2 5°C; unless otherwise specified. THERMAL CHARACTERISTICS Note 1. Device mounted on an FR4 printed-circuit board. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Per diode VF forward voltage see Fig.3 IF =1m A − 715 mV IF =1 0m A − 855 mV IF =5 0m A − 1V IF = 150 mA − 1.25 V IR reverse current see Fig.5 PMBD2837 V R =3 0V − 100 nA VR =3 0V ; Tj= 150°C − 40 µA PMBD2838 V R =5 0V − 100 nA VR =5 0V ; Tj= 150°C − 50 µA C d diode capacitance f = 1 MHz; V R = 0; see Fig.6 − 2.5 pF trr reverse recovery time when switched from I F = 10 mA to IR = 10 mA; RL = 100Ω ; measured at IR = 1 mA; see Fig.7 − 4n s Vfr forward recovery voltage when switched from I F = 10 mA; tr = 20 ns; see Fig.8 − 1.75 V SYMBOL PARAMETER CONDITIONS VALUE UNIT R th j-tp thermal resistance from junction to tie-point 360 K/W R th j-a thermal resistance from junction to ambient note 1 500 K/W

1996 Sep 18 5

Philips Semiconductors Product specification High-speed double diodes PMBD2837; PMBD2838 GRAPHICAL DATA Device mounted on an FR4 printed-circuit board. Fig.2 Maximum permissible continuous forward current as a function of ambient temperature. 0 200 300 100 200 MBD033 100 IF (mA) T ( C)amb o single diode loaded double diode loaded (1) Tj= 150°C; typical values. (2) Tj=2 5°C; typical values. (3) Tj=2 5°C; maximum values. Fig.3 Forward current as a function of forward voltage. handbook, halfpage 300 IF (mA) 100 200 MBG382

1 VF (V)

(1) (3) (2) Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration. Based on square wave currents. Tj=2 5°C prior to surge. handbook, full pagewidth MBG704 10 tp (µs)1 IFSM (A) 102 10−1 104102 103

1996 Sep 18 6

Philips Semiconductors Product specification High-speed double diodes PMBD2837; PMBD2838 Fig.5 Reverse current as a function of junction temperature. handbook, halfpage105 104 2000 MBG375 100 IR (nA) 103 102 (1) (2) (3) Tj (oC) (1) VR = 50 V; maximum values. (2) VR = 50 V; typical values. (3) VR = 30 V; typical values. Fig.6 Diode capacitance as a function of reverse voltage; typical values. f = 1 MHz; Tj=2 5°C. handbook, halfpage 08 1 6 124 0.8 0.6 0.4 0.2 MBG446 VR (V) C d (pF)

1996 Sep 18 7

Philips Semiconductors Product specification High-speed double diodes PMBD2837; PMBD2838 Fig.7 Reverse recovery voltage test circuit and waveforms. (1) IR = 1 mA. handbook, full pagewidth trr (1) IF t output signal tr t tp 10% 90%V R input signal V = V I x RRF S R = 50S Ω IF D.U.T. R = 50i Ω SAMPLING OSCILLOSCOPE MGA881 Fig.8 Forward recovery voltage test circuit and waveforms. tr t tp 10% 90% I input signal R = 50S Ω I R = 50i Ω OSCILLOSCOPE Ω1 k Ω450 D.U.T. MGA882 V fr t output signal V

1996 Sep 18 8

Philips Semiconductors Product specification High-speed double diodes PMBD2837; PMBD2838 PACKAGE OUTLINE DEFINITIONS LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification. Fig.9 SOT23. Dimensions in mm. full pagewidth MBC846 max o max o max o 1.1 max 0.55 0.45 0.150 0.0900.1 max M0.1 AB0.48 0.38 TOP VIEW 1.4 1.2 2.5 max 3.0 2.8 M0.2 AA B 0.95 1.9