PHP95N03LT PHILIPS | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 15
Technical content
PHP95N03LT; PHB95N03LT; PHE95N03LT N-channel TrenchMOS transistor Rev. 01 — 02 February 2001 Product specification c c 1. Description N-channel logic level field-effect power transistor in a plastic package using TrenchMOS™ 1 technology. Product availability: PHP95N03LT in SOT78 (TO-220AB) PHB95N03LT in SOT404 (D 2-PAK) PHE95N03LT in SOT226 (I2-PAK). 2. Features ■ Low on-state resistance ■ Fast switching. 3. Applications ■ High frequency computer motherboard DC to DC converters 4. Pinning information [1] It is not possible to make connection to pin 2 of the SOT404 package. 1. TrenchMOS is a trademark of Royal Philips Electronics. Table 1: Pinning - SOT78, SOT404, SOT226 simplified outline and symbol Pin Description Simplified outline Symbol 1 gate (g) SOT78 (TO-220AB) SOT404 (D 2-PAK) SOT226 (I 2-PAK) 2 drain (d) [1] 3 source (s) mb mounting base, connected to drain (d) MBK106 mb MBK116 mb MBK112123 mb s d g MBB076
Philips Semiconductors PHP95N03LT series N-channel TrenchMOS transistor Product specification Rev. 01 — 02 February 2001 2 of 15 9397 750 07814 © Philips Electronics N.V. 2001. All rights reserved. 5. Quick reference data 6. Limiting values Table 2: Quick reference data Symbol Parameter Conditions Typ Max Unit VDS drain-source voltage (DC) T j=2 5t o1 7 5°C − 25 V ID drain current (DC) T mb =2 5°C; VGS =5V − 75 A Ptot total power dissipation T mb =2 5°C − 125 W Tj junction temperature − 175 °C R DSon drain-source on-state resistance VGS = 10 V; ID =2 5A 5 7 m Ω VGS =5V ; ID =2 5A 7 . 5 9 m Ω Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage (DC) T j=2 5t o1 7 5°C − 25 V VDGR drain-gate voltage (DC) T j=2 5t o1 7 5°C; RGS =2 0kΩ− 25 V VGS gate-source voltage (DC) −± 15 V VGSM gate-source voltage t p ≤ 50 µs; pulsed; duty cycle 25 %; Tj≤ 150 °C −± 20 V ID drain current (DC) T mb =2 5°C; VGS =5V ;Figure 2and 3 − 75 A Tmb = 100°C; VGS =5V ;Figure 2 − 61 A IDM peak drain current T mb =2 5°C; pulsed; tp ≤ 10 µs;Figure 3 − 240 A Ptot total power dissipation T mb =2 5°C; Figure 1 − 125 W Tstg storage temperature −55 +175 °C Tj operating junction temperature −55 +175 °C Source-drain diode I S source (diode forward) current (DC) Tmb =2 5°C − 75 A ISM peak source (diode forward) current Tmb =2 5°C; pulsed; tp ≤ 10 µs − 240 A Avalanche ruggedness E AS non-repetitive avalanche energy unclamped inductive load; ID =7 5A ;tp = 0.1 ms; VDD =1 5V ; R GS =5 0Ω ; VGS = 5V; starting Tj=2 5°C; − 120 mJ IAS non-repetitive avalanche current unclamped inductive load; VDD =1 5V ;RGS =5 0Ω ; VGS =5 V ; starting Tj=2 5°C − 75 A
Philips Semiconductors PHP95N03LT series N-channel TrenchMOS transistor Product specification Rev. 01 — 02 February 2001 3 of 15 9397 750 07814 © Philips Electronics N.V. 2001. All rights reserved. Fig 1. Normalized total power dissipation as a function of mounting base temperature. Fig 2. Normalized continuous drain current as a function of mounting base temperature. Tmb =2 5°C; IDM is single pulse. Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage. Tmb (oC) Pder 120 110 100 0 0 20 40 60 80 100 120 140 160 180 03ac97 (%) 03ad94 100 120 0 60 120 180 T mb (ºC) Ider (%) P der P tot P tot 25 C°() ID I D2 5C°() 03ad77 102 103 1 10 10 2VDS (V) ID (A) D.C. 100 ms 10 ms R DSon = VDS / ID 1 ms tp = 10 µs 100 µs tp tp T P t Tδ =
