PM0028A SSDI | Alldatasheet

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NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: PM0028A DOC SPMQ613-02 Solid State Devices, Inc.

14701 Firestone Blvd * La Mirada, CA 90638

Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com 600V, 400A FAST SWITCHING IGBT HALF BRIDGE Designer’s Data Sheet FEATURES:

  • Hermetic construction, electrically isolated from the heatsinking baseplate
  • Fast switching
  • dual IGBT die with ultrafast freewheeling diode
  • Low switching and conduction losses
  • TX, TXV, and Space Level Screening Available Part Number/Ordering Information 1/ SPMQ613-02 __ └ Screening 2/ __ = Not Screened TX = TX Level TXV = TXV S = S Level MAXIMUM RATINGS3/ SYMBOL VALUE UNIT Collector – Emitter Breakdown Voltage VCES 600 V Gate – Emitter Voltage VGES ±20 V Max. Continuous Collector Current @ TC = 25ºC @ TC = 90ºC IC1 IC2 400 200 A Pulsed Collector Current I CM 600 A Clamped Inductive Load Current (TJ = 125ºC) I LM 200 A Reverse Voltage Avalanche Energy (IC = 100A) E ARV 10 mJ Operating & Storage Temperature T OP & TSTG -55 to +150 ºC Maximum Thermal Resistance (Junction to Case) Per switch R 0JC 0.25 ºC/W Total Device Dissipation @ TC = 25ºC Dissipation Derating From @ TC = 25ºC to TC = 150ºC PD1 PD2 500 W W/ºC Notes: 1/ For ordering information, price, and availability- Contact factory. 2/ Screening based on MIL-PRF-19500. Screening flows available on request. 3/ Unless otherwise specified, all electrical characteristics @25ºC.

NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: PM0028A DOC SPMQ613-02 Solid State Devices, Inc. Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com ELECTRICAL CHARACTERISTICS3/ SYMBOL MIN TYP MAX UNIT Collector - Emitter Breakdown Voltage (ICES = 500μA, VGE = 0V) BVCES 600 670 –– V Gate - Emitter Threshold Voltage (IC = 0.5mA, VCE = VGE) TA= 25oC TA= 125oC TA= -55oC VGE(th) 2.5 5.2 5.0 6.0 V Collector - Emitter Saturation Voltage IC = 200A @ 25oC IC = 300A @ 25oC IC = 400A @ 25oC IC = 200A @ 125oC IC = 400A @ 125oC IC = 200A @ -55oC IC = 400A @ -55oC VCE(on) –– 1.70 2.15 2.35 1.65 2.20 1.70 2.25 2.4 2.2 V Gate - Emitter Leakage Current (VGE = ±20V, VCE = 0V) TA= 25oC TA= 125oC TA= -55oC IGES –– 0.02 0.1 0.01 1.0 μA Collector Leakage Current (VCE = 600 V, VGE = 0V) TA= 25oC TA= 125oC TA= -55oC ICES1 ICES2 ICES3 2.5 400 μA mA μA Forward Transconductance (IC = IC2, VCE = 10V) gfs 20 –– –– S Gate Charge Total Gate Charge Gate-Emitter Charge Gate-Collector Charge V GE = 15V IC = 10A VCE = 300V Qg(on) Qge Qgc 1200 150 650 1500 300 750 nC Capacitance Input Capacitance Output Capacitance Reverse Transfer Capacitance V GE = 0V VCE = 25V f = 1 MHz Cies Coes Cres 17,000 3000 1200 20,000 4,000 2,000 pF Resistive Switching Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time V CC = 300V VGE = 15V IC = 80A td(on) tr td(off) tf 150 550 550 2000 nsec Inductive Switching Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time V CC = 300V VGE = 15V IC = 80A RG = 10Ω L = 100µH td(on) tr td(off) tf 150 140 600 300 500 175 1000 500 nsec ANTI-PARALLEL DIODE Peak Current Ipk –– –– 400 A Peak Inverse Voltage PIV –– –– 600 V Average Current Iavg –– –– 200 A Diode Forward Voltage @ IF=100A, TJ=25 oC IF= 200A, TA= 25oC IF= 600A, TA= 25oC IF= 600A, TA= -55oC IF= 600A, TA= 125oC VF –– 1.1 1.6 1.8 1.4 1.5 V Reverse Recovery Time (If=40A, di/dt=200A/µsec) trr –– 200 2000 nsec

NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: PM0028A DOC SPMQ613-02 Solid State Devices, Inc. Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com CASE OUTLINE: ASPM