PMA-545G1-DF+

PMA-545G1-D MINI | Alldatasheet

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Technical content

A. Performance and quality attributes and conditions not expressly stated in this specification document are intended to be excluded and do not form a part of this specification document. B. Electrical specifications and performance data contained in this specification document are based on Mini-Circuit’s applicable established test performance criteria and measurement instructions. C. The parts covered by this specification document are subject to Mini-Circuits standard limited warranty and terms and conditions (collectively, “Standard Terms”); Purchasers of this part are entitled to the rights and benefits contained therein. For a full statement of the Standard Terms and the exclusive rights and remedies thereunder, please visit Mini-Circuits’ website at www.minicircuits.com/MCLStore/terms.jsp Mini-Circuits The Big Deal

• High Gain, 31.3 dB
• Low Noise Figure, 1.0 dB
• High IP3, 34-36 dBm Product Overview Mini-Circuits’ PMA-545G1-D+ is a E-PHEMT based Low Noise MMIC Amplifier die operating from 0.4 to 2.2 GHz with a unique combination of low noise high gain and high IP3 making this amplifier ideal for sensitive receiver applications. This design operates on a single +5V supply and is internally matched to 50 Ohms. Feature Advantages High Gain: 26-32 dB Incorporating multiple stages of amplification, the PMA-545G1-D+ provides high gain reducing cost and real estate. Ultra Low Noise: 1.0 dB at 0.9 GHz Excellent Noise Figure, measured in a 50 Ohm environment – without any external matching. When combined with high gain of this design, it suppresses second stage NF contribution. High IP3: +35 dBm IP3 at 0.9 GHz Combining Low Noise and High IP3 makes this MMIC amplifier ideal for Low Noise Receiver Front End (RFE) giving the user advantages at both ends of the dynamic range: sensitivity & two-tone IM dynamic range. Output Power: +23 dBm at 0.9 GHz The PMA-545G1-D+ maintains consistent output power capability over the full op- erating temperature range making it ideal to be used in remote applications such as LNB’s as the L Band driver stage. Internally Matched: 9-18 dB return loss No external matching elements required to achieve the advertized noise and output power over the full band. Max Input Power +25 dBm Ruggedized design operates up to input powers often seen at Receiver inputs. High Reliability Low, small signal operating current of 160 mA nominal maintains junction tempera- tures typically below 123°C at 85°C at bottom of die. Unpackaged Die Enables user to integrate the amplifier directly into hybrids Key Features 50Ω 0.4 to 2.2 GHz PMA-545G1-D+ Low Noise, High IP3 Monolithic Amplifier Die

A. Performance and quality attributes and conditions not expressly stated in this specification document are intended to be excluded and do not form a part of this specification document. B. Electrical specifications and performance data contained in this specification document are based on Mini-Circuit’s applicable established test performance criteria and measurement instructions. C. The parts covered by this specification document are subject to Mini-Circuits standard limited warranty and terms and conditions (collectively, “Standard Terms”); Purchasers of this part are entitled to the rights and benefits contained therein. For a full statement of the Standard Terms and the exclusive rights and remedies thereunder, please visit Mini-Circuits’ website at www.minicircuits.com/MCLStore/terms.jsp Mini-Circuits Product Features

• High Gain, 31.3 dB typ. at 0.9 GHz
• Ultra Low Noise Figure, 1.0 dB typ. at 0.9 GHz
• High IP3, 34.6 dBm typ. 0.9 GHz
• Output Power, up to +23dBm typ. at 0.9 GHz
• Single Positive Supply Voltage, 5V Typical Applications
• Cellular
• ISM
• GSM
• WCDMA
• LTE
• GPS General Description PMA-545G1-D+ is a high dynamic range, low noise, high IP3, high output power, monolithic amplifier die. Manufactured using E-PHEMT* technology enables it to work with a single positive supply voltage. Uncon- ditionally stable over the operating frequency. REV. OR M154018 PMA-545G1-D+ TH/RS/CP/AM 160407 RF-IN RF-OUT and DC BIAS 2BIAS 1 Bonding Pad Description (See Application Circuit, Fig. 1) RF-IN RF input pad (connected to RF-IN via C1) RF-OUT & DC RF output pad (connected to RF-OUT via blocking external cap C2, and Supply voltage Vs via RF Choke L2) BIAS 1 Connect to Vs BIAS 2 Connect to Vs via L1 GROUND Connected to ground *Enhancement mode Pseudomorphic High Electron Mobility Transistor. 50Ω 0.4 to 2.2 GHz PMA-545G1-D+ Low Noise, High IP3 Monolithic Amplifier Die +RoHS Compliant The +Suffix identifies RoHS Compliance. See our web site for RoHS Compliance methodologies and qualifications Ordering Information: Refer to Last Page Simplified Schematic and Pad description

