PI3EQX1002B1

Features

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Technical content

Features

ÎÎ 5 & 10Gbps serial link with linear equalizer. ÎÎ USB3.1 and USB3.0 Compatible ÎÎ Full Compliancy to USB3.1 Super Speed Standard ÎÎ Two 10Gbps differential signal pairs ÎÎ Pin Adjustable Receiver Equalization ÎÎ Pin Adjustable output linear swing ÎÎ Pin Adjustable Flat Gain ÎÎ 100Ω Differential CML I/O’s ÎÎ Automatic Receiver Detect ÎÎ Auto "Slumber" mode for adaptive power management ÎÎ Single Supply Voltage: 3.3V ÎÎ Industrial Temperature Range: -40 oC to 85oC ÎÎ Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) ÎÎ Halogen and Antimony Free. “Green” Device (Note 3) ÎÎ For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://www.diodes.com/quality/product-definitions/ ÎÎ Packaging: ΍ 30-pin, TQFN 2.5x4.5 mm (ZL30)

Description

The PI3EQX1002B1 is a low power, high performance 10.0 Gbps 1-Port USB 3.1 linear ReDriver™ designed specifically for the USB 3.1 protocol. The device provides programmable equalization, linear swing and flat gain to optimize performance over a variety of physical mediums by reducing Inter-Symbol Interference. PI3EQX1002B1 supports two 100Ω Differential CML data I/O’s between the Protocol ASIC to a switch fabric, over cable, or to extend the signals across other distant data pathways on the user’s platform. The integrated equalization circuitry provides flexibility with signal integrity of the signal before the ReDriver. Each channel operates fully independently. The channels’ input signal level de - termines whether the output is active. The PI3EQX1002B1 also includes an automatic receiver detect function. The receiver detection loop will be active again if the corresponding channel’s signal detector is idle for longer than 7.3mS. The channel will then move to Unplug Mode if load not detected, or it will return to Low Power Mode (Slumber Mode) due to inactivity. Block Diagram Figure 1 USB 3.0 Cable Smart Phone External Storage Device PC Monitor Tablet PC Pericom USB 3.1 ReDriver Notebook Pericom USB 3.1 ReDriver PI3EQX1002B1 1-Port USB3.1 Gen-2 ReDriver A product Line of Diodes IncorporatedbP Lead-free Green Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. ReDriver is a trademark of Diodes Incorporated.

www.diodes.com December 2019 Diodes Incorporated PI3EQX1002B1 Document Number DS40592 Rev 3-2 Pin Description Pin # Pin Name Ty pe Description 1, 10, 16, 25 VDD Power 3.3V power supply, +/-0.3V 27, FGA FGB Input The DC flat gain selection. 4-level input pins. With internal 100KΩ pull-up resistor and 200kΩ pull-down resistor. 29, SWA SWB Input The Output Swing selection. 4-level input pins. With internal 100KΩ pull-up resis - tor and 200kΩ pull-down resistor. 26, EQA EQB Input The EQ selection. 4-level input pins. With internal 100KΩ pull-up resistor and 200kΩ pull-down resistor. 2, 3 17, 18 AIP , AIN BIP, BIN Input CML input terminals. With selectable input termination between 50Ω to VDD, 67kΩ to VbiasRx or 67kΩ to GND. 24, 23 9, 8 AOP, AON BOP, BON Output CML output terminals. With selectable output termination between 50Ω to VDD, 6kΩ to VDD, 6kΩ to VbiasTx or Hi-Z

11 RXDET_EN Input

Receiver detection Enable pin. With internal 300kΩ pull-up resistor. “High” – Receiver detection is enabled. “Low” – Receiver detection is disabled.

30 EN Input

Channel Enable. With internal 300kΩ pull-up resistor. “High” – Channel is in normal operation. “Low” – Channel is in power down mode. 20, 21, 22, 28, Center Pad GND GND Supply Ground Pin Diagram (30-pin, TQFN 2.5x4.5mm) ZL30 RXDET_EN SWB AIP VDD AIN 1211 161514 252627282930 GND GND GND BON GND BOP VDD GND FGB EQB AOP VDD AON GND GND GND BIN GND BIP VDD EN SWA GND FGA EQA GND

