PKC-136 STMICROELECTRONICS | Alldatasheet

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August 2001 - Ed: 2A PEAK CLAMP n Accurate voltage clamping regardless load n Reduced current loop n Reduced EMI emission n High integration n Fast assembly n Reduced losses in stand by mode BENEFITS n Protection of the Mosfet in flyback power supply n TRANSIL™ and blocking diode in a single package

FEATURES

Symbol Parameter Value Unit Tstg Storage temperature - 40 to + 150 °C Tj Junction temperature 150 °C P Maximum power dissipation T°lead = 90°C 1.5 W ABSOLUTE MAXIMUM RATINGS (limiting values) VBR 160Vdc VDRM 700Vdc P 1.5W MAIN PRODUCT CHARACTERISTICS DO-15 Application Specific Discretes ASD™ Vo IoLf T D BASIC CONNECTION

Symbol Parameter Tests conditions Value Unit Min. Typ. Max. IR Reverse leakage current VR =V RRM Tj= 25°C 3 µA Tj= 125°C 32 0 VRRM Repetitive Peak Reverse Voltage Tj= 25°C 700 V trr Reverse Recovery Time IF =1 A d IF / dt = -50A/µs VR = 30V 45 ns VFP Peak Forward Voltage IF =3 A dIF / dt = 100A/µs Tj= 25°C 12 V Tj= 125°C 18 ELECTRICAL CHARACTERISTICS DIODE (Tj = 25°C unless otherwise specified) Symbol Parameter Test conditions Value Unit Min. Typ. Max. IRM Leakage current V R = 136V Tj= 25°C 1 µA Tj=125°C 10 VBR Breakdown voltage I R = 1mA pulse test < 50ms Tj= 25°C 150 160 170 V R d Dynamical Resistance tp < 500ns between I = 0.5Amps and I = 1.5Amps Tj= 125°C 4 Ω α T Temperature Coefficient 10.8 10 -4/°C VsCL Surge Clamping voltage Ipp = 2.7Amps 10/1000µs 219 V ELECTRICAL CHARACTERISTICS TRANSIL In repetitive mode and for low current rating, use the equation (1) and (2) to calculate the breakdown voltage VBR of the transil versus the operating junction temperature and use the equation (3) to calculate the clamping voltage versus the transil current Ipp and the temperature. ΔVT TV CBR j BR=− °α () ( )25 25 (1) VT V C VBR j BR BR() ( )=° + 25 Δ (2) V T V T Rd IppCL j BR j() () .=+ (3) CALCULATION OF THE CLAMPING VOLTAGE: Symbol Parameter Typical Value Unit C Total Parasitic capacitance 1MHz 30mV 35 pF CAPACITANCE

1.E-01 1.E+00 1.E+01 1.E+02 tp(ms) Tj initial=25°C Pp(kW) Fig. 1:Peak pulse power versus exponential pulse duration. 100 110 0 25 50 75 100 125 150 175 Tj(°C) Fig. 2:Relative variation of peak pulse power versus initial junction temperature. Symbol Parameter Value Unit R th(j-l) Junction to leads L = 10mm 40 °C/W R th(j-a) Junction to ambiant condition see note 1 105 °C/W Note 1:Device mounted on a epoxy FR4 board of 35µm thickness Lead Length: 10mm Pad diameter: 4mm Track width: 1mm Track length: 25mm The Rth (j-a)can be reduced by replacing the Cu track by plan: S(Cu) = 1.5cm2/lead R th(j-a)= 65°C/W S(Cu) = 3.5cm2/lead R th(j-a)= 60°C/W THERMAL RESISTANCES 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0 25 50 75 100 125 150 Tamb(°C) Tamb=Tleads Printed circuit board P(W) Fig. 3:Average power dissipation versus ambient temperature. 1.0 10.0 100.0 1000.0 Zth(j-a) (°C/W) Free air tp(s) Fig. 4:Variation of thermal impedance junction to ambient versus pulse duration (printed circuit board epoxy FR4)

S(cm²) Lleads=10mm Rth(j-a) Fig. 5:Thermal resistance junction to ambient versus copper surface under each lead. 1.E-06 1.E-05 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 10 20 30 40 50 60 70 80 90 100 110 120 130 140 150 VR(V) Tj=100°C Tj=125°C Tj=25°C Tj=150°C IR(µA) Fig. 6-1:Reverse leakage current versus reverse voltage applied (typical values, for Transil). 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 0 50 100 150 200 250 300 350 400 450 500 550 600 650 700 VR(V) Tj=100°C Tj=125°C Tj=25°C Tj=150°C IR(µA) Fig. 6-2:Reverse leakage current versus reverse voltage applied (typical values, for diode). 0 50 100 150 200 250 300 350 400 450 500 dIF/dt(A/µs) IF=3A Tj=125°C V (V)FP Fig. 7:Transient peak forward voltage versus dIF/dt (90% confidence). 0.1 1.0 10.0 160 165 170 175 180 185 190 195 200 205 210 215 220 Vcl(V) tp<500ns Tj=25°C Tj=125°C Ipp(A) Fig. 8: Clamping voltage versus peak pulse current (maximum values). 100 1 10 100 1000 VR(V) F=1MHz Vosc=30mV RMS Tj=25°C C(pF) Fig. 9: Junction capacitance versus reverse voltage applied on clamping characteristic (typical values).

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written ap- proval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics © 2001 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com PACKAGE MECHANICAL DATA DO-15 REF. DIMENSIONS Millimeters Inches Min. Max. Min. Max. A 6.05 6.75 0.238 0.266 B 2.95 3.53 0.116 0.139 C 26 31 1.024 1.220 D 0.71 0.88 0.028 0.035 A CC D B Ordering type Marking Package Weight Base qty Delivery mode PKC136 Partnumber Diode cathode ring DO-15 0.4g 1000 Ammopack PKC136-RL Partnumber Diode cathode ring DO-15 0.4g 6000 Tape and reel