Monolithic Low Noise E-PHEMT MMIC Amplifier Die Page 3 of 6 Notes A. Performance and quality attributes and conditions not expressly stated in this specification document are intended to be excluded and do not form a part of this specification document. B. Electrical specifications and performance data contained in this specification document are based on Mini-Circuit’s applicable established test performance criteria and measurement instructions. C. The parts covered by this specification document are subject to Mini-Circuits standard limited warranty and terms and conditions (collectively, “Standard Terms”); Purchasers of this part are entitled to the rights and benefits contained therein. For a full statement of the Standard Terms and the exclusive rights and remedies thereunder, please visit Mini-Circuits’ website at www.minicircuits.com/MCLStore/terms.jsp Mini-Circuits Electrical Specifications1 at 25°C, Vd=5V, Zo=50Ω, (refer to characterization circuit) Parameter Condition (GHz) Min. Typ. Max. Units Frequency Range 0.4 2.2 GHz DC Voltage (Vd) 4.8 5.0 5.2 V DC Current 117 158 186 mA Noise Figure 0.4 — 1.2 — dB 0.9 — 1.0 — 1.2 — 1.0 — 1.6 — 1.1 — 2.2 — 1.3 — Gain 0.4 — 32.0 — dB 0.9 — 31.3 — 1.2 — 31.1 — 1.6 — 29.9 — 2.2 — 25.8 — Input Return Loss 0.4 15.8 dB 0.9 9.4 1.2 10.0 1.6 12.9 2.2 18.1 Output Return Loss 0.4 16.9 dB 0.9 17.3 1.2 17.0 1.6 16.3 2.2 14.9 Output IP3 0.4 34.5 dBm 0.9 34.6 1.2 36.1 1.6 36.6 2.2 35.4 Output Power @ 1 dB compression2 0.4 — 22.2 — dBm 0.9 — 23.3 — 1.2 — 23.4 — 1.6 — 23.7 — 2.2 — 23.5 — DC Current Variation vs. Voltage 0.034 mA/mV Thermal Resistance 40 °C/W Absolute Maximum Ratings3,5 Parameter Ratings Operating Temperature4 -40°C to 85°C Channel Temperature 150°C DC Voltage (Pads Bias, RF-OUT & DC) 6V Power Dissipation 1.35W Input Power 25dBm 3. Permanent damage may occur if any of these limits are exceeded. These maximum ratings are not intended for continuous normal operation. 4. Defined with reference to ground pad temperature. 5. Measured in industry standard 8-lead 3x3 MCLP package. PMA-545G1-D+ 1. Measured on Mini-Circuits die Characterization test board. See Characterization Test Circuit (Fig. 1) 2. Current increases at P1dB.

Monolithic Low Noise E-PHEMT MMIC Amplifier Die Page 4 of 6 Notes A. Performance and quality attributes and conditions not expressly stated in this specification document are intended to be excluded and do not form a part of this specification document. B. Electrical specifications and performance data contained in this specification document are based on Mini-Circuit’s applicable established test performance criteria and measurement instructions. C. The parts covered by this specification document are subject to Mini-Circuits standard limited warranty and terms and conditions (collectively, “Standard Terms”); Purchasers of this part are entitled to the rights and benefits contained therein. For a full statement of the Standard Terms and the exclusive rights and remedies thereunder, please visit Mini-Circuits’ website at www.minicircuits.com/MCLStore/terms.jsp Mini-Circuits Characterization Test Circuit PMA-545G1-D+ Fig 1. Block Diagram of Test Circuit used for characterization. Gain, Output power at 1dB compression (P1dB), Output IP3 (OIP3), Noise Figure are mea- sured using Agilent’s N5242A PNA-X microwave network analyzer. Conditions: 1. Gain: Pin=-25 dBm 2. Output IP3 (OIP3): Two tones, spaced 1 MHz apart, 0 dBm/tone at output. 3. Vs adjusted for 5V at device (Vd), compensating loss of bias tee. Bias 1 Bias 2 Bias 1 Bias 2 Recommended Application Circuit Component Description DUT PMA-545G1-D+ Die C1, C2, C5, C6 100 pF C3, C4 1µF R1 0 Ω L1 36 nH L2 47 nH Die Layout Critical Dimensions Parameter Values Die Thickness, µm 100 Die Width, µm 725 Die Length, µm 1100 Bond Pad Size, µm 75 x 75 Fig 3. Bonding Pad Positions Bonding Pad Position (Dimensions in µm, Typical) Fig 2. Die Layout

