PLPV801DBVT

LPV801 TI1 | Alldatasheet

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PRODUCT□PREVIEW +VREF +VREF R Load LPV802a LPV802b CE WE RE C F R F VOUT Output to Comparator LPV802aIR LPV802b VREF Product Folder Sample & Buy T echnical Documents Tools & Software Support & Community An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectual property matters and other important disclaimers. PRODUCT PREVIEW Information. Product in design phase of development. Subject to change or discontinuance without notice. LPV801, LPV802 SNOSCZ3 –AUGUST 2016 LPV801/LPV802320nANanopowerOperationalAmplifiers

1 Features

1• Nanopower Supply Current: 320 nA/channel (typ)

• Offset Voltage: 3.5 mV (max)
• Good TcVos: 1.5 µV/°C (typ)
• Unity Gain-Bandwidth: 8 kHz
• Unity-Gain Stable
• Low Input Bias Current : 0.1pA (typ)
• Wide Supply Range: 1.6 V to 5.5 V
• Rail-to-Rail Output
• No Output Reversals
• EMI Protection
• Temperature Range: –40°C to 125°C
• Industry Standard Packages: – Single in 5-pin SOT-23 – Dual in 8-pin VSSOP

2 Applications

• Gas Detectors such as CO and O2
• Motion Detectors Using PIR Sensors
• Ionization Smoke Alarms
• Thermostats
• Remote Sensors, IoT
• Active RFID Readers and Tags
• Portable Medical Equipment (1) For all available packages, see the orderable addendum at the end of the datasheet.

3 Description

The LPV801 (single) and LPV802 (dual) comprise a family of ultra-low-power operational amplifiers for “Always ON”sensing applications in wireless and low power wired equipment. With 8kHz of bandwidth from 320nA of quiescent current, the LPV80x amplifiers minimize power consumption in equipment such as CO detectors, smoke detectors and motion detecting security systems where operational battery-life is critical. In addition to being ultra-low-power, the LPV80x amplifiers have CMOS input stages with typically femto-amp bias currents which reduces errors commonly introduced in transimpedance amplifier (TIA) configurations with megaohm feedback resistors and high source impedance sensing applications. The LPV80x amplifiers also feature a negative-rail sensing input stage and a rail-to-rail output stage that is capable of swinging within millivolts of the rails, maintaining the widest dynamic range possible. EMI protection is designed into the LPV80x in order to reduce system sensitivity to unwanted RF signals from mobile phones, WiFi, radio transmitters and tag readers. The LPV80x amplifiers operate with a total supply voltage as low as 1.6V, ensuring continuous performance in low battery situations over the extended temperature range of –40ºC to 125ºC. The single and dual channel versions are available in industry standard 5-pin SOT-23 and 8-pin VSSOP packages respectively. Device Information(1) PART NUMBER PACKAGE BODY SIZE LPV801 SOT-23 (5) 2.90 mm x 1.60 mm LPV802 VSSOP (8) 3.00 mm × 3.00 mm Nanopower Electrochemical Sensor Amplifier Nanopower PIR Motion Sensor Amplifier

PRODUCT□PREVIEW LPV801, LPV802 SNOSCZ3 –AUGUST 2016 www.ti.com Submit Documentation Feedback Copyright © 2016, Texas Instruments Incorporated Table of Contents

8.2 Typical Application: Three Terminal CO Gas Sensor

11.2 Receiving Notification of Documentation Updates 19

12 Mechanical, Packaging, and Orderable

4 Revision History

June 2016 * Initial release Product Preview

PRODUCT□PREVIEW OUT□B /c45IN□B +IN□B OUT□A /c45IN□A +IN□A V/c45 A B /c45IN OUT V/c45 +IN LPV801, LPV802 www.ti.com SNOSCZ3 –AUGUST 2016 Submit Documentation FeedbackCopyright © 2016, Texas Instruments Incorporated

5 Pin Configuration and Functions

Pin Functions: LPV801 DBV PIN I/O DESCRIPTION NAME NUMBER OUT 1 O Output -IN 2 I Inverting Input +IN 3 I Non-Inverting Input V- 4 P Negative (lowest) power supply V+ 5 P Positive (highest) power supply Pin Functions: LPV802 DGK PIN I/O DESCRIPTION NAME NUMBER OUT A 1 O Channel A Output -IN A 2 I Channel A Inverting Input +IN A 3 I Channel A Non-Inverting Input V- 4 P Negative (lowest) power supply +IN B 5 I Channel B Non-Inverting Input -IN B 6 I Channel B Inverting Input OUT B 7 O Channel B Output V+ 8 P Positive (highest) power supply

PRODUCT□PREVIEW LPV801, LPV802 SNOSCZ3 –AUGUST 2016 www.ti.com Submit Documentation Feedback Copyright © 2016, Texas Instruments Incorporated (1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. (2) Not to exceed -0.3V or +6.0V on ANY pin, referred to V- (3) Input terminals are diode-clamped to the power-supply rails. Input signals that can swing more than 0.3 V beyond the supply rails should be current-limited to 10 mA or less. (4) Short-circuit to Vs/2, one amplifer per package. Continuous short circuit operation at elevated ambient temperature can result in exceeding the maximum allowed junction temperature of 150°C.

