PJ04N03D

PJ04N03D PANJIT | Alldatasheet

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PAGE . 1December 10,2009-REV.00 PJ04N03D TO-252FEATURES

• RDS(ON),VGS@10V,I DS@30A=4mΩ
• RDS(ON),VGS@5.0V,I DS@24A=6mΩ
• Advanced trench proce ss technology
• High Density Cell Design For Uitra Low On-Resistance
• Specially Designed for DC/DC Converters and Motor Drivers
• Fully Chara cterized Avalanche Voltage and Current
• In compliance with EU RoHS 2002/95/EC directives MECHANICAL DATA
• Case : TO-252 Molded Plastic
• Terminals : Solderable per MIL-STD-750,Method 2026
• Marking : 04N03D 25V N-Cha nnel Enha ncement Mode Field Effect T ransistor S D G D G S PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE Maximum RATINGS and Thermal Characteristics (TA=25OC unless otherwise noted ) PARAMETER Symbol Limits Units Drain-Source Voltage VDS 25 V Gate-Source Voltage VGS +20 V Continous Drain Current TC=25oC I D 80 A Pulsed Drain Current (1) I DM 220 A Avalanche Energy L=0. 1mH,I D=53A,VDD=25V EAS 140 mJ Power Dissipation TC=25oC PD 100 W TC=75oC 66 Ope rating Junction and Stroage T emperature Range TJ,TSTG -55 to +175 oC Junction-to-Case RΘ JC 1.5 oC Junction-to-Ambient RΘ JA 50 NO TE : Pulse width limited by maximum junction temperature

PAGE . 2 PJ04N03D ELECTRICAL CHARACTERISTICS (TA=25oC,Unless Otherwise Noted) NOTE : Plus Test: Pluse Width < 300us, Duty Cycle < 2%. VDD VOUT VIN RG RL Switching Test□Circuit Gate□Charge Test□Circuit VDD VGS RG RL 1mA PA RA ME TE R S YM B OL TE S T C OND ITIO NS MIN. TYP. MA X . UNIT S TATIC D ra i n-S o urc e B re a k d o wn Vo lta g e V ( B R)D S S V GS =0 V,I D =2 5 0µ A 2 5 - - V Ga te Thre s ho ld Vo lta g e V GS (TH) V D S=V GS , I D =2 5 0µ A 1 - 3 V D ra i n-S o urc e On- s ta te Re s i s t a nc e RD S ( ON) V GS =1 0 V, I D =3 0 A - 3 .6 4 .0 m Ω V GS = 5 V,I D = 2 4 A - 4 .8 6 .0 m Ω Ga te -B o d y L e a k a g e I GS S V D S= 0 V,VGS =+ 2 0 V - - + 1 0 0 nA Ze r o Ga te Vo lta g e D ra i n C urre nt I D S S V D S=2 0 V,V GS =0 V - - 1 µ A V D S=2 0 V,V G S=0 V,T J =1 2 5o C - - 2 5 µ A On-S ta te D r a i n C ur re nt I D ( ON) V D S= 1 0 V,VGS =1 0 V 6 5 - - A F o rwa rd Tra ns c o nd uc ta nc e g fs V D S= 5 V,I D = 2 4 A 1 5 - - S D YNA M IC To t a l Ga te C ha r g e QG V D S=1 5 V ,VG S=5 V,I D =3 0 A - 2 6 .4 - nC V D S=1 5 V ,VGS =1 0 V I D =3 0 A - 5 8 .2 - nC Ga te -S o ur c e C ha rg e QGS - 5 .4 - nC Ga te -D ra i n C ha rg e QG D - 11 .6 - nC Tur n- On D e la y Ti me t d (o n) V D S=1 5 V , I D =1 A ,V GS =1 0 V RGS = 3 .6Ω - 1 7 .6 2 2 nS Ri s e Ti me tr - 11 .8 1 8 nS Tur n- Off D e la y Ti me td ( o f f) - 4 8 .6 7 2 nS F a ll Ti me tf - 1 9 .2 2 6 nS Inp ut C a p a c i ta nc e C IS S V GS =0 V,V D S=1 5 V f=1 MHz - 2 9 5 0 - p F Outp ut C a p a c i ta nc e C O S S - 5 2 0 - p F Re ve rs e Tra ns fe r C a p a c i t a nc e C RS S - 4 3 0 - p F Ga te Re s i s t a nc e Rg V GS =1 5 m V, V D S=0 V,f =1 M Hz - 1 .2 - Ω S o ur c e - D r a i n D i o d e C o nt i nuo us C ur re nt I S - - 80 A F o rwa rd Vo lta g e V S D I F =3 0 A ,VGS =0 V - - 1.3 V December 10,2009-REV.00

