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P-Ch 30V Fast Switching MOSFETs 1 1 Symbol Parameter Rating Units VDS Drain-Source Voltage -30 V VGS Gate-Source Voltage ±20 V ID@TA=25℃ Continuous Drain Current, VGS @ -10V1 -4.5 A ID@TA=70℃ Continuous Drain Current, VGS @ -10V1 -3.5 A IDM Pulsed Drain Current2 -23 A PD@TA=25℃ Total Power Dissipation3 1.5 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Symbol Parameter Typ. Max. Unit RθJA Thermal Resistance Junction-Ambient 1 --- 85 ℃/W RθJC Thermal Resistance Junction-Case1 --- 48 ℃/W BVDSS RDSON ID -30V 52mΩ -4.5A The PKL3101 is the high cell density trenched P-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications. The PKL3101 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved.  100% EAS Guaranteed  Green Device Available  Super Low Gate Charge  Excellent CdV/dt effect decline  Advanced high cell density Trench technology

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P-Ch 30V Fast Switching MOSFETs Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=-250uA -30 --- --- V △BVDSS/△TJ BVDSS Temperature Coefficient Reference to 25℃ , ID=-1mA --- -0.023 --- V/℃ RDS(ON) Static Drain-Source On-Resistance2 VGS=-10V , ID=-4A --- 42 52 VGS=-4.5V , ID=-3A --- 75 90 VGS(th) Gate Threshold Voltage VGS=VDS , ID =-250uA -1.2 -1.6 -2.5 V △VGS(th) VGS(th) Temperature Coefficient --- 4 --- mV/℃ IDSS Drain-Source Leakage Current VDS=-24V , VGS=0V , TJ=25℃ --- --- -1 uA VDS=-24V , VGS=0V , TJ=55℃ --- --- -5 IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=-5V , ID=-4A --- 11 --- S Qg Total Gate Charge (-4.5V) VDS=-15V , VGS=-4.5V , ID=-4A --- 6.4 9.0 nC Qgs Gate-Source Charge --- 2.3 3.2 Qgd Gate-Drain Charge --- 1.9 2.7 Td(on) Turn-On Delay Time VDD=-15V , VGS=-10V , RG=3.3, ID=-4A --- 2.8 5.6 ns Tr Rise Time --- 8.4 15.1 Td(off) Turn-Off Delay Time --- 39 78.0 Tf Fall Time --- 6 12.0 Ciss Input Capacitance VDS=-15V , VGS=0V , f=1MHz --- 583 816 pF Coss Output Capacitance --- 100 140 Crss Reverse Transfer Capacitance --- 80 112 Symbol Parameter Conditions Min. Typ. Max. Unit IS Continuous Source Current1,4 VG=VD=0V , Force Current --- --- -4.5 A ISM Pulsed Source Current2,4 --- --- -23 A VSD Diode Forward Voltage2 VGS=0V , IS=-1A , TJ=25℃ --- --- -1.2 V trr Reverse Recovery Time IF=-4A , dI/dt=100A/µs , TJ=25℃ --- 7.8 --- nS Qrr Reverse Recovery Charge --- 2.5 --- nC Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Diode Characteristics Note : 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The power dissipation is limited by 150℃ junction temperature 4.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. PKL3101 www.paceleader.tw

P-Ch 30V Fast Switching MOSFETs 100 2 4 6 8 10 -VGS (V) RDSON (mΩ) ID=-4A 0 0.2 0.4 0.6 0.8 1 -VSD , Source-to-Drain Voltage (V) -IS -Source Current(A) TJ=150℃ TJ=25℃ 0.5 1.5 -50 0 50 100 150 TJ ,Junction Temperature (℃) Normalized VGS(th) 0.5 1.0 1.5 2.0 -50 0 50 100 150 TJ , Junction Temperature (℃) Normalized On Resistance Typical Characteristics Fig.1 Typical Output Characteristics Fig.2 On-Resistance v.s Gate-Source Voltage Fig.3 Forward Characteristics Of Reverse diode Fig.4 Gate Charge Characteristics Fig.5 Normalized VGS(th) v.s TJ Fig.6 Normalized RDSON v.s TJ PKL3101 www.paceleader.tw

P-Ch 30V Fast Switching MOSFETs 4 4 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Normalized Thermal Response (RθJA) 0.01 0.05 0.1 0.2 DUTY=0.5 SINGLE PDM D = TON/T TJpeak = TC+PDMXRθJC TON T Fig.8 Safe Operating Area Fig.9 Normalized Maximum Transient Thermal Impedance Fig.7 Capacitance Fig.10 Switching Time Waveform Fig.11 Gate Charge Waveform PKL3101 www.paceleader.tw

P-Ch 30V Fast Switching MOSFETs Package Information ( SOT-223 ) www.paceleader.tw