6 Specifications

6.1 Absolute Maximum Ratings

Over operating free-air temperature range (unless otherwise noted) (1) MIN MAX UNIT Supply voltage, Vs = (V+) - (V-) –0.3 6 V Input pins Voltage (2) (3) Common mode (V-) - 0.3 (V+) + 0.3 V Differential (V-) - 0.3 (V+) + 0.3 V Input pins Current -10 10 mA Output short current (4) Continuous Continuous Operating temperature –40 125 °C Storage temperature, Tstg –65 150 °C Junction temperature 150 °C (1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. Manufacturing with less than 500-V HBM is possible with the necessary precautions. Pins listed as ±2000 V may actually have higher performance. (2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. Manufacturing with less than 250-V CDM is possible with the necessary precautions. Pins listed as ±750 V may actually have higher performance.

6.2 ESD Ratings

V(ESD) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±1000 VCharged-device model (CDM), per JEDEC specification JESD22- C101(2) ±250

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted) MIN NOM MAX UNIT Supply voltage (V+ – V–) 1.6 5.5 V Specified temperature -40 125 °C (1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.

6.4 Thermal Information

THERMAL METRIC(1) LPV801 DBV 5 PINS LPV802 DGK 8 PINS UNIT θJA Junction-to-ambient thermal resistance 177.4 184.2 ºC/W θJCtop Junction-to-case (top) thermal resistance 133.9 75.3 θJB Junction-to-board thermal resistance 36.3 105.5 ψJT Junction-to-top characterization parameter 23.6 13.5 ψJB Junction-to-board characterization parameter 35.7 103.9

PRODUCT□PREVIEW LPV801, LPV802 www.ti.com SNOSCZ3 –AUGUST 2016 Submit Documentation FeedbackCopyright © 2016, Texas Instruments Incorporated (1) LPV801 Specifications are Preliminary until released.

6.5 Electrical Characteristics

TA = 25°C, VS = 1.8V to 5 V, VCM = VOUT = VS/2, and RL≥ 10 MΩ to VS / 2, unless otherwise noted.(1) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT OFFSET VOLTAGE VOS Input offset voltage VS = 1.8V, 3.3V, and 5V, VCM = V- 0.55 ±3.5 mV VS = 1.8V, 3.3V, and 5V, ΔVOS/ΔT Input offset drift VCM = V- TA = –40°C to 125°C 1.5 µV/°C PSRR Power-supply rejection ratio VS = 1.8V to 5V, VCM = V- 1.6 60 µV/V INPUT VOLTAGE RANGE VCM Common-mode voltage range VS = 5 V 0 4.1 V CMRR Common-mode rejection ratio (V–) ≤ VCM ≤ (V+) – 0.9 V, VS= 5V 80 98 dB INPUT BIAS CURRENT IB Input bias current VS = 1.8V 100 fA IOS Input offset current VS = 1.8V 100 INPUT IMPEDANCE Differential 8 pF Common mode 3.8 NOISE En Input voltage noise ƒ = 0.1 Hz to 10 Hz 25 µVp-p en Input voltage noise density ƒ = 100 Hz 340 nV/√Hz ƒ = 1 kHz 420 OPEN-LOOP GAIN AOL Open-loop voltage gain (V–) + 0.3 V ≤ VO ≤ (V+) – 0.3 V, RL = 100 kΩ 135 dB OUTPUT VOH Voltage output swing from positive rail VS = 1.8V, RL = 100 kΩ to V+/2 10 6 mV VOL Voltage output swing from negative rail VS = 1.8V, RL = 100 kΩ to V+/2 4 10 ISC Short-circuit current Short to VS/2 4.7 mA ZO Open loop output impedance ƒ = 1 KHz, IO = 0 A 94.5 kΩ FREQUENCY RESPONSE GBP Gain-bandwidth product CL = 20 pF, RL = 10 MΩ, VS = 5V 8 kHz SR Slew rate (10% to 90%) G = 1, Rising Edge, CL = 20 pF, VS = 5V 1.8 V/ms G = 1, Falling Edge, CL = 20 pF, VS = 5V 1.7 POWER SUPPLY IQ-LPV801 Quiescent Current, Per Channel VCM = V-, IO = 0, VS = 3.3 V 450 550 nA IQ-LPV802 Quiescent Current, Per Channel VCM = V-, IO = 0, VS = 3.3 V 320 415 nA