Philips Semiconductors PHP95N03LT series N-channel TrenchMOS transistor Product specification Rev. 01 — 02 February 2001 4 of 15 9397 750 07814 © Philips Electronics N.V. 2001. All rights reserved. 7. Thermal characteristics
7.1 Transient thermal impedance
Table 4: Thermal characteristics Symbol Parameter Conditions Value Unit R th(j-mb) thermal resistance from junction to mounting base Figure 4 1.2 K/W R th(j-a) thermal resistance from junction to ambient vertical in still air; SOT78 package 60 K/W vertical in still air; SOT226 package 65 K/W mounted on a printed circuit board; minimum footprint; SOT404 and SOT226 packages
50 K/W
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration. 03ad76 10-3 10-2 10-1 10-5 10-4 10-3 10-2 10-1 1 10tp (s) Zth(j-sp) (K/W) single pulse δ = 0.5 0.2 0.1 0.05 0.02 tp tp T P t Tδ =
Philips Semiconductors PHP95N03LT series N-channel TrenchMOS transistor Product specification Rev. 01 — 02 February 2001 5 of 15 9397 750 07814 © Philips Electronics N.V. 2001. All rights reserved. 8. Characteristics Table 5: Characteristics Tj=2 5°C unless otherwise specified Symbol Parameter Conditions Min Typ Max Unit Static characteristics V (BR)DSS drain-source breakdown voltage ID = 0.25 mA; VGS =0V Tj=2 5°C2 5 −− V Tj= −55 °C2 2 −− V VGS(th) gate-source threshold voltage ID = 1 mA; VDS =V GS ;Figure 9 Tj=2 5°C 1 1.5 2 V Tj= 175°C 0.5 −− V IDSS drain-source leakage current V DS =2 5V ; VGS =0V Tj=2 5°C − 0.05 10 µA Tj= 175°C −− 500 µA IGSS gate-source leakage current V GS = ±5 V; VDS =0V − 10 100 nA R DSon drain-source on-state resistance VGS =5V ; ID =2 5A ;Figure 7and 8 Tj=2 5°C − 7.5 9 m Ω Tj= 175°C − 13 15.5 m Ω VGS =1 0V ; ID =2 5A ; Tj=2 5°C − 57m Ω Dynamic characteristics g fs forward transconductance V DS =2 5V ; ID =5 0A Figure 11 − 50 − S Q g(tot) total gate charge I D = 50 A; VDD =1 2V ; VGS = 4.5 V; Figure 14 − 43 − nC Q gs gate-source charge − 12 − nC Q gd gate-drain (Miller) charge − 16 − nC C iss input capacitance V GS =0V ; VDS = 25 V; f = 1 MHz;Figure 12 − 2200 − pF C oss output capacitance − 770 − pF C rss reverse transfer capacitance − 500 − pF td(on) turn-on delay time V DD =1 5V ; ID = 15 A; VGS =1 0V ; R G =6 Ω ; resistive load − 10 20 ns tr turn-on rise time − 30 50 ns td(off) turn-off delay time − 110 140 ns tf turn-off fall time − 80 100 ns Source-drain diode V SD source-drain (diode forward) voltage IS = 25 A; VGS =0V ;Figure 13 − 0.85 1.2 V IS =4 0A ;VGS =0V − 0.9 − V
Philips Semiconductors PHP95N03LT series N-channel TrenchMOS transistor Product specification Rev. 01 — 02 February 2001 6 of 15 9397 750 07814 © Philips Electronics N.V. 2001. All rights reserved. Tj=2 5°CT j=2 5°C and 175°C; VDS ≥ ID x RDSON Fig 5. Output characteristics: drain current as a function of drain-source voltage; typical values. Fig 6. Transfer characteristics: drain current as a function of gate-source voltage; typical values. Tj=2 5°C Fig 7. Drain-source on-state resistance as a function of drain current; typical values. Fig 8. Normalized drain-source on-state resistance factor as a function of junction temperature. 03ad78 0 0.4 0.8 1.2 1.6 2 V DS (V) ID (A) 3 V
5 V Tj = 25ºC
