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P-Ch 30V Fast Switching MOSFETs Symbol Parameter Rating Units VDS Drain-Source Voltage -30 V VGS Gate-Source Voltage ±12 V ID@TA=25℃ Continuous Drain Current -4.3 A ID@TA=70℃ Continuous Drain Current -3.6 A IDM Pulsed Drain Current2 -20 A PD@TA=25℃ Total Power Dissipation3 1.4 W PD@TA=70℃ Total Power Dissipation3 0.9 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Symbol Parameter Typ. Max. Unit RθJA Thermal Resistance Junction-Ambient 1 --- 125 ℃/W RθJA Thermal Resistance Junction-Ambient 1 (t ≤10s) --- 85 ℃/W BVDSS RDS ON ID V m Ω A The PKN3601 is the high cell density trenched P-ch MOSFETs, which provides excellent RDSON and efficiency for most of the small power switching and load switch applications. The PKN3601 meet the RoHS and Green Product requirement with full function reliability approved. Green Device Available Super Low Gate Charge Excellent CdV/dt effect decline Advanced high cell density Trench technology
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Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=-250uA -30 --- --- V △BVDSS/△TJ BVDSS Temperature Coefficient Reference to 25℃ , ID=-1mA --- -0.014 --- V/℃ RDS(ON) Static Drain-Source On-Resistance2 VGS=-10V , ID=-3A --- 48 55 m VGS=-4.5V , ID=-3A --- 57 65 VGS=-2.5V , ID=-2A --- 75 85 VGS(th) Gate Threshold Voltage VGS=VDS , ID =-250uA -0.5 --- -1.2 V △VGS(th) VGS(th) Temperature Coefficient --- 2.6 --- mV/℃ IDSS Drain-Source Leakage Current VDS=-24V , VGS=0V , TJ=25℃ --- --- -1 uA VDS=-24V , VGS=0V , TJ=55℃ --- --- -5 IGSS Gate-Source Leakage Current VGS=±12V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=-5V , ID=-3A --- 5.6 --- S Qg Total Gate Charge (-4.5V) VDS=-15V , VGS=-4.5V , ID=-3A --- 11.9 --- nC Qgs Gate-Source Charge --- 1.8 --- Qgd Gate-Drain Charge --- 3 --- Td(on) Turn-On Delay Time VDD=-15V , VGS=-4.5V , RG=3.3, ID=-3A --- 6.6 --- ns Tr Rise Time --- 27.8 --- Td(off) Turn-Off Delay Time --- 46.2 --- Tf Fall Time --- 20.6 --- Ciss Input Capacitance VDS=-15V , VGS=0V , f=1MHz --- 920 --- pF Coss Output Capacitance --- 73 --- Crss Reverse Transfer Capacitance --- 71 --- Symbol Parameter Conditions Min. Typ. Max. Unit IS Continuous Source Current1,4 VG=VD=0V , Force Current --- --- -4.3 A VSD Diode Forward Voltage2 VGS=0V , IS=-1A , TJ=25℃ --- --- -1.2 V Note : 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The power dissipation is limited by 150℃ junction temperature 4.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Diode Characteristics PKN3601 P-Ch 30V Fast Switching MOSFETs www.paceleader.tw
Fig.1 Typical Output Characteristics Fig.2 On-Resistance vs. G-S Voltage Fig.3 Forward Characteristics Of Reverse diode Fig.4 Gate-Charge Characteristics Fig.5 Normalized VGS(th) vs. TJ Fig.6 Normalized RDSON vs. TJ PKN3601 P-Ch 30V Fast Switching MOSFETs www.paceleader.tw
0.0001 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Normalized Thermal Response (R θJA) PDM D = TON/T TJpeak = TC + PDM x RθJC TON T 0.02 0.01 0.05 0.1 0.2 DUTY=0.5 SINGLE PULSE Fig.8 Safe Operating Area Fig.9 Normalized Maximum Transient Thermal Impedance Fig.7 Capacitance Fig.10 Switching Time Waveform Fig.11 Gate Charge Waveform PKN3601 P-Ch 30V Fast Switching MOSFETs www.paceleader.tw
P-Ch 30V Fast Switching MOSFETs Package Information ( SOT-23 ) www.paceleader.tw