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N-Ch 100V Fast Switching MOSFETs 1 1 Symbol Parameter Rating Units VDS Drain-Source Voltage 100 V VGS Gate-Source Voltage ±20 V ID@TA=25℃ Continuous Drain Current, VGS @ 10V1 2 A ID@TA=70℃ Continuous Drain Current, VGS @ 10V1 1.6 A IDM Pulsed Drain Current2 4 A PD@TA=25℃ Total Power Dissipation3 1.5 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Symbol Parameter Typ. Max. Unit RθJA Thermal Resistance Junction-ambient(steady state)1 --- 135 ℃/W Thermal Resistance Junction-ambient(t<10s)1 --- 85 ℃/W BVDSS RDS ON ID V 152 m Ω A The PKN0014 is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications. The PKN0014 meet the RoHS and Green Pro duct requirement with full function reliability approved.  Green Device Available  Super Low Gate Charge  Excellent Cdv/dt effect decline  Advanced high cell density Trench technology

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Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250uA 100 --- --- V △BVDSS/△TJ BVDSS Temperature Coefficient Reference to 25℃ , ID=1mA --- 0.122 --- V/℃ RDS(ON) Static Drain-Source On-Resistance2 VGS=10V , ID=2A --- --- 152 m VGS=4.5V , ID=1A --- --- 158 m VGS(th) Gate Threshold Voltage VGS=VDS , ID =250uA 1.0 1.5 2.5 V △VGS(th) VGS(th) Temperature Coefficient --- -4.84 --- mV/℃ IDSS Drain-Source Leakage Current VDS=80V , VGS=0V , TJ=25℃ --- --- 10 uA VDS=80V , VGS=0V , TJ=55℃ --- --- 100 IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=5V , ID=2A --- 10.2 --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 2.3 4.6  Qg Total Gate Charge (10V) VDS=60V , VGS=10V , ID=2A --- 25.5 --- nC Qgs Gate-Source Charge --- 4.2 --- Qgd Gate-Drain Charge --- 4.3 --- Td(on) Turn-On Delay Time VDD=50V , VGS=10V , RG=3.3 ID=1A --- 17.3 --- ns Tr Rise Time --- 2.8 --- Td(off) Turn-Off Delay Time --- 50 --- Tf Fall Time --- 2.8 --- Ciss Input Capacitance VDS=15V , VGS=0V , f=1MHz --- 1077 --- pF Coss Output Capacitance --- 46 --- Crss Reverse Transfer Capacitance --- 32 --- Symbol Parameter Conditions Min. Typ. Max. Unit IS Continuous Source Current1,4 VG=VD=0V , Force Current --- --- 2 A VSD Diode Forward Voltage2 VGS=0V , IS=1A , TJ=25℃ --- --- 1.2 V Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Diode Characteristics Note : 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The power dissipation is limited by 150℃ junction temperature 4.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. PKN0014 N-Ch 100V Fast Switching MOSFETs www.paceleader.tw

VDS , Drain-to-Source Voltage (V) ID Drain Current (A) VGS=10V VGS=7V VGS=5V VGS=4.5V VGS=3V 115 120 125 130 4 6 8 10 VGS (V) RDSON (mΩ) ID =2A 0 0.3 0.6 0.9 1.2 VSD , Source-to-Drain Voltage (V) IS Source Current(A) TJ=150℃ TJ=25℃ 2.5 7.5 0 5 10 15 20 25 QG , Total Gate Charge (nC) VGS Gate to Source Voltage (V) VDS=60V ID=2A 0.2 0.6 1.4 1.8 -50 0 50 100 150 TJ ,Junction Temperature (℃ ) Normalized VGS(th) (V) Typical Characteristics Fig.1 Typical Output Characteristics Fig.2 On-Resistance vs. Gate-Source Voltage Fig.3 Forward Characteristics Of Reverse diode Fig.4 Gate-Charge Characteristics Fig.5 Normalized VGS(th) vs. TJ Fig.6 Normalized RDSON vs. TJ PKN0014 N-Ch 100V Fast Switching MOSFETs www.paceleader.tw

VDS , Drain to Source Voltage (V) Capacitance (pF) F=1.0MHz Ciss Coss Crss 0.01 0.10 1.00 10.00 0.01 0.1 1 10 100 VDS (V) ID (A) Tc=25oC Single Pulse 100ms 100us 10ms DC 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Normalized Thermal Response (RθJA) 0.01 0.05 0.1 0.2 DUTY=0.5 SINGLE PDM D = TON/T TJpeak = TC+PDMXRθJC TON T Td(on) Tr Ton Td(off) Tf Toff VDS VGS 90% 10% Fig.8 Safe Operating Area Fig.9 Normalized Maximum Transient Thermal Impedance Fig.7 Capacitance Fig.10 Switching Time Waveform Fig.11 Gate Charge Waveform PKN0014 N-Ch 100V Fast Switching MOSFETs www.paceleader.tw

N-Ch 100V Fast Switching MOSFETs Package Information ( SOT-23 ) www.paceleader.tw