PHT6N06T

PHT6N06T PHILIPS | Alldatasheet

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Philips Semiconductors Product specification TrenchMOS  transistor PHT6N06T Standard level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT logic level field-effect power transistor in a plastic envelope VDS Drain-source voltage 55 V suitable for surface mounting. ID Drain current (DC) Tsp = 25 ˚C 5.5 A Using ’trench’technology the Drain current (DC) T amb = 25 ˚C 2.5 A device features very low P tot Total power dissipation 8.3 W on-state resistance and has T j Junction temperature 150 ˚C integral zener diodes giving R DS(ON) Drain-source on-state 150 m Ω ESDprotection. It is intended for resistance V GS = 10 V use in DC-DC converters and general purpose switching applications. PINNING - SOT223 PIN CONFIGURATION SYMBOL PIN DESCRIPTION 1 gate 2 drain 3 source 4 drain (tab) LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS Drain-source voltage - - 55 V VDGR Drain-gate voltage R GS = 20 kΩ -5 5V ±VGS Gate-source voltage - - 20 V ID Drain current (DC) T sp = 25 ˚C - 5.5 A Tamb = 25 ˚C - 2.5 A ID Drain current (DC) T sp = 100 ˚C - 3.8 A Tamb = 100 ˚C - 1.75 A IDM Drain current (pulse peak value) Tsp = 25 ˚C - 22 A Tamb = 25 ˚C - 10 A Ptot Total power dissipation T sp = 25 ˚C - 8.3 W Tamb = 25 ˚C - 1.8 W Tstg, Tj Storage & operating temperature - - 55 150 ˚C ESD LIMITING VALUE SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VC Electrostatic discharge capacitor Human body model - 2 kV voltage (100 pF, 1.5 k Ω ) d g s 1 23 September 1997 1 Rev 1.000

Philips Semiconductors Product specification TrenchMOS transistor PHT6N06T Standard level FET THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT R th j-sp From junction to solder point Mounted on any PCB 12 15 K/W R th j-amb From junction to ambient Mounted on PCB of Fig.19 - 70 K/W STATIC CHARACTERISTICS Tj= 25˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V(BR)DSS Drain-source breakdown V GS = 0 V; ID = 0.25 mA 55 - - V voltage T j = -55˚C 50 - - V VGS(TO) Gate threshold voltage V DS = VGS ; ID = 1 mA 2.0 3.0 4.0 V Tj = 150˚C 1.2 - - V IDSS Zero gate voltage drain current VDS = 55 V; VGS = 0 V; - 0.05 10 µA Tj = 150˚C - - 100 µA IGSS Gate source leakage current VGS = ±10 V - 0.04 1 µA Tj = 150˚C - - 10 µA ±V(BR)GSS Gate source breakdown voltage IG = ±1 mA 16 - - V R DS(ON) Drain-source on-state V GS = 10 V; ID = 5 A - 120 150 m Ω resistance T j = 150˚C - - 277 m Ω DYNAMIC CHARACTERISTICS Tmb = 25˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT gfs Forward transconductance V DS = 25 V; ID = 5 A; Tj = 25˚C 0.5 2.5 - S Q g(tot) Total gate charge I D = 5 A; VDD = 44 V; VGS = 10 V - 6 - nC Q gs Gate-source charge - 1.5 - nC Q gd Gate-drain (Miller) charge - 4 - nC C iss Input capacitance V GS = 0 V; VDS = 25 V; f = 1 MHz - 190 240 pF C oss Output capacitance - 65 80 pF C rss Feedback capacitance - 32 45 pF td on Turn-on delay time V DD = 30 V; ID = 5 A; - 9 14 ns tr Turn-on rise time V GS = 10 V; RG = 10 Ω ; - 28 42 ns td off Turn-off delay time - 15 23 ns tf Turn-off fall time T j = 25˚C - 8 12 ns REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS Tj = -55 to 175˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT IDR Continuous reverse drain T sp = 25˚C - - 5.5 A current IDRM Pulsed reverse drain current Tsp = 25˚C - - 30 A VSD Diode forward voltage I F = 2 A; VGS = 0 V - 0.85 1.1 V trr Reverse recovery time I F = 2 A; -dIF/dt = 100 A/µs; - 43 - ns Q rr Reverse recovery charge V GS = -10 V; VR = 30 V - 0.16 - µC September 1997 2 Rev 1.000

Philips Semiconductors Product specification TrenchMOS transistor PHT6N06T Standard level FET AVALANCHE LIMITING VALUE SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT W DSS Drain-source non-repetitive ID = 1.9 A; VDD ≤ 25 V; - - 15 mJ unclamped inductive turn-off VGS = 10 V; RGS = 50 Ω ; Tsp = 25 ˚C energy September 1997 3 Rev 1.000

