PL100Z STMICROELECTRONICS | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 3
Technical content
S G S-THOMSON S59C D | 2929237? gode4i? & I Te T-1[-3$7 PAY 7 59C 02497 D ..- (.\\ THOMSON-Wor : PL 3V3Z — PL200Z b - DIVISION SEMICONOUCTEURS . : ZENER DIODES \\ DIODES ZENER Prot = 1.3W : 1,3 W silicon Zener diodes, hermetically sealed 3.3 V < VzT nom < 200 V plastic according to normalization CCTU : F 126 offering the following advantages : . © Large voltage range :3,3V to200V : @ High surge capability : 30 W @ 10 ms i Diodes Zener de 1,3 W au silicium encepsulées plastique selon normalisation CCTU: F126 Gace, :F-126 (C8-210) | offrant les avantages suivants : ‘er : : © Gamme de tension étendue :3,3V 8200V © Forte tenue en surcharge : 30 W@ 10 ms . : ABSOLUTE RATINGS (LIMITING VALUES) tT, = 50°C d=10 {Unless otherwise stated) . VALEURS LIMITES ABSOLUES D'UTILISATION. jamb = 10mm (Sauf indications contraires) i DC power dissipation (ee fig. 1) Dissipation de puissance en régime permanent (voir fig. 1) Continuous raverse current See page 2 Courant inverse continu Voir page 2 Non repetitive surge peak power dissipation (t = 10 ms) (see fig. 4) 4. a m [sauceanecesaeea demure mm are | ran [| w | Operating temperature eee | ow | mei | | Maximum junction temperature max y Température maximale de jonction i Maximum lead temperature for soldering during 3 s at 5 mm from case qT Température maximum de soudure des connexions pendant 3s 4 mm du bottier tL Junction-ambient thermal resistance R, of eaisence therentze fonction anit mem te en December 1982- 1/3 ‘50, rue Jean-Pierre Timbaud - B.P. 5 THOMSON F 92403 Courbevole Cedex FRANCE <TéLz(1)768'5001 Tex 610860 F 143 A COMPOSANTS | ne *
S G S~THOMSON SIC DO | 792923? Go0e498 T | PLaV3Z— PL20Z 0 e = ELECTRICALCHARACTERISTIC = T,a25eG hee - .,, CARACTERISTIQUES ELECTRIQUES = '®™" 5 FNS - ~ 59C, 02498 Of { Var ter | ravtzr | tr | evz | nvm | nn mar | rae oe | mm “ am | ima | aotecy | Gad PLavaz 3135] 10 | 10 | -6 320 PL avez 34 3a} 0 | 10 | 56 280 PLavez a7 a1 | to | wo | -s 280 PLavaz 4048 7 | wo} -4 260 PLav7z 4450 7 | wo | -2 215 PLBVIZ 48 54 5 | 100 1 200 PLBvez 52 60 2 | 100 28 ‘ig0 PLevez 5B 86 2 | 100 32 170 PLevez 6472 2 | 100 4 155 PLIVEZ 7 79 2 | 100 45 1 2. | 10 PLevez 77 87 2 | 10 48 1 38 | 130 PLoviz 85 96 4 | 60 5A 1 38 | 120 PIO Z 94 106 4 50 55 1 5 | 105 PLinz wa 118 7 50 6 1 5s | 97 . PLiz Z Ma 27 7 | #0 65 1 7 | 8 : PLB Z waa] wo | 60 65 1 7 2 i PLIS Z 38 we] 0 | 50 7 1 wo | 7 i PLig Z 3 7 | | 28 7 1 1 | 66 : PLig z we isi} 16 | 25 75 1 wo | @ j PL20 2 we 22] 16 | 2 78 1 to | 86 H PL22 2 ns 23] 15 25 8 1 2 | 8 : pL 28 Z ze 26! 