www.diodes.com December 2019 Diodes Incorporated PI3EQX1002B1 Document Number DS40592 Rev 3-2 Power Management Notebooks, netbooks, and other power sensitive consumer devices require judicious use of power in order to maximize battery life. In order to minimize the power consumption of our devices, Diodes has added an additional adaptive power management feature. When a signal detector is idle for longer than 1.3ms, the corresponding channel will move to low power mode ONLY. (It means both channels will move to low power mode individually). In the low power mode, the signal detector will still be monitoring the input channel. If a channel is in low power mode and the input signal is detected, the corresponding channel will wake-up immediately. If a channel is in low power mode and the signal detector is idle longer than 6ms, the receiver detection loop will be active again. If load is not detected, then the Channel will move to Device Unplug Mode and monitor the load continuously. If load is detected, it will return to Low Power Mode and receiver detection will be active again per 6ms. Operating Modes Mode RIN ROUT PD 67kΩ to GND HIZ Unplug Mode 67kΩ to VbiasRx 6kΩ to VbiasTx Deep Slumber Mode 50Ω to Vdd 6kΩ to VbiasTx Slumber Mode 50Ω to Vdd 6kΩ to Vdd Active Mode 50Ω to Vdd 50Ω to Vdd

www.diodes.com December 2019 Diodes Incorporated PI3EQX1002B1 Document Number DS40592 Rev 3-2 Equalization Setting: EQA/B are the selection pins for the equalization selection Equalizer setting (dB) EQA/B @2.5GHz @5GHz 0 (Tie 1KΩ to GND) 6.7 12.4 R (Tie 68KΩ to GND) 3.5 8.0 F (Leave Open) 5.3 10.6 1 (Tie 1KΩ to VDD) 8.4 14.6 Flat Gain Setting: FGA/B are the selection pins for the DC gain Flat Gain Settings FGA/B dB 0 (Tie 1KΩ to GND) -1.6 R (Tie 68KΩ to GND) -0.5 F (Leave Open) 1.0 1 (Tie 1KΩ to VDD) 2.7 -1dB compression point linear Swing Setting: SWA/B are the selection pins for the output linear swing setting Output Linear Swing Settings SWA/B mVppd 0 (Tie 1KΩ to GND) 800 R (Tie 68KΩ to GND) 1200 F (Leave Open) 1000 (Default) 1 (Tie 1KΩ to VDD) 1100 Channel Enable Setting: EN is the channel enable pin Channel Enable Setting EN Setting

0 Disabled

1 Enabled (Default)

Receiver Detection Setting: RXDET_EN is the receiver detection pin Receiver Detection Setting RXDET_EN Setting

www.diodes.com December 2019 Diodes Incorporated PI3EQX1002B1 Document Number DS40592 Rev 3-2 Note: Stresses greater than those listed under MAXIMUM RAT - INGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Ex - posure to absolute maximum rating conditions for extended periods may affect reliability. Maximum Ratings (Above which useful life may be impaired. For user guidelines, not tested.) Control Pin Specifications (VDD = 3.3 ± 0.3V TA = -40oC to 85oC ) Symbol Parameter Min. Ty p. Max. Units 2-level control pins VIH DC input logic High VDD*0.65 V VIL DC input logic Low VDD*0.35 V IIH Input High current 25 uA IIL Input Low current -25 uA 4-level control pins V IH DC input logic "High" 0.92*VDD VDD V VIF DC input logic "Float" 0.59*VDD 0.67*VDD 0.75*VDD V VIR DC input logic "With Rext to GND" 0.25*VDD 0.33*VDD 0.41*VDD V VIL DC input logic "Low" GND 0.08*VDD V IIH Input High current 50 uA IIL Input Low current -50 uA Rext External resistor connects to GND (±5%) 64.6 68 71.4 kΩ AC/DC Electrical Characteristics (VDD = 3.3 ± 0.3V TA = -40oC to 85oC) Symbol Parameter Conditions Min. Ty p. Max. Units Power and Latency V dd-3.3 Supply voltage 3.0 3.3 3.6 V Iactive Active mode current consumption EN=1 (VDD=3.3V, 10Gbps, compli- ance test pattern, SWx=F, RXDET_ EN=High) 130 167 mA Islumber Slumber mode current consumption EN=1 (VDD=3.3V, no input signal lon- ger than Tslumber, RXDET_EN=High) 16 19 mAIDeepSlumber Deep slumber mode current con- sumption EN=1 (VDD=3.3V, no input signal longer than T DeepSlumber, RXDET_ EN=High) 0.4 0.6 Iunplug Unplug mode current consumption EN=1, no output load is detected, RX- DET_EN=High 0.3 0.45 Ipd Power down mode current con- sumption EN=0 10 50 µA tpd Latency From input to output 2 ns

