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N-Ch 100V Fast Switching MOSFETs Symbol Parameter Rating Units VDS Drain-Source Voltage 100 V VGS Gate-Source Voltage ±20 V ID@TA=25℃ Continuous Drain Current, VGS @ 10V1 6 A ID@TA=70℃ Continuous Drain Current, VGS @ 10V1 4.7 A IDM Pulsed Drain Current2 24 A EAS Single Pulse Avalanche Energy3 11.3 mJ IAS Avalanche Current 15 A PD@TA=25℃ Total Power Dissipation4 1.5 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Symbol Parameter Typ. Max. Unit RθJA Thermal Resistance Junction-ambient 1(Steady State) --- 70 ℃/W Thermal Resistance Junction-ambient 1(t≦10s) --- 35 ℃/W BVDSS RDSON ID 100V 47mΩ 6A The PKL0016 is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications. The PKL0016 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved.  Green Device Available  Super Low Gate Charge  Excellent Cdv/dt effect decline  Advanced high cell density Trench technology

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N-Ch 100V Fast Switching MOSFETs Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250uA 100 --- --- V △BVDSS/△TJ BVDSS Temperature Coefficient Reference to 25℃ , ID=1mA --- 0.098 --- V/℃ RDS(ON) Static Drain-Source On-Resistance2 VGS=10V , ID=5A --- --- 47 VGS=4.5V , ID=5A --- --- 50 VGS(th) Gate Threshold Voltage VGS=VDS , ID =250uA 1.2 --- 2.5 V △VGS(th) VGS(th) Temperature Coefficient --- -5.52 --- mV/℃ IDSS Drain-Source Leakage Current VDS=80V , VGS=0V , TJ=25℃ --- --- 10 uA VDS=80V , VGS=0V , TJ=55℃ --- --- 100 IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=5V , ID=5A --- 6.2 --- S Qg Total Gate Charge (10V) VDS=80V , VGS=10V , ID=5A --- 60 --- nC Qgs Gate-Source Charge --- 9.2 --- Qgd Gate-Drain Charge --- 9.9 --- Td(on) Turn-On Delay Time VDD=50V , VGS=10V , RG=3.3 ID=3A --- 10.8 --- ns Tr Rise Time --- 27 --- Td(off) Turn-Off Delay Time --- 56 --- Tf Fall Time --- 24 --- Ciss Input Capacitance VDS=15V , VGS=0V , f=1MHz --- 3848 --- pF Coss Output Capacitance --- 137 --- Crss Reverse Transfer Capacitance --- 82 --- Symbol Parameter Conditions Min. Typ. Max. Unit IS Continuous Source Current1,5 VG=VD=0V , Force Current --- --- 6 A ISM Pulsed Source Current2,5 --- --- 24 A VSD Diode Forward Voltage2 VGS=0V , IS=1A , TJ=25℃ --- --- 1.2 V trr Reverse Recovery Time IF=5A , dI/dt=100A/µs , TJ=25℃ --- 25 --- nS Qrr Reverse Recovery Charge --- 29 --- nC Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Diode Characteristics Note : 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH,IAS=15A 4.The power dissipation is limited by 150℃ junction temperature 5.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. PKL0016 www.paceleader.tw

N-Ch 100V Fast Switching MOSFETs 3 3 0 0.2 0.4 0.6 0.8 1 VDS , Drain-to-Source Voltage (V) ID Drain Current (A) VGS=10V VGS=7V VGS=5V VGS=4.5V V GS =3V VSD , Source-to-Drain Voltage (V) IS Source Current(A) TJ=150℃ TJ=25℃ 0.2 0.6 1.4 1.8 -50 0 50 100 150 TJ ,Junction Temperature (℃ ) Normalized VGS(th) (V) Typical Characteristics Fig.1 Typical Output Characteristics Fig.2 On-Resistance vs. Gate-Source Voltage Fig.3 Forward Characteristics Of Reverse diode Fig.4 Gate-Charge Characteristics Fig.5 Normalized VGS(th) vs. TJ Fig.6 Normalized RDSON vs. TJ PKL0016 www.paceleader.tw

N-Ch 100V Fast Switching MOSFETs 100 1000 10000 1 5 9 13 17 21 25 VDS , Drain to Source Voltage (V) Capacitance (pF) F=1.0MHz Ciss Coss Crss 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Normalized Thermal Response (RθJA) 0.01 0.05 0.1 0.2 DUTY=0.5 SINGLE PDM D = TON/T TJpeak = TC+PDMXRθJC TON T Td(on) Tr Ton Td(off) Tf Toff VDS VGS 90% 10% IAS VGS BVDSS VDD EAS=

2 L x IAS

Fig.8 Safe Operating Area Fig.9 Normalized Maximum Transient Thermal Impedance Fig.7 Capacitance Fig.10 Switching Time Waveform Fig.11 Unclamped Inductive Switching Waveform PKL0016 www.paceleader.tw

N-Ch 100V Fast Switching MOSFETs Package Information ( SOT-223 ) www.paceleader.tw