PIE AITSEMI | Alldatasheet

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AiT Semiconductor Inc. www.ait-ic.com POWER INDUCTOR PIE

  • FEATURE 1. Multilayer Chip Power Inductor 2. Monolithic structure for high reliability 3. Excellent solderability and high heat resistance 4. No cross coupling due to magnetic shield 5. High DC bias current due to developed material 6. Low DC resistance 7. Operating Temp.: -40°C~+125°C
  • APPLICATION 1. DC-DC converter circuits for mobile phones, wearable devices, DVCs, HDDs, etc.
  • ORDERING INFORMATION PIE2012 -2R2 T PN Inductance M:±20%
  • SHAPE AND DIMENSION Unit: mm [inch] Type L W T a PIE2012 [0805] 2.0 (+0.3, -0.1) 1.25±0.2 [.049±.008] 0.85±0.2 [.033±.008] 0.5±0.3 [.020±.012] PIE2016 [0806] 2.0 (+0.3, -0.1) 1.6±0.2 [.063±.008] 0.9±0.1 [.035±.004] 0.5±0.3 [.020±.012] PIE2520 [1008] 2.5±0.2 [.098±.008] 2.0(+0.3, -0.1) 0.9±0.1 [.035±.004] 0.5±0.3 [.020±.012]

AiT Semiconductor Inc. www.ait-ic.com POWER INDUCTOR PIE

  • ELECTRICAL CHARACTERISTICS PIE2012 TYPE Part Number Inductance L(μH) Test Freq. f(MHz) DC Resistance DCR(Ω) Self-resonant Frequency Min. SRF(MHz) Saturation Current Typ. Isat(mA) Heat Rating Current Max. Irms(mA) PIE2012-2R2M 2.2 1 0.18±25% 50 300 1300 PIE2012-4R7M 4.7 1 0.30±25% 60 180 850 PIE2016 TYPE Part Number Inductance L(μH) Test Freq. f(MHz) DC Resistance DCR(Ω) Self-resonant Frequency Min. SRF(MHz) Saturation Current Typ. Isat(mA) Heat Rating Current Max. Irms(mA) PIE2016-1R0M 1.0 1 0.14±25% 120 900 1100 PIE2016-2R2M 2.2 1 0.22±25% 70 600 850 PIE2520 TYPE Part Number Inductance L(μH) Test Freq. f(MHz) DC Resistance DCR(Ω) Self-resonant Frequency Min. SRF(MHz) Saturation Current Typ. Isat(mA) Heat Rating Current Max. Irms(mA) PIE2520-2R2M 2.2 1 0.13±25% 70 500 1400 PIE2520-4R7M 4.7 1 0.28±25% 45 250 950 ※Rated current: Isat or Irms, whichever is smaller; ※Isat: DC current at which the inductance drops approximate 30% from its value without current; ※Irms: DC current that causes the temperature rise (ΔT =40°C) from 20°C ambient.