VGS = 2.5V 10 V 3.5 V 03ad80 01234 V GS (V) ID (A) VDS > ID x RDSon Tj = 25 ºC175 ºC 03ad79 0.01 0.02 0.03 0.04 0.05 0.06 0 1 53 04 56 07 5 I D (A) R DSon (Ω ) 2.5 V VGS = 3 V Tj = 25 ºC 10 V 3.5 V 03ad57 0.4 0.8 1.2 1.6 -60 0 60 120 180 T j (ºC) a a R DSon R DSon 25 C°()
Philips Semiconductors PHP95N03LT series N-channel TrenchMOS transistor Product specification Rev. 01 — 02 February 2001 7 of 15 9397 750 07814 © Philips Electronics N.V. 2001. All rights reserved. ID = 1 mA; VDS =V GS Tj=2 5°C; VDS =5V Fig 9. Gate-source threshold voltage as a function of junction temperature. Fig 10. Sub-threshold drain current as a function of gate-source voltage. Tj=2 5°C and 175°C; VDS > ID × R DSon VGS =0V ;f=1M H z Fig 11. Forward transconductance as a function of drain current; typical values. Fig 12. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values. 03aa33 0.5 1.5 2.5 -60 -20 20 60 100 140 180 max typ min VGS(th) Tj (oC) (V) 03aa36 0 0.5 1 1.5 2 2.5 3 maxtypmin ID VGS (V) 10-6 10-5 10-4 10-3 10-2 10-1 (A) 03aa81 0 1 53 04 56 07 5 I D (A) gfs (S) Tj = 25 ºC 175 ºC VDS > ID x RDSon 03aD83 102 103 104 10-1 1 10 10 2VDS (V) C iss, C oss, Crss (pF) C iss C oss C rss
Philips Semiconductors PHP95N03LT series N-channel TrenchMOS transistor Product specification Rev. 01 — 02 February 2001 8 of 15 9397 750 07814 © Philips Electronics N.V. 2001. All rights reserved. Tj=2 5°C and 175°C; VGS =0V I D = 50 A; VDD = 24 V, 12 V and 6 V Fig 13. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values. Fig 14. Gate-source voltage as a function of gate charge; typical values. 03ad82 0 0.3 0.6 0.9 1.2 V SD (V) IS (A) Tj = 25 ºC175 ºC VGS = 0 V 03ad84 03 0 6 0 9 0 Q G (nC) VGS (V) ID = 50 A Tj = 25 ºC VDD = 6 V12 V 24 V
Philips Semiconductors PHP95N03LT series N-channel TrenchMOS transistor Product specification Rev. 01 — 02 February 2001 9 of 15 9397 750 07814 © Philips Electronics N.V. 2001. All rights reserved. 9. Package outline Fig 15. SOT78 (TO-220AB). REFERENCESOUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE IEC JEDEC EIAJ SOT78 SC-46 3-lead TO-220AB D D 1 q P L 123 L2(1) e e b 0 5 10 mm scale Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB SOT78 DIMENSIONS (mm are the original dimensions) AE c Note 1. Terminals in this zone are not tinned. Q UNIT A 1 b1 D 1 e P mm 2.54 qQA b Dc L2 (1) max. 3.0 3.8 3.6 15.0 13.5 3.30 2.79 3.0 2.7 2.6 2.2 0.7 0.4 15.8 15.2 0.9 0.7 1.3 1.0 4.5 4.1 1.39 1.27 6.4 5.9 10.3 9.7 L1E L 99-09-13 00-09-07 mounting base
Philips Semiconductors PHP95N03LT series N-channel TrenchMOS transistor Product specification Rev. 01 — 02 February 2001 10 of 15 9397 750 07814 © Philips Electronics N.V. 2001. All rights reserved. Fig 16. SOT404 (D2-PAK) UNIT A REFERENCESOUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE IEC JEDEC EIAJ mm A 1 D 1 D max. E eL p H D Qc 2.54 2.60 2.20 15.40 14.80 2.90 2.1011 1.60 1.20 10.30 9.70 4.50 4.10 1.40 1.27 0.85 0.60 0.64 0.46 b DIMENSIONS (mm are the original dimensions) SOT404 0 2.5 5 mm scale Plastic single-ended surface mounted package (Philips version of D2-PAK); 3 leads (one lead cropped) SOT404 e e E b D 1 H D D Q Lp c A mounting base 98-12-14 99-06-25
