PM0010 SSDI | Alldatasheet

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SOLID STATE DEVICES, INC. SPMQ496-01 FEATURES: DATA SHEET #: PM0010A MAXIMUM RATINGS Collector to Emiter Voltage V olts

400 AMP/600 VOLTS

DESIGNER’S DATA SHEET

14005 Stage Road * Santa Fe Springs, Ca 90670

Phone: (562) 404-4474 * Fax: (562) 404-1773 NOTE: All specifications are subject to change without notification. SCD’s for these devices should be reviewed by SSDI prior to release. CHARACTERISTIC SYMBOL V ALUE UNIT VCES 600 Continuous Collector Current Amps400 200 IC1 IC2 Operating and Storage Temperature -55 TO +150TOP & TSTG Pulse Collector Current 1/ AmpsICM Thermal Resistance, Junction to Base oC/W0.141JB o C 600 ASPM Gate to Collector Voltage V oltsVGES "20 ELECTRICAL SCHEMATIC • High Current Switching for Motor Drives and Inverters for Space Applications. • Push-Pull Configuration with Freewheeling Diodes. • Low Saturation Voltage at High Currents. • Low Mechanical Stress Design. • Hermetic Sealed Construction for Aerospace Applications. • Excellent Thermal Management. • Full Power Screened Hermetic Discretes. • TX, TXV, and S-Level Screening Available. • Consult Factory for: • Faster Switching Speeds; • Other Bridge Configurations and Terminal Styles. TB = 25oC TB = 90oC Clamped Inductive Load Current (TB = 125 EC, VCC = 480V , VGE = 15V , L = 30uH, RG = 10S AmpsILM 200 Reverse Voltage Avalange Energy 1/ (IC = 200A) mJ EARV 5.6 W W/oC 1250 PD1 PD2 Total Module Dissipation @TB = 25oC Dissipation Derating from TB = 25oC to TB = 150oC 1/ Pulse Duration Limited by T JMAX; Repetative Rating

SOLID STATE DEVICES, INC. PRELIMINARY Phone: (562) 404-4474 * Fax: (562) 404-1773 ELECTRICAL CHARACTERISTICS @ TJ =25oC (Unless Otherwise Specified) Collector - Emitter Breakdown Voltage (ICES = 250:A, VGE = 0V) RATING SYMBOL MIN MAX UNIT PACKAGE OUTLINE: ASPM Gate - Emitter Threshold Voltage (IC = 5mA, VCE = VGE) VCE(sat)2 VCE(sat)1 (TB = 25oC) (TB = 90oC) 3.1 2.5 SPMQ496-01 Gate-Emitter Leakage Current GE = "20V, VCE = 0V) ICES1 ICES1 - 2.0IGES 225 BVCES - Volts600 Tolerances (Unless specified): .XX .XXX ".03 ".010 Collector-Emitter Saturation Voltage (IC = 200A, VGE = 15V) VGE(th) (TB = 25oC) (TB = 125oC) Collector Leakage Current (VCE = 480V , VGE = 0V) Anti-Parallel Diode Forward Voltage (IF = 200A, TB = 25oC) Insulation Resistance (All terminals to Base @1500V) RINSUL1 1- G S 2.0 6 Volts :Amps mAmps Volts :Amps - 1.6VF Volts