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P-Ch 60V Fast Switching MOSFETs Symbol Parameter Rating Units VDS Drain-Source Voltage -60 V VGS Gate-Source Voltage ±20 V ID@TA=25℃ Continuous Drain Current, VGS @ -10V1 -2.3 A ID@TA=70℃ Continuous Drain Current, VGS @ -10V1 -1.8 A IDM Pulsed Drain Current2 -12 A PD@TA=25℃ Total Power Dissipation3 1.5 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Symbol Parameter Typ. Max. Unit RθJA Thermal Resistance Junction-Ambient 1 --- 85 ℃/W RθJC Thermal Resistance Junction-Case1 --- 48 ℃/W BVDSS RDS ON ID V m Ω 2.3 A The PKL6107 is the high cell density trenched P-ch MOSFETs, which provides excellent RDSON and efficiency for most of the small power switching and load switch applications. The PKL6107 meets the RoHS and Green Product requirement with full function reliability approved.  Super Low Gate Charge  100% EAS Guaranteed  Green Device Available  Excellent CdV/dt effect decline  Advanced high cell density Trench technology

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P-Ch 60V Fast Switching MOSFETs Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=-250uA -60 --- --- V △BVDSS/△TJ BVDSS Temperature Coefficient Reference to 25℃ , ID=-1mA --- -0.038 --- V/℃ RDS(ON) Static Drain-Source On-Resistance2 VGS(th) Gate Threshold Voltage VGS=VDS , ID =-250uA -1.5 -2.0 -2.5 V △VGS(th) VGS(th) Temperature Coefficient --- 4.92 --- mV/℃ IDSS Drain-Source Leakage Current VDS=-48V , VGS=0V , TJ=25℃ --- --- 1 uA VDS=-48V , VGS=0V , TJ=55℃ --- --- 5 IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=-5V , ID=-2A --- 5.3 --- S Qg Total Gate Charge (-10V) VDS=-48V , VGS=-10V , ID=-2A --- 8.3 11.6 nC Qgs Gate-Source Charge --- 1.8 2.52 Qgd Gate-Drain Charge --- 1.6 2.25 Td(on) Turn-On Delay Time VDS=-30V , VGS=-10V , RG=3.3, ID=-2A --- 4.1 8.2 ns Tr Rise Time --- 21 38 Td(off) Turn-Off Delay Time --- 20.3 40.6 Tf Fall Time --- 21 42 Ciss Input Capacitance VDS=-15V , VGS=0V , f=1MHz --- 428 600 pF Coss Output Capacitance --- 39 55 Crss Reverse Transfer Capacitance --- 26 36.4 Symbol Parameter Conditions Min. Typ. Max. Unit IS Continuous Source Current1,4 VG=VD=0V , Force Current --- --- -2.3 A ISM Pulsed Source Current2,4 --- --- -12 A VSD Diode Forward Voltage2 VGS=0V , IS=-1A , TJ=25℃ --- --- -1.2 V Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Diode Characteristics Note : 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The power dissipation is limited by 150℃ junction temperature 4.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. PKL6107 www.paceleader.tw

P-Ch 60V Fast Switching MOSFETs Typical Characteristics Fig.1 Typical Output Characteristics Fig.2 On-Resistance vs. Gate-Source Voltage Fig.3 Forward Characteristics Of Reverse diode Fig.4 Gate-Charge Characteristics Fig.5 Normalized VGS(th) vs. TJ Fig.6 Normalized RDSON vs. TJ PKL6107 www.paceleader.tw

P-Ch 60V Fast Switching MOSFETs 0.01 0.10 1.00 10.00 100.00 0.01 0.1 1 10 100 1000 -VDS (V) -ID (A) TA=25oC Single Pulse 100ms 100us 1ms 10ms DC 0.0001 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Normalized Thermal Response (R θJA) PDM D = TON/T TJpeak = TA + PDM x RθJA TON T 0.02 0.01 0.05 0.1 0.2 DUTY=0.5 SINGLE PULSE Fig.8 Safe Operating Area Fig.9 Normalized Maximum Transient Thermal Impedance Fig.7 Capacitance Fig.10 Switching time waveform Fig.11 Gate Charge waveform PKL6107 www.paceleader.tw

P-Ch 60V Fast Switching MOSFETs Package Information ( SOT-223 ) www.paceleader.tw