PI2DDR3212

Features

Document overview

• PDF pages: 9

Technical content

Features

Î 14 bit 2:1 switch that supports DDR3 800 2133Mbps, DDR4 1600~4266 Mbps Î VDD 1.35V/ 1.5V/ 1.8V Î Flow through pinout option for easy layout Î SEL and Global Enable Î 110 µA typ. operating current at 1.35V VDD. Î High impedance and low Coff channel output when disabled or deselected Î Low RON: 8Ω typical Î 3dB Bandwidth: 3.3GHz Î Low insertion loss: -0.7dB (0 ≤ f ≤ 1 GHz) Î Low return loss: -23dB (0 ≤ f ≤ 1 GHz) Î Low cross-talk for high speed channels: -25dB typ. (0<f<2GHz) Î Low off-isolation: -28dB (0 ≤ f ≤ 1 GHz) Î Low bit-to-bit skew 20ps Max Î ESD: 2KV HBM Î POD_12, SSTL_12, SSTL_135, SSTL_15 or SSTL_18 signaling Î Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Î Halogen and Antimony Free. “Green” Device (Note 3) Î For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://www.diodes.com/quality/product-definitions/ Î Packaging (Pb-free and Green) à 52-pin, 3.5x9mm TQFN (ZL) à 48-pin, 4.5x4.5mm TFBGA (NC) pin compatible with CBTW28DD14 Application Î DDR3/DDR4 Memory Bus System Î NVDIMM Module Î Flash Memory Array sub system Î High Speed multiplexing A Product Line of Diodes Incorporated PI2DDR3212 1.35V/1.5V/1.8V 14 bit 2:1 DDR3/DDR4 Switch bP Lead-free Green Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. Block Diagram PART OBSOLETE - DISCONTINUED

Pin Name IO Ty pe Descriptions VDD Power 1.35V, 1.5V or 1.8V power supply. GND Ground 1.35V, Ground connection A[0:13] I/O 14-bit wide input/output, port A B[0:13] I/O 14-bit wide input/output, port B C[0:13] I/O 14-bit wide input/output, port C SEL I CMOS input for channel selection EN I CMOS input When HIGH, connection is set using the SEL input signal When LOW, all ports are mutually isolated EN Function

1 Global Enable

0 Global Disable

© 2023 Copyright Diodes Incorporated. All Rights Reserved. PI2DDR3212 Document Number DS43334 Rev 2-4 www.diodes.com Pin Configuration (48-TFBGA ) Pin Configuration (52-TQFN) Pin Description Truth Table (SEL) Truth Table (EN) SEL Function

0 Output B is selected

1 Output C is selected

© 2023 Copyright Diodes Incorporated. All Rights Reserved. PI2DDR3212 Document Number DS43334 Rev 2-4 www.diodes.com Note: Stresses greater than those listed under MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. Maximum Ratings (Above which useful life may be impaired. For user guidelines, not tested.) Recommended Operation Conditions Parameter Min. Ty p. Max. Unit Ambient Operating Temperature -10 +85 °C Power Supply Voltage (measured in respect to GND) +1.28 1.8 +2.0 V Static Characteristics Symbol Parameter Conditions Min. Ty p. Max. Unit VDD Supply Voltage 1.28 1.35/ 1.5/1.8 2 V IDD VDD Supply Current EN= HIGH; VDD=1.8V 220 350 μA EN= LOW; VDD=1.8V 0.1 10 μA IDD VDD Supply Current EN= HIGH; VDD=1.35V 110 200 μA EN= LOW; VDD=1.35V 0.05 2 μA Control Pin (SEL, EN) IIH High level digital input current VIH=VDD, VDD=2.0V 5 μA IIL Low level digital input current VIL = GND, VDD=2.0V 5 μA VIH High level digital input voltage 0.8 *VDD V VIL Low level digital input voltage 0.2*VDD V I/O Pin (A, B ,C) COFF Switch OFF capacitance f = 1MHz; VI/O = 0V 1.1 pF CON Switch ON capacitance f = 1MHz; VI/O = 0V 2.1 pF

© 2023 Copyright Diodes Incorporated. All Rights Reserved. PI2DDR3212 Document Number DS43334 Rev 2-4 www.diodes.com Dynamic Characteristics (over recommended operating conditions unless otherwise noted) Symbol Parameter Test Conditions Min. Ty p.(1) Max. Units tstartup Startup time Supply voltage valid or EN going HIGH to channels specified characteristics 5 10 µs trcfg Reconfiguration time SEL state change to channel specified oper - ating characteristics 0.02 0.04 tpd Propagation delay From A port to B port or C port or vice versa 60 ps tsk Skew time From any output to any output 18 20 ps VI Input Voltage -0.3 Vdd+0.3 V B Bandwidth -3dB intercept 3.3 GHz C Crosstalk attenuation Adjacent channels are on; 0 ≤ f ≤ 1GHz -26 dB IL Insertion Loss 0 ≤ f ≤ 1GHz -0.7 dB f = 2.5GHz -2.5 dB RL Input Return Loss 0 ≤ f ≤ 1GHz -23 dB OI Off Isolation 0 ≤ f ≤ 1 GHz -28 dB

© 2023 Copyright Diodes Incorporated. All Rights Reserved. PI2DDR3212 Document Number DS43334 Rev 2-4 www.diodes.com Application Diagram SSD, Flash Storage Application using PI2DDR3212 Super capacitor

© 2023 Copyright Diodes Incorporated. All Rights Reserved. PI2DDR3212 Document Number DS43334 Rev 2-4 www.diodes.com PI2DDR 3212ZLE YYWWXX YY: Year WW: Workweek 1st X: Assembly Code 2nd X: Fab Code PI2DDR 3212NCE YYWWXX YY: Year WW: Workweek 1st X: Assembly Code 2nd X: Fab Code Bar above fab code means Cu wire Part Marking

© 2023 Copyright Diodes Incorporated. All Rights Reserved. PI2DDR3212 Document Number DS43334 Rev 2-4 www.diodes.com Packaging Mechanical: 48-TFBGA (NC) 14-0123

© 2023 Copyright Diodes Incorporated. All Rights Reserved. PI2DDR3212 Document Number DS43334 Rev 2-4 www.diodes.com

Ordering Information

Ordering Code Packaging Code Package Description PI2DDR3212ZLEX ZL 52-Pin, Thin Quad Flat No-Lead (TQFN) PI2DDR3212NCEX NC 48-Pin, Thin Fine Pitch Ball Grid Array (TFBGA) Packaging Mechanical: 52-TQFN (ZL) Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. E = Pb-free and Green 5. X suffix = Tape/Reel For latest package info. please check: http://www.diodes.com/design/support/packaging/pericom-packaging/packaging-mechanicals-and-thermal-characteristics/

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