PM0002 SSDI | Alldatasheet

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SOLID STATE DEVICES, INC. SPMQ461-01 FEATURES: DATA SHEET #: PM0002B MAXIMUM RATINGS Collector to Emiter Voltage, per Leg V olts

200 AMP/600 VOLTS

DESIGNER'S DATA SHEET

14005 Stage Road * Santa Fe Springs, Ca 90670

Phone: (562) 404-4474 * Fax: (562) 404-1773 NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. CHARACTERISTIC SYMBOL V ALUE UNIT V CES 600 Continuous Collector Current, per Leg Amps200 100 IC1 IC2 Operating and Storage Temperature -55 TO +150T OP & TSTG Pulse Collector Current, per Leg 1/ AmpsICM Thermal Resistance, Junction to Base, per Leg oC/W0.281JB o C 300 ASPM Gate to Collector Voltage V oltsV GES "20 ELECTRICAL SCHEMATIC

  • High Current Switching for Motor Drives and Inverters for Space Applications.
  • Push-Pull Configuration with Freewheeling Diodes.
  • Low Saturation Voltage at High Currents.
  • Low Mechanical Stress Design.
  • Hermetic Sealed Construction for Aerospace Applications.
  • Excellent Thermal Management.
  • Full Power Screened Hermetic Discretes.
  • TX, TXV, and S-Level Screening Available.
  • Consult Factory for:
  • Faster Switching Speeds;
  • Other Bridge Configurations and Terminal Styles. TB = 25oC TB = 90oC Clamped Inductive Load Current, per Leg (TB = 125 EC, VCC = 480V , VGE = 15V , L = 30uH, RG = 10S AmpsILM 100 Reverse Voltage Avalange Energy, per Leg 1/ (IC = 100A) mJ E ARV 5.6 W W/ oC 625 P D1 P D2 Total Module Dissipation, per Leg @T B = 25oC Dissipation Derating from TB = 25oC to T B = 150oC , per Leg 1/ Pulse Duration Limited by TJMAX ; Repetative Rating

SOLID STATE DEVICES, INC. PRELIMINARY Phone: (562) 404-4474 * Fax: (562) 404-1773 ELECTRICAL CHARACTERISTICS @ T J =25oC, per Leg (Unless Otherwise Specified) Collector - Emitter Breakdown Voltage (ICES = 250:A, VGE = 0V) RATING SYMBOL MIN MAX UNIT PACKAGE OUTLINE: ASPM Gate - Emitter Threshold Voltage (IC = 5mA, VCE = VGE ) V CE(sat)2 V CE(sat)1 (TB = 25oC) (TB = 90oC) 3.1 2.5 SPMQ461-01 Gate-Emitter Leakage Current GE = "20V , VCE = 0V) ICES1 ICES1 - 2.0IGES 225 BV CES - Volts600 Tolerances (Unless specified): .XX .XXX ".03 ".010 Collector-Emitter Saturation Voltage (IC = 100A, VGE = 15V) V GE(th) (TB = 25oC) (TB = 125oC) Collector Leakage Current (VCE = 480V , VGE = 0V) Anti-Parallel Diode Forward Voltage (IF = 100A, TB = 25oC) Insulation Resistance (All terminals to Base @1500V) R INSUL1 1- G S 2.0 6 Volts :Amps mAmps Volts :Amps - 1.6V F Volts