www.diodes.com December 2019 Diodes Incorporated PI3EQX1002B1 Document Number DS40592 Rev 3-2 Symbol Parameter Conditions Min. Ty p. Max. Units CML Receiver Input (100Ω differential) Receiver Electrical Specification Crxparasitic The parasitic capacitor for RX 1.0 pF RRX-DIFF-DC DC Differential Input Impedance 72 120 Ω RRX-SINGLE_DC DC single ended input impedance DC impedance limits are need to guar - antee RxDet. Measured with respect to GND over a voltage of 500mV max 18 30 ZRX-HIZ-DC-PD DC input CM input impedance for V>0 during reset or power down (Vcm=0 to 500mV) 25 kΩ C ac_coupling AC coupling capacitance 75 265 nF VRX-CM-AC-P Common mode peak voltage AC up to 5GHz 150 mVpea k VRX-CM-DC-Ac- tive-Idle-Delta-P Common mode peak voltage |Avguo(|VTX-D+ + VTX-D-|)/2-Avgu1(|VTX-D+ + VTX-D-|)/2| Between U0 and U1. AC up to 5GHz 200 mVpea k Transmitter Electrical Specification VTX-DIFF-PP Output differential p-p voltage swing Differential Swing |VTX-D+-VTX-D-| 1.2 Vppd RTX-DIFF-DC DC Differential TX Impedance 72 120 Ω VTX-RCV-DET The amount of voltage change al- lowed during RxDet 600 mV Cac_coupling AC coupling capacitance 75 265 nF TTX-EYE(10Gbps) Transmitter eye, Include all jitter At the silicon pad. 10Gbps 0.646 UI TTX-EYE(5Gbps) Transmitter eye, Include all jitter At the silicon pad. 5Gbps 0.625 UI TTX-DJ- DD(10Gbps) Transmitter deterministic jitter At the silicon pad. 10Gbps 0.17 UI TTX-DJ-DD(5Gbps) Transmitter deterministic jitter At the silicon pad. 5Gbps 0.205 UI Ctxparasitic The parasitic capacitor for TX 1.1 pF RTX-DC-CM Common mode DC output Imped- ance 18 30 Ω VTX-DC-CM The instantaneous allowed DC com - mon mode voltage at the connector side of the AC coupling capacitors |VTX-D++VTX-D-|/2 0 2.2 V VTX-C Common-Mode Voltage |VTX-D++VTX-D-|/2 VDD- 2V VDD V VTX-CM-AC-PP- Active Active mode TX AC common mode voltage VTX-D++VTX-D- for both time and ampli - tude 100 mVpp VTX-CM-DC- Active_Idle-Delta Common mode delta voltage |Avguo(|VTEX-D+ + VTX-D-|)/2-Avgu1(|VTX- D+ + VTX-D-|)/2| Between U0 to U1 200 mV- peak AC/DC Electrical Characteristics Cont.

www.diodes.com December 2019 Diodes Incorporated PI3EQX1002B1 Document Number DS40592 Rev 3-2 Symbol Parameter Conditions Min. Ty p. Max. Units VTX-Idle-Diff-AC- pp Idle mode AC common mode delta voltage|VTX-D+-VTX-D-| Between Tx+ and Tx- in idle mode. Use the HPF to remove DC components. =1/LPF. No AC and DC signals are ap- plied to Rx terminals . 10 mVppd V TX-Idle-Diff-DC Idle mode DC common mode delta voltage |VTX-D+-VTX-D-| Between Tx+ and Tx- in idle mode. Use the LPF to remove DC components. =1/HPF. No AC and DC signals are applied to Rx terminals. 10 mV Channel Performance G p Peaking gain (Compensation at 5GHz, relative to 100MHz, 100mVp- p sine wave input) EQx=0 EQx=R EQx=F EQx=1 12.4 10.6 14.6 dB Variation around typical -3 +3 dB G F Flat gain (100MHz, EQx=F, SWx=F) FQx=0 FQx=R FQx=F FQx=1 -1.6 -0.5 2.7 dB Variation around typical -3 +3 dB V SW_100M -1dB compression point output swing (at 100MHz) SWx=0 SWx=R SWx=F SWx=1 800 1200 1000 1100 mVppd V SW_5G -1dB compression point output swing (at 5GHz) SWx=0 SWx=R SWx=F SWx=1 750 950 850 900 mVppd DDNEXT Differential near-end crosstalk (1) 100MHz to 5GHz, RXDET_EN=1, Figure 2 -40 dB Vnoise-input Input-referred noise 100MHz to 5GHz, FGx=1, EQx=R, SW=F, Figure 3 0.6 mV RMS 100MHz to 5GHz, FGx=1, EQx=1, SW=F, Figure 3 0.5 V noise-output Output-referred noise(2) 100MHz to 5GHz, FGx=1, EQx=R, SW=F, Figure 3 0.8 mV RMS 100MHz to 5GHz, FGx=1, EQx=1, SW=F, Figure 3 1 AC/DC Electrical Characteristics Cont.

