PI2DDR3212ZLEX DIODES | Alldatasheet

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Technical content

Features

ÎÎ 14 bit 2:1 switch that supports DDR3 800 2133Mbps, DDR4 1600~4266 Mbps ÎÎ VDD 1.35V/ 1.5V/ 1.8V ÎÎ Flow through pinout option for easy layout ÎÎ SEL and Global Enable ÎÎ 110 µA typ. operating current at 1.35V VDD. ÎÎ High impedance and low Coff channel output when disabled or deselected ÎÎ Low RON: 8Ω typical ÎÎ 3dB Bandwidth: 3.3GHz ÎÎ Low insertion loss: -0.7dB (0 ≤ f ≤ 1 GHz) ÎÎ Low return loss: -23dB (0 ≤ f ≤ 1 GHz) ÎÎ Low cross-talk for high speed channels: -25dB typ. (0<f<2GHz) ÎÎ Low off-isolation: -28dB (0 ≤ f ≤ 1 GHz) ÎÎ Low bit-to-bit skew 20ps Max ÎÎ ESD: 2KV HBM ÎÎ POD_12, SSTL_12, SSTL_135, SSTL_15 or SSTL_18 signaling ÎÎ Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) ÎÎ Halogen and Antimony Free. “Green” Device (Note 3) ÎÎ For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://www.diodes.com/quality/product-definitions/ ÎÎ Packaging (Pb-free and Green) à 52-pin, 3.5x9mm TQFN (ZL) à 48-pin, 4.5x4.5mm TFBGA (NC) pin compatible with CBTW28DD14 Application ÎÎ DDR3/DDR4 Memory Bus System ÎÎ NVDIMM Module ÎÎ Flash Memory Array sub system ÎÎ High Speed multiplexing A Product Line of Diodes Incorporated PI2DDR3212 1.35V/1.5V/1.8V 14 bit 2:1 DDR3/DDR4 Switch bP Lead-free Green Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. Block Diagram

www.diodes.com December 2020 Diodes Incorporated PI2DDR3212 Document Number DS43334 Rev 1-2 A Product Line of Diodes Incorporated PI2DDR3212 Pin Name IO Ty pe Descriptions VDD Power 1.35V, 1.5V or 1.8V power supply. GND Ground 1.35V, Ground connection A[0:13] I/O 14-bit wide input/output, port A B[0:13] I/O 14-bit wide input/output, port B C[0:13] I/O 14-bit wide input/output, port C SEL I CMOS input for channel selection EN I CMOS input When HIGH, connection is set using the SEL input signal When LOW, all ports are mutually isolated EN Function

1 Global Enable

0 Global Disable

Pin Configuration (48-TFBGA ) Pin Configuration (52-TQFN) B11 C11 B10 C10 V GND EN DD A13 A12 A11 VDD A10 GND V DD SEL GND B13 C13 B12 C12 GND GND Pin Description Truth Table (SEL) Truth Table (EN) SEL Function

0 Output B is selected

1 Output C is selected

www.diodes.com December 2020 Diodes Incorporated PI2DDR3212 Document Number DS43334 Rev 1-2 A Product Line of Diodes Incorporated PI2DDR3212 Note: Stresses greater than those listed under MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. Maximum Ratings (Above which useful life may be impaired. For user guidelines, not tested.) Recommended Operation Conditions Parameter Min. Ty p. Max. Unit Ambient Operating Temperature -10 +85 °C Power Supply Voltage (measured in respect to GND) +1.28 1.8 +2.0 V Static Characteristics Symbol Parameter Conditions Min. Ty p. Max. Unit VDD Supply Voltage 1.28 1.35/ 1.5/1.8 2 V IDD VDD Supply Current EN= HIGH; VDD=1.8V 220 350 μA EN= LOW; VDD=1.8V 0.1 10 μA IDD VDD Supply Current EN= HIGH; VDD=1.35V 110 200 μA EN= LOW; VDD=1.35V 0.05 2 μA Control Pin (SEL, EN) IIH High level digital input current VIH=VDD, VDD=2.0V 5 μA IIL Low level digital input current VIL = GND, VDD=2.0V 5 μA VIH High level digital input voltage 0.8 *VDD V VIL Low level digital input voltage 0.2*VDD V I/O Pin (A, B ,C) COFF Switch OFF capacitance f = 1MHz; VI/O = 0V 1.1 pF CON Switch ON capacitance f = 1MHz; VI/O = 0V 2.1 pF