Fig.1 Output Characteristric PJ04N03D Typical Characteristics Curves ( Ta=25℃℃ ℃℃, unl ess otherwise noted) Fig.2 Transfer Characteristric 0 1 2 3 4 5 ID - Drain-to-Source Current (A) VDS - Drain-to-Source Voltage (V) VGS= 4.5V, 5.0V, 6.0V, 10.0V 2.5V 3.0V 3.5V 4.0V 1 1 .5 2 2.5 3 3.5 4 4.5 ID - Drain Source Current (A) VGS - Gate-to-Source Voltage (V) VDS =10V - 55oC TJ = 125oC 25oC 0 10 2 0 30 40 50 60 70 80 90 RDS(ON) - On-Resistance (mΩΩΩΩ ) ID - Drain Current (A) VGS = 5.0V VGS = 10V 2 4 6 8 10 RDS(ON) - On-Resistance (mΩΩΩΩ ) VGS - Gate-to-Source Voltage (V) ID =30A TJ =25oC 125oC Fig.1 Output Characteristric PJ04N03D Typical Characteristics Curves ( Ta=25℃℃ ℃℃, unl ess otherwise noted) Fig.2 Transfer Characteristric Fig.3 On Resistance vs Drain Current Fig.4 On Resistance vs Gate to Source Voltage Fig.5 On Resistance vs Junction Temperature Fig.6 Capacitance PAGE. 0 1 2 3 4 5 ID - Drain-to-Source Current (A) VDS - Drain-to-Source Voltage (V) VGS= 4.5V, 5.0V, 6.0V, 10.0V 2.5V 3.0V 3.5V 4.0V 1 1 .5 2 2.5 3 3.5 4 4.5 ID - Drain Source Current (A) VGS - Gate-to-Source Voltage (V) VDS =10V - 55oC TJ = 125oC 25oC 0.6 0.8 1.2 1.6 1.8 -50 -25 0 25 50 75 100 125 150 175 RDS(ON) - On-Resistance (Normalized) TJ - Junction Temperature (oC) VGS =10 V ID =30 A 0 10 2 0 30 40 50 60 70 80 90 RDS(ON) - On-Resistance (mΩΩΩΩ ) ID - Drain Current (A) VGS = 5.0V VGS = 10V 2 4 6 8 10 RDS(ON) - On-Resistance (mΩΩΩΩ ) VGS - Gate-to-Source Voltage (V) ID =30A TJ =25oC 125oC 500 1000 500 2000 2500 3000 3500 4000 0 5 10 15 20 25 C - Capacitance (pF) VDS - Drain-to-Source Voltage (V) Ciss f = 1MHz VGS = 0V Coss Crss December 10,2009-REV.00

Fig. 7 Gate Charge Waveform PJ04N03D Typical Characteristics Curves ( Ta=25℃℃ ℃℃, unle ss otherwise noted) Fig.8 Source-Drain Diode Forward Voltage 0 10 20 3 0 40 50 60 VGS - Gate-to-Source Voltage (V) Qg - Gate Charge (nC) VDS =15 V ID =30A 0.1 100 0 0. 2 IS - Source Current (A) VSD - Source-to-Drain Voltage (V) TJ = 125oC 25oC VGS = 0V -55oC 0.6 0.7 0.8 0.9 1.2 -50 -25 0 25 50 75 100 125 150 175 Vth - G-S Threshold Voltage (Normalized) TJ - Junction Temperature (oC) ID =250µ A 0.8 0.9 1.1 1.2 -50 -25 0 25 50 75 100 125 150 175 BVDSS -Breakdown Voltage(Normalized) TJ -Junction Temperature (oC) ID = 250µ A Fig. 7 Gate Charge Waveform PJ04N03D Typical Characteristics Curves ( Ta=25℃℃ ℃℃, unle ss otherwise noted) Fig.8 Source-Drain Diode Forward Voltage Fig.9 Breakdown Voltage vs Junction Temperature PAGE. 4 Fig.10 Threshold Voltage vs Junction Temperature 0 10 20 3 0 40 50 60 VGS - Gate-to-Source Voltage (V) Qg - Gate Charge (nC) VDS =15 V ID =30A 0.1 100 0 0. 2 IS - Source Current (A) VSD - Source-to-Drain Voltage (V) TJ = 125oC 25oC VGS = 0V -55oC 0.6 0.7 0.8 0.9 1.2 -50 -25 0 25 50 75 100 125 150 175 Vth - G-S Threshold Voltage (Normalized) TJ - Junction Temperature (oC) ID =250µ A 0.8 0.9 1.1 1.2 -50 -25 0 25 50 75 100 125 150 175 BVDSS -Breakdown Voltage(Normalized) TJ -Junction Temperature (oC) ID = 250µ A December 10,2009-REV.00

PAGE . 5 PJ04N03D MOUNTING PAD LAYOUT

• Pa cking inf ormation T/R - 3K per 13" pla stic Reel ORDER INFORMATION LEGAL STATEMENT Copyright PanJit International, Inc 2009 The information presented in this document is believed to be a ccurate and reliable. The specifications and information herein are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit does not convey any license under its patent rights or rights of others. December 10,2009-REV.00