6.6 Typical Characteristics

at TA = 25°C, VS = 5V, RL = 10MΩ to VS/2 ,CL = 20pF, VCM = VS / 2V unless otherwise specified. Figure 1. Supply Current vs. Supply Voltage, Low VCM Figure 2. Supply Current vs. Supply Voltage, High VCM Figure 3. Supply Current vs. Common Mode Voltage, 1.8V Figure 4. Supply Current vs. Common Mode Voltage, 3.3V Figure 5. Supply Current vs. Common Mode Voltage, 5V Figure 6. Typical Offset Voltage vs. Common Mode Voltage,

PRODUCT□PREVIEW LPV801, LPV802 www.ti.com SNOSCZ3 –AUGUST 2016 Submit Documentation FeedbackCopyright © 2016, Texas Instruments Incorporated

7 Detailed Description

7.1 Overview

The LPV80x is unity-gain stable and can operate on a single supply, making it highly versatile and easy to use. Parameters that vary significantly with operating voltages or temperature are shown in the Typical Characteristics curves.

7.2 Functional Block Diagram

7.3 Feature Description

The amplifier's differential inputs consist of a non-inverting input (+IN) and an inverting input (–IN). The amplifer amplifies only the difference in voltage between the two inputs, which is called the differential input voltage. The output voltage of the op-amp VOUT is given by Equation 1: VOUT = AOL (IN+ – IN–) where

• AOL is the open-loop gain of the amplifier, typically around 100 dB (100,000x, or 100,000 Volts per microvolt). (1)

7.4 Device Functional Modes

7.4.1 Negative-Rail Sensing Input

The input common-mode voltage range of the LPV80x extends from (V-) to (V+) – 0.9 V. In this range, low offset can be expected with a minimum of 80dB CMRR. Operation of the LPV80x beyond (V+) - 0.9V is possible, however, the offset voltage is not specified. Because of this, the LPV80x is protected from output "inversions" or "reversals" as long as the input common mode voltage range stays within the input pin Absolute Maximum Ratings range.

7.4.2 Rail to Rail Output Stage

The LPV80x output voltage swings 3 mV from rails at 3.3 V supply, which provides the maximum possible dynamic range at the output. This is particularly important when operating on low supply voltages. The LPV80x Maximum Output Voltage Swing graph defines the maximum swing possible under a particular output load.

7.4.3 Design Optimization for Nanopower Operation

When designing for ultralow power, choose system feedback components carefully. To minimize quiecent current consumption, select large-value feedback resistors. Any large resistors will react with stray capacitance in the circuit and the input capacitance of the operational amplifier. These parasitic RC combinations can affect the stability of the overall system. A feedback capacitor may be required to assure stability and limit overshoot or gain peaking. When possible, use AC coupling and AC feedback to reduce static current draw through the feedback elements. Use film or ceramic capacitors since large electolytics may have large static leakage currents in the nanoamps.

7.4.4 Driving Capacitive Load

The LPV80x is internally compensated for stable unity gain operation, with a 8 kHz typical gain bandwidth. op amp might start oscillating. Figure 43. By using this isolation resistor, the capacitive load is isolated from the amplifier’s output. The larger reduced output current drive. The recommended value for RISO is 30-50kΩ. Figure 43. Resistive Isolation Of Capacitive Load

8 Application and Implementation

validate and test their design implementation to confirm system functionality.

8.1 Application Information

8.2 Typical Application: Three Terminal CO Gas Sensor Amplifier

Figure 44. Three Terminal Gas Sensor Amplifer Schematic

8.2.1 Design Requirements

though it is applicable to many other type three terminal gas sensors or electrochemical cells. Reference Electrode (“RE”). A current flows between the CE and WE proportional to the detected concentration. U1, the servo feedback action will maintain the RE pin at a potential set by VREF. and set the feedback time constant. U2 forms a transimpedance amplifer ("TIA") to convert the resulting sensor current into a proportional voltage. The transimpedance gain, and resulting snesitivity, is set by RF according to Equation 2 . output filter and ADC reservoir capacitor to drive the ADC.