www.diodes.com December 2020 Diodes Incorporated PI2DDR3212 Document Number DS43334 Rev 1-2 A Product Line of Diodes Incorporated PI2DDR3212 Dynamic Characteristics (over recommended operating conditions unless otherwise noted) Symbol Parameter Test Conditions Min. Ty p.(1) Max. Units tstartup Startup time Supply voltage valid or EN going HIGH to channels specified characteristics 5 10 µs trcfg Reconfiguration time SEL state change to channel specified oper - ating characteristics 0.02 0.04 tpd Propagation delay From A port to B port or C port or vice versa 60 ps tsk Skew time From any output to any output 18 20 ps VI Input Voltage -0.3 Vdd+0.3 V B Bandwidth -3dB intercept 3.3 GHz C Crosstalk attenuation Adjacent channels are on; 0 ≤ f ≤ 1GHz -26 dB IL Insertion Loss 0 ≤ f ≤ 1GHz -0.7 dB f = 2.5GHz -2.5 dB RL Input Return Loss 0 ≤ f ≤ 1GHz -23 dB OI Off Isolation 0 ≤ f ≤ 1 GHz -28 dB

www.diodes.com December 2020 Diodes Incorporated PI2DDR3212 Document Number DS43334 Rev 1-2 A Product Line of Diodes Incorporated PI2DDR3212 Application Diagram SSD, Flash Storage Application using PI2DDR3212 Super capacitor

www.diodes.com December 2020 Diodes Incorporated PI2DDR3212 Document Number DS43334 Rev 1-2 A Product Line of Diodes Incorporated PI2DDR3212 PI2DDR 3212ZLE YYWWXX YY: Year WW: Workweek 1st X: Assembly Code 2nd X: Fab Code PI2DDR 3212NCE YYWWXX YY: Year WW: Workweek 1st X: Assembly Code 2nd X: Fab Code Bar above fab code means Cu wire Part Marking

www.diodes.com December 2020 Diodes Incorporated PI2DDR3212 Document Number DS43334 Rev 1-2 A Product Line of Diodes Incorporated PI2DDR3212 Packaging Mechanical: 48-TFBGA (NC) 14-0123

www.diodes.com December 2020 Diodes Incorporated PI2DDR3212 Document Number DS43334 Rev 1-2 A Product Line of Diodes Incorporated PI2DDR3212

Ordering Information

Ordering Code Packaging Code Package Description PI2DDR3212ZLEX ZL 52-Pin, Thin Quad Flat No-Lead (TQFN) PI2DDR3212NCEX NC 48-Pin, Thin Fine Pitch Ball Grid Array (TFBGA) Packaging Mechanical: 52-TQFN (ZL) Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. E = Pb-free and Green 5. X suffix = Tape/Reel For latest package info. please check: http://www.diodes.com/design/support/packaging/pericom-packaging/packaging-mechanicals-and-thermal-characteristics/

www.diodes.com December 2020 Diodes Incorporated PI2DDR3212 Document Number DS43334 Rev 1-2 A Product Line of Diodes Incorporated PI2DDR3212 IMPORTANT NOTICE 1. DIODES INCORPORATED AND ITS SUBSIDIARIES (“DIODES”) MAKE NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO ANY INFORMATION CONTAINED IN THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY, FIT - NESS FOR A PARTICULAR PURPOSE OR NON-INFRINGEMENT OF THIRD PARTY INTELLECTUAL PROPERTY RIGHTS (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 2. The Information contained herein is for informational purpose only and is provided only to illustrate the operation of Diodes products described herein and application examples. Diodes does not assume any liability arising out of the application or use of this document or any product described herein. This docu - ment is intended for skilled and technically trained engineering customers and users who design with Diodes products. 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