Philips Semiconductors Product specification TrenchMOS transistor PHT6N06T Standard level FET Fig.1. Normalised power dissipation. PD% = 100⋅PD /PD 25 ˚C = f(Tsp) Fig.2. Normalised continuous drain current. ID% = 100⋅ID /ID 25 ˚C = f(Tsp); conditions: VGS ≥ 10 V Fig.3. Safe operating area. Tsp = 25 ˚C ID & IDM = f(VDS ); IDM single pulse; parameter tp Fig.4. Transient thermal impedance. Zth j-sp = f(t); parameter D = tp/T Fig.5. Typical output characteristics, Tj = 25 ˚C. ID = f(VDS ); parameter VGS Fig.6. Typical on-state resistance, Tj = 25 ˚C. R DS(ON) = f(ID ); parameter VGS 0 20 40 60 80 100 120 140 Tmb / C PD% Normalised Power Derating120 110 100 1E-07 1E-05 1E-03 1E-01 1E+01 t / s Zth / (K/W)1E+02 3E+01 1E+01 3E+00 1E+00 3E-01 1E-01 3E-02 1E-02 0.5 0.2 0.1 0.05

0.02 D = tp tp

T TP t D BUKX8150-55 0 20 40 60 80 100 120 140 Tmb / C ID% Normalised Current Derating120 110 100 02468 1 00 4.0 4.5 5.0 5.5 6.0 6.5 810 16ID/A VGS/V = VDS/V ID/A 1 us 10 us 100 us 1 ms 10 ms 100 ms tp = 0.1 100 11 0 5 5 RDS(ON) = VDS/ID DC BUKX8150-55 0123456789 1 0 1 10 100 200 300

400 RDS(ON)mOhm

6.5 5.55 September 1997 4 Rev 1.000

Philips Semiconductors Product specification TrenchMOS transistor PHT6N06T Standard level FET Fig.7. Typical transfer characteristics. ID = f(VGS ) ; conditions: VDS = 25 V; parameter Tj Fig.8. Typical transconductance, Tj = 25 ˚C. gfs = f(ID ); conditions: VDS = 25 V Fig.9. Normalised drain-source on-state resistance. a = RDS(ON) /RDS(ON)25 ˚C = f(Tj); ID = 5 A; VGS = 10 V Fig.10. Gate threshold voltage. VGS(TO) = f(Tj); conditions: ID = 1 mA; VDS = VGS Fig.11. Sub-threshold drain current. ID = f(VGS); conditions: Tj = 25 ˚C; VDS = VGS Fig.12. Typical capacitances, Ciss, Coss, Crss. C = f(VDS ); conditions: VGS = 0 V; f = 1 MHz 0123456780 ID/A VGS/V Tj/C = 150 25 BUK78xx-55 -100 -50 0 50 100 150 2000 Tj / C VGS(TO) / V max. typ. min. 1.5 2.5 3.5 123456789 1 0 gfs/S ID/A 0123451E-06 1E-05 1E-04 1E-03 1E-02 1E-01 Sub-Threshold Conduction typ2% 98% BUK98XX-55 -100 -50 0 50 100 150 200 0.5 1.5 2.5 Tmb / degC Rds(on) normalised to 25degCa 0.01 0.1 1 10 100 100 150 200 250 300 350 Ciss Coss Crss VDS/V pF September 1997 5 Rev 1.000

Philips Semiconductors Product specification TrenchMOS transistor PHT6N06T Standard level FET Fig.13. Typical turn-on gate-charge characteristics. VGS = f(QG ); conditions: ID = 5 A; parameter VDS Fig.14. Typical reverse diode current. IF = f(VSDS ); conditions: VGS = 0 V; parameter Tj Fig.15. Normalised avalanche energy rating. W DSS % = f(Tsp); conditions: ID = 1.9 A Fig.16. Avalanche energy test circuit. Fig.17. Switching test circuit. 012345670 VGS/V QG/nC VDS = 14V VDS = 44V 20 40 60 80 100 120 140 Tmb / C 120 110 100 WDSS% IF/A VSDS/V Tj/C = 150 25 L T.U.T. VDD RGS R 01 VDS -ID/100 shunt VGS W DSS = 0.5⋅LID 2 ⋅BV DSS /(BV DSS − VDD ) RD T.U.T. VDD RG VDS VGS September 1997 6 Rev 1.000

Philips Semiconductors Product specification TrenchMOS transistor PHT6N06T Standard level FET MOUNTING INSTRUCTIONS Dimensions in mm. Fig.18. soldering pattern for surface mounting SOT223. PRINTED CIRCUIT BOARD 3.8 min 6.32.3 4.6 1.5 min 1.5 min 1.5 min (3x) September 1997 7 Rev 1.000

Philips Semiconductors Product specification TrenchMOS transistor PHT6N06T Standard level FET Dimensions in mm. Fig.19. PCB for thermal resistance and power rating for SOT223. PCB: FR4 epoxy glass (1.6 mm thick), copper laminate (35 µm thick). 4.6 4.5 September 1997 8 Rev 1.000

Philips Semiconductors Product specification TrenchMOS transistor PHT6N06T Standard level FET MECHANICAL DATA Dimensions in mm Net Mass: 0.11 g Fig.20. SOT223 surface mounting package. Notes 1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent damage to MOS gate oxide. 2. Refer to surface mounting instructions for SOT223 envelope. 3. Epoxy meets UL94 V0 at 1/8". 6.7 6.3 3.1 2.9 1 23 2.31.05 0.85 0.80 0.60 4.6 3.7 3.3 7.3 6.7 B A 0.10 0.02 1316 max 1.8 max max 0.32 0.24 (4x) BM0.1 AM0.2 September 1997 9 Rev 1.000

Philips Semiconductors Product specification TrenchMOS transistor PHT6N06T Standard level FET DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.  Philips Electronics N.V. 1997 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. September 1997 10 Rev 1.000