Monolithic Low Noise E-PHEMT MMIC Amplifier Die Page 5 of 6 Notes A. Performance and quality attributes and conditions not expressly stated in this specification document are intended to be excluded and do not form a part of this specification document. B. Electrical specifications and performance data contained in this specification document are based on Mini-Circuit’s applicable established test performance criteria and measurement instructions. C. The parts covered by this specification document are subject to Mini-Circuits standard limited warranty and terms and conditions (collectively, “Standard Terms”); Purchasers of this part are entitled to the rights and benefits contained therein. For a full statement of the Standard Terms and the exclusive rights and remedies thereunder, please visit Mini-Circuits’ website at www.minicircuits.com/MCLStore/terms.jsp Mini-Circuits PMA-545G1-D+ Assembly Diagram Assembly and Handling Procedure 1. Storage Dice should be stored in a dry nitrogen purged desiccators or equivalent. 2. ESD MMIC Gallium Arsenide (GaAs) amplifier dice are susceptible to electrostatic and mechanical damage. Die are supplied in antistatic protected material, which should be opened in clean room conditions at an appropriately grounded anti-static worksta tion. Devices need careful handling using correctly designed collets, vacuum pickup tips or sharp antistatic tweezers to deter ESD damage to dice. 3. Die Attach The die mounting surface must be clean and flat. Using conductive silver filled epoxy, recommended epoxies are DieMat DM6030HK-PT/H579 or Ablestik 84-1LMISR4. Apply sufficient epoxy to meet required epoxy bond line thickness, epoxy fillet height and epoxy coverage around total die periphery. Parts shall be cured in a nitrogen filled atmosphere per manufacturer’s cure condition. It is recommended to use antistatic die pick up tools only. 4. Wire Bonding Bond pad openings in the surface passivation above the bond pads are provided to allow wire bonding to the dice gold bond pads. Thermosonic bonding is used with minimized ultrasonic content. Bond force, time, ultrasonic power and temperature are all critical parameters. Suggested wire is pure gold, 1 mil diameter. Bonds must be made from the bond pads on the die to the package or substrate. All bond wires should be kept as short as low as reasonable to minimize performance degradation due to undesirable series inductance. Recommended Wire Length, Typical Wire Wire Length (mm) Wire Loop Height (mm) RF-IN, RF-OUT & DC 0.8 0.15 BIAS 1, BIAS 2 1.2 0.15 GROUND 0.50 0.15 RF Reference Plane - No port extension Vs Ground RF reference plane Material: Roger 4350B 10 Mil Dielectric Constant: 3.5 Copper thickness: 0.5 Oz Finishing: ENIG DUT PMA-545G1-D+ REFERENCE PLANE

Monolithic Low Noise E-PHEMT MMIC Amplifier Die Page 6 of 6 Notes A. Performance and quality attributes and conditions not expressly stated in this specification document are intended to be excluded and do not form a part of this specification document. B. Electrical specifications and performance data contained in this specification document are based on Mini-Circuit’s applicable established test performance criteria and measurement instructions. C. The parts covered by this specification document are subject to Mini-Circuits standard limited warranty and terms and conditions (collectively, “Standard Terms”); Purchasers of this part are entitled to the rights and benefits contained therein. For a full statement of the Standard Terms and the exclusive rights and remedies thereunder, please visit Mini-Circuits’ website at www.minicircuits.com/MCLStore/terms.jsp Mini-Circuits PMA-545G1-D+ Performance Data Data Table Swept Graphs S-Parameter (S2P Files) Data Set with and without port extension(.zip file) Case Style Die Die Ordering and packaging information Quantity, Package Model No. Small, Gel - Pak: 10,50,100 KGD* Medium†, Partial wafer: KGD*<5K Large†, Full Wafer PMA-545G1-DG+ PMA-545G1-DP+ PMA-545G1-DF+ †Available upon request contact sales representative Refer to AN-60-067 Environmental Ratings ENV-80 Additional Notes A. Performance and quality attributes and conditions not expressly stated in this specification document are intended to be excluded and do not form a part of this specification document. B. Electrical specifications and performance data contained in this specification document are based on Mini-Circuit’s applicable established test performance criteria and measurement instructions. C. The parts covered by this specification document are subject to Mini-Circuits standard limited warranty and terms and conditions (collectively, “Standard Terms”); Purchasers of this part are entitled to the rights and benefits contained therein. For a full statement of the Standard Terms and the exclusive rights and remedies thereunder, please visit Mini-Circuits’ website at www.minicircuits.com/MCLStore/terms.jsp D. Mini-Circuits does not warrant the accuracy or completeness of the information, text, graphics and other items contained within this document and same are provided as an accommodation and on an “As is” basis, with all faults. E. Purchasers of this part are solely responsible for proper storing, handling, assembly and processing of Known Good Dice (including, without limitation, proper ESD preventative measures, die preparation, die attach, wire bond ing and related assembly and test activities), and Mini-Circuits assumes no responsibility therefor or for environmental effects on Known Good Dice. F . Mini-Circuits and the Mini-Circuits logo are registered trademarks of Scientific Components Corporation d/b/a Mini- Circuits. All other third-party trademarks are the property of their respective owners. A reference to any third-party trademark does not constitute or imply any endorsement, affiliation, sponsorship, or recommendation by any such third-party of Mini-Circuits or its products. ESD Rating** Human Body Model (HBM): Class 1B (500 to <1000V) in accordance with ANSI/ESD STM 5.1 - 2001 Machine Model (MM): Class M1 (passed 40V) in accordance with ANSI/ESD STM5.2-1999 Additional Detailed Technical Information additional information is available on our dash board. *Known Good Dice (“KGD”) means that the dice in question have been subjected to Mini-Circuits DC test performance criteria and measurement instructions and that the parametric data of such dice fall within a predefined range. While DC testing is not definitive, it does help to provide a higher degree of confidence that dice are capable of meeting typical RF electrical parameters specified by Mini-Circuits. ** Tested in industry standard 3x3mm, 8-lead, MCLP package.