PRODUCT□PREVIEW LPV801, LPV802 SNOSCZ3 –AUGUST 2016 www.ti.com Submit Documentation Feedback Copyright © 2016, Texas Instruments Incorporated Typical Application: Three Terminal CO Gas Sensor Amplifier (continued)

8.2.2 Detailed Design Procedure

For this example, we will be using a CO sensor with a sensitivity of 69nA/ppm. The supply votlage and maximum ADC input voltage is 2.5V, and the maximum concentration is 300ppm. First the VREF voltage must be determined. This voltage is a compromise between maximum headroom and resolution, as well as allowance for "footroom" for the minimum swing on the CE terminal, since the CE terminal generally goes negative in relation to the RE potential as the concentration (sensor current) increases. Bench measuements found the difference between CE and RE to be 180mV at 300ppm for this particular sensor. To allow for negative CE swing "footroom" and voltage drop across the 10k resistor, 300mV was chosen for VREF. Therefore +300mV will be used as the minimum VZERO to add some headroom. VZERO = VREF = +300mV where

• VZERO is the zero concentration voltage
• VREF is the reference voltage (300mV) (3) Next we calculate the maximum sensor current at highest expected concentration: ISENSMAX = IPERPPM * ppmMAX = 69nA * 300ppm = 20.7uA where
• ISENSMAX is the maximum expected sensor current
• IPERPPM is the manufacturer specified sensor current in Amps per ppm
• ppmMAX is the maximum required ppm reading (4) Now find the available output swing range above the reference voltage available for the measurement: VSWING = VOUTMAX – VZERO = 2.5V – 0.3V = 2.2V where
• VSWING is the expected change in output voltage
• VOUTMAX is the maximum amplifer output swing (usually near V+) (5) Now we calculate the transimpedance resistor (RF) value using the maximum swing and the maximum sensor current: RF = VSWING / ISENSMAX = 2.2V / 20.7µA = 106.28 kΩ (we will use 110 kΩ for a common value) (6)

8.2.3 Application Curve

Figure 45. Monitored Voltages when exposed to 200ppm CO voltage, VW, as the concentration increases. which will be used for the ppm calculation. Figure 46. Calculated Sensor Current Figure 47. Calculated ppm Equation 8 shows the resulting conversion of the sensor current into ppm. any continuous sensor current must also be included in supply current budget calculations.

8.3 Do's and Don'ts

Do properly bypass the power supplies. Do add series resistance to the output when driving capacitive loads, particularly cables, Muxes and ADC inputs. the supplies. Limit the current to 1mA or less (1KΩ per volt).

9 Power Supply Recommendations

presented in the Typical Characteristics. Supply voltages larger than 6 V can permanently damage the device. suggested that 100 nF capacitors be placed as close as possible to the operational amplifier power supply pins. between V+ and ground, and one capacitor between V– and ground. if kilohertz or above noise is expected on the power supply lines.

10 Layout

10.1 Layout Guidelines

The V+ pin should be bypassed to ground with a low ESR capacitor. The optimum placement is closest to the V+ and ground pins. The ground pin should be connected to the PCB ground plane at the pin of the device. The feedback components should be placed as close to the device as possible to minimize strays.

10.2 Layout Example

Figure 48. SOT-23 Layout Example (Top View)

11 Device and Documentation Support

11.1 Device Support

11.1.1 Development Support

11.2 Receiving Notification of Documentation Updates

changed. For change details, review the revision history included in any revised document.

11.3 Related Links

resources, tools and software, and quick access to sample or buy. Table 1. Related Links

11.4 Trademarks

All trademarks are the property of their respective owners.

11.5 Electrostatic Discharge Caution

during storage or handling to prevent electrostatic damage to the MOS gates.

11.6 Glossary

This glossary lists and explains terms, acronyms, and definitions.

12 Mechanical, Packaging, and Orderable Information

this document. For browser-based versions of this data sheet, refer to the left-hand navigation.

www.ti.com 10-Aug-2016 Addendum-Page 1 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Drawing Pins Package Qty Eco Plan (2) Lead/Ball Finish (6) MSL Peak Temp (3) Op Temp (°C) Device Marking (4/5) Samples LPV801DBVR PREVIEW SOT-23 DBV 5 3000 TBD Call TI Call TI -40 to 125 LPV801DBVT PREVIEW SOT-23 DBV 5 250 TBD Call TI Call TI -40 to 125 LPV802DGKR PREVIEW VSSOP DGK 8 2500 TBD Call TI Call TI -40 to 125 LPV802DGKT PREVIEW VSSOP DGK 8 250 TBD Call TI Call TI -40 to 125 PLPV801DBVT PREVIEW SOT-23 DBV 5 250 TBD Call TI Call TI -40 to 125 (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability information and additional product content details. TBD: The Pb-Free/Green conversion plan has not been defined. Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes. Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above. Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material) (3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature. (4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device. (5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation of the previous line and the two combined represent the entire Device Marking for that device. (6) Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finish value exceeds the maximum column width. Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and

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