www.diodes.com December 2019 Diodes Incorporated PI3EQX1002B1 Document Number DS40592 Rev 3-2 Symbol Parameter Conditions Min. Ty p. Max. Units Signal and Frequency Detectors Vth_upm Unplug mode detector threshold Threshold of LFPS when the input impedance of the redriver is 67kohm to VbiasRx only. Used in the unplug mode. 200 800 mVppd V th_dsm Deep slumber mode detector thresh - old LFPS signal threshold in Deep slumber mode 100 600 mVppd V th_am Active mode detector threshold Signal threshold in Active and slumber mode 45 175 mVppd F th LFPS frequency detector Detect the frequency of the input CLK pattern 100 400 MHz Note: 1. Measured using a vector-network analyzer (VNA) with -15dbm power level applied to the adjacent input. The VNA detects the signal at the output of the victim channel. All other inputs and outputs are terminated with 50Ω. 2. Guaranteed by design and characterization. AC/DC Electrical Characteristics Cont.

• Power (VDD) and ground (GND) pins should be connected to corresponding power planes of the printed circuit board directly without passing through any resistor.
• The thickness of the PCB dielectric layer should be minimized such that the VDD and GND planes create low inductance paths.
• One low-ESR 0.1uF decoupling capacitor should be mounted at each VDD pin or should supply bypassing for at most two VDD pins. Capacitors of smaller body size, i.e. 0402 package, is more preferable as the insertion loss is lower. The capacitor should be placed next to the VDD pin.
• One capacitor with capacitance in the range of 4.7uF to 10uF should be incorporated in the power supply decoupling design as well. It can be either tantalum or an ultra-low ESR ceramic.
• A ferrite bead for isolating the power supply for Diodes high-speed device from the power supplies for other parts on the printed circuit board should be implemented.
• More than 3 thermal ground vias must be required on the thermal pad. 25-mil or less pad size and 14-mil or less finished hole are recommended. G N D P la ne VIN V DD P la ne 10uF 1uF 0.1uF 0.1uF 0.1uF Bypass noise Power Flow VIN VIN Center Pad GND Plane More than 3 Thermal GND Vias must be required on the Thermal Pad area PCB Layout Guideline

Figure 5. General Power and Ground Guideline

www.diodes.com December 2019 Diodes Incorporated PI3EQX1002B1 Document Number DS40592 Rev 3-2

Ordering Information

Ordering Number Package Code Package Description PI3EQX1002B1ZLEX ZL 30-contact, Thin Fine Pitch Quad Flat No lead Package (TQFN) Packaging Mechanical: 30-TQFN (ZL) DESCRIPTION: 30-contact, Thin Fine Pitch Quad Flat No lead Package (TQFN) PACKAGE CODE: ZL REVISION: -- Notes: 1. All dimensions are in mm. Angles in degrees. 2. Refer JEDEC MO-220. 3. Recommended land pattern is for reference only. DOCUMENT CONTROL #: PD-2172 DATE: 10/21/13 14-0006 For latest package info. please check: http://www.diodes.com/design/support/packaging/pericom-packaging/packaging-mechanicals-and-thermal-characteristics/ Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. E = Pb-free and Green 5. X suffix = Tape/Reel

www.diodes.com December 2019 Diodes Incorporated PI3EQX1002B1 Document Number DS40592 Rev 3-2 IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further no - tice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determi - native format released by Diodes Incorporated. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2016, Diodes Incorporated www.diodes.com