PM3102D SHUNYE | Alldatasheet
Document overview
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- PDF pages: 6
Technical content
High Performance Offline PWM Driver
DESCRIPTION
PM3102D is a low-cost, highly integrated PWM power switch control chip . It is mainly used in non-isolated buck or boost system. PM3102D integrates 500V high -voltage MOSFET to meet the requirements of high - voltage impact, and can cover high-precision 5V output in full voltage range . PM3102D integrates an oscillator with frequency jitter function to simplify the EMI circuit . Having the unique standby control mode , PM3102D can automatically adjust the peak current to reduce standby power consumption. PM3102D integrates multiple protection functions, such as under voltage protection, output short circuit, over temperature protection and cycle-by-cycle current limiting , so as to improve the reli ability of LED constant current power supply. PM3102D is packaged in SOT23-3。
FEATURES
Less than 50mW standby power Support Buck/Buck Boost
applications
Integrate 500V MOSFET and high- voltage starting circuit Built-in soft start function Built-in oscillator with frequency jitter Low system cost Multiple protection functions: Over voltage protection Over temperature protection Cycle-by-cycle current limiting VDD under-voltage lockout Auxiliary power application of intelligent lighting Linear power or RCC alternative application TYPICAL APPLICATION CIRCUIT 3CS POWER-MICRO'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS, WITHOUT THE EXPRESS PRIOR WRITTEN APPROVAL OF THE CHIEF EXECUTIVE OFFICER GENERAL COUNSEL OF POWER MICRO-ELECTRONICS TECH CO.,LTD \` www.shunyegroup.com.cn
High Performance Offline PWM Driver Page 2 of 6 Power-Micro Semiconductor DS _PM3102D_EN_V1.0 3CS PIN CONFIGRATIONS 1 2 VDDDRN CS SOT23-3 PKG PIN DESCRIPTION PIN Number PIN Name Description
1 DRN Drain of internal MOSFET
2 VDD Power supply
3 CS Current sense
ORDERING INFORMATION
Part Number Package Type Packing Type Supplied As PM3102D SOT23-3 3,000 pcs/ Tape & Reel www.shunyegroup.com.cn
High Performance Offline PWM Driver Page 3 of 6 Power-Micro Semiconductor DS _PM3102D_EN_V1.0 AB SOLUTE MAXIMUN RATING(1)(2) Symbol Pin Number Parameter Value Unit VVDD 2 VDD to GND -0.3~6 V VDRN 1 DRN to GND -0.3~500 V Tj --- Max Operating Junction Temperature -40~150 ℃ TSTG --- Storage temperature range -65~150 ℃ --- --- Soldering temperature (10seconds) 260 ℃ Notes: (1) The “Absolute Maximum Ratings” are those values beyond which the safely to the device cannot be guaranteed and may cause permanent damage to the IC. These are stress ratings only and functional operation of the device at these or any other condition beyond those indicated in the Electrical Characteristics section of the specification is not implied. The “Electrical Characteristics” table defines the conditions for actual device operation. Exposure to absolute maximum rated conditions for extended periods may affect device reliability. For the parameter without Max./Min. limit, the typical value defines the operation range, the accuracy is not guaranteed by the specification. (2) All voltages are with respect to GND, unless otherwise specified. ELECTRICAL CHARACTERISTICS(3)(4) (All specification below at Ta=25℃，VDD=5V;unless otherwise specified.) Symbol Parameters Test Condition Min Typ Max Unit Power Supply IQ Quiescent current VDD=5.5V 160 300 uA VDD_Op VDD working voltage Normal full-load 5.35 5.5 5.65 V UVLO_ON Under-voltage lockout_ON 4.32 V UVLO_OFF Under-voltage lockout_OFF 4.73 V Vout Output regulation voltage 4.875 5 5.125 V Current Sense T_LEB Current sampling blanking time 600 nS V_OCP cycle-by-cycle limiting threshold 396 430 464 mV Td_ocp Overcurrent detection delay 100 nS Oscillator Fosc Oscillator frequency VDD=5.5V 28.2 31.25 34.5 kHz ΔF/Fosc Frequency jitter range -5 5 % T_shufle Frequency jitter cycle 32 mS Dmax Maximum duty cycle 24.9 25 25.1 % T_OLP Overload protection recovery time VDD=5.5V 128 mS www.shunyegroup.com.cn
High Performance Offline PWM Driver Page 4 of 6 DS _PM3102D_EN_V1.0 ELECTRICAL CHARACTERISTICS (continued) (3)(4) (All specification below at Ta=25℃，VDD=5V;unless otherwise specified.) Symbol Parameters Test Condition Min Typ Max Unit MOSFET BVdss(BR) Drain-source breakdown voltage 500 V Rdson Drain-source on resistance I_D=10mA 13 Ω I_JFET JFET current capacity D=30V,VDD=0V 1 mA I_Leakage MOSFET leakage current V_D=500V,VDD=6V 50 uA Over Temperature Protection TSD OTC reference 150 ℃ Notes: (3) Typical values in electrical characteristics are theoretical values of design, minimum and maximum values are guaranteed by test statistics. (4) The data is based on the results of PME laboratory tests. FUNCTION BLOCK DIAGRAM VDD CS DRN osc bg&ref logic drv vdd VDD 0.48V 500V MOS leb comp comp 25% duty limit otp olp Soft start por uvlo www.shunyegroup.com.cn
High Performance Offline PWM Driver Page 5 of 6 DS _PM3102D_EN_V1.0 SOT23-3 www.shunyegroup.com.cn
High Performance Offline PWM Driver Page 6 of 6 DS _PM3102D_EN_V1.0 ECN INFORMATIONS ECN DATE VERSION CHANGE REASON 2023-02-22 V1.0 From CN_V1.1 P.S.: (1) Power-Micro Semi reserves the final right to interpret the terms and conditions of this content. (2) Purchasers must request the latest version datasheet from Power-Micro Semi before placing orders. www.shunyegroup.com.cn