16 | 2 8 1 2] 4 : Pla z 21 29} 1% | 25 85 1 wd ai PL 30 Z Bw 6 | 2 85 1 4 | 38 PLa3 Z 338 1% | 2 85 1 7 33 . PL6 Z x 3 40 10 85 1 7 | 3 : PL39 Z oa 40 10 8 1 20 | 28 Plas Z 0 46 5 10 8 1 2 | 26 . . PLa7 Z 4 60 48 10 9 1 24 | 2s : PLBL Z 3 BA 60 10 8 1 ma | oa PLE6 Z 2 60 60 10 8 1 28 19 ' pLe2 Z 8 6 80 10 9 1 28 16 PLes Z a R 80 10 8 1 34 5 PLS Z n 7 100 10 9 1 34 14 PL82.Z 7 8 100 10 8 1 a 2 Plot z 6 200 5 8 1 4“ 2 : PL 1002 4 108 200 5 8 1 so | it PL 1102 ws ne | 280 5 95 1 50 10 PL 1202 4 tay | 250 5 95 1 60 ° PL10Z 14 tat 300 5 85 1 60 8 PL is0z 138 158 | 300 5 98 1 78 7 PL i60z 301 350 5 95 1 bd 7 PL 1802 168191 350 5 95 1 80 6 PL 2002 wes 212 | 350 5] 1 °0 5 Forward vokage drops Ve < 1,5V @ Ip = 200mA, Temb = 25°C Chute de tension directe °F <™ F * Temb CASE DESCRIPTION DESCRIPTION DU BOITIER 26min. 6,35max., 26min, it 127 3,05 max. Weight . 9.49 max max Masse * “ ji. ‘Marking clear, ring at cathode end SF (st ——— i Marquage en clair, anneau coté cathode 13 0.76 2 i 0.86 0.86 F126 (CB-210) : 144 j - a ee er
S G S~THOMSON sqc D | 2929237? o002499 1 I . PL3V3Z - PL200Z ~ _ 59C 02499" DT-I-JF_ age Reh ja (CCW) fd A A [_ Mountingn®2)_] . FRounting rap IS roof TTT SeeReeS Ne ee | Fg SA A Pr TrTyry yyy esl Leer tT TT Sn ee SS } SSIS rr ae Ree SSE ECE os ESI ober rrr ad | Frey rrr rrr ee es a A A ry 0 50 100, 150, 5 10 15 20 25 Fig. 1 - Maximum allowable power dissipation versus Fig. 2 - Thermal resistance junction-amblent versus lead ambient temperature. length (typical values). ° Mounting n® 1: Mounting n° 2: INFINITE HEATSINK 18 PRINTED CIRCUIT » ‘a : — ; Test point of Teonnexion Welding | Rzt (2) Prsm (W)
102 SS ae 16 See
= EASES RRS LN SS 10 ees Pa tere | 103 fe REN ia 21 ~ 2 matte ee : FRSa ere Ea Se ' A | a , SS SSS Seeey 10? ei re F=F EET 2"; ome tier Sees cote eae ere ee ei i iE 1 10 102 103 102 101 1 10! Fig. 3 - Differential resistance Rzy versus VzT for Fig. 4 - Non repetitive surge peak reverse power dissipa- ! different currents iz7 (typical values). tion PRgM versus pulse duration at Tj Initial = 25°C Zan (% Rh) {maximum valves emia)
102 EEE re rey 102 EEE
eee Sst meri comet i emmni FERS FE HEH ae EEEEEEEEEEEEEEH ae eatin HEH att LET TI TTT ne SS Seeei a ih eesithi ees mat Py Sasnn Zaeeeenees| eer Cetin ttt tH FREE PET intial “hig0° | PO OO Seee7 sa eues COU TTT TE TTT CoA 103 102107 1 10 102 La EN TTT Haase Fig. § - Transient thermal impedance junction-connexions 1 titty tt 2th 98, versus pulse duration for mounting n° 1 with Shia ssassecSssaa| 2° 10m types values). von Seveseggeesee Fig ~ Peek forward t Cr
1.8 Peak forward curren
Fins - Peaktorwardeurent PTET rou, wor Meme woe TTT TTITT haan values). 10-1 06 1 15 2 . 145 ee