Philips Semiconductors PHP95N03LT series N-channel TrenchMOS transistor Product specification Rev. 01 — 02 February 2001 11 of 15 9397 750 07814 © Philips Electronics N.V. 2001. All rights reserved. Fig 17. SOT226 (I2-PAK) REFERENCESOUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE IEC JEDEC EIAJ SOT226 low-profile 3-lead TO-220AB D D 1 L 123 mounting base e e Q b 0 5 10 mm scale Plastic single-ended package; low-profile 3 lead TO-220AB SOT226 DIMENSIONS (mm are the original dimensions) A E A1 c Note 1. Terminals in this zone are not tinned. UNIT A 1 b1 D 1 eQ mm 2.54 2.6 2.2 3.30 2.79 15.0 13.5 10.3 9.7 1.5 1.1 9.65 8.65 0.7 0.4 1.3 1.0 0.9 0.7 1.40 1.27 4.5 4.1 Ab Dc 3.0 (1) max E L 99-05-27 99-09-13
Philips Semiconductors PHP95N03LT series N-channel TrenchMOS transistor Product specification Rev. 01 — 02 February 2001 12 of 15 9397 750 07814 © Philips Electronics N.V. 2001. All rights reserved. 10. Revision history Table 6: Revision history Rev Date CPCN Description 01 20010202 - Product specification; initial version
Philips Semiconductors PHP95N03LT series N-channel TrenchMOS transistor Product specification Rev. 01 — 02 February 2001 13 of 15 9397 750 07814 © Philips Electronics N.V. 2001 All rights reserved. 11. Data sheet status [1] Please consult the most recently issued data sheet before initiating or completing a design. 12. Definitions Short-form specification —The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition —Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information —Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 13. Disclaimers Life support —These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes —Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Datasheet status Product status Definition[1] Objective specification Development This data sheet contains the design target or goal specifications for product development. Specification may change in any manner without notice. Preliminary specification Qualification This data sheet contains preliminary data, and supplementary data will be published at a later date. Philips Semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product. Product specification Production This data sheet contains final specifications. Philips Semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product.
Philips Semiconductors PHP95N03LT series N-channel TrenchMOS transistor Product specification Rev. 01 — 02 February 2001 14 of 15 9397 750 07814 © Philips Electronics N.V. 2001. All rights reserved. Philips Semiconductors - a worldwide company Argentina: see South America Australia: Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Tel. +43 160 101, Fax. +43 160 101 1210 Belarus: Tel. +375 17 220 0733, Fax. +375 17 220 0773 Belgium: see The Netherlands Brazil:see South America Bulgaria: Tel. +359 268 9211, Fax. +359 268 9102 Canada: Tel. +1 800 234 7381 China/Hong Kong: Tel. +852 2 319 7888, Fax. +852 2 319 7700 Colombia: see South America Czech Republic: see Austria Denmark: Tel. +45 3 288 2636, Fax. +45 3 157 0044 Finland: Tel. +358 961 5800, Fax. +358 96 158 0920 France: Tel. +33 14 099 6161, Fax. +33 14 099 6427 Germany: Tel. +49 40 23 5360, Fax. +49 402 353 6300 Hungary: Tel. +36 1 382 1700, Fax. +36 1 382 1800 India: Tel. +91 22 493 8541, Fax. +91 22 493 8722 Indonesia: see Singapore Ireland: Tel. +353 17 64 0000, Fax. +353 17 64 0200 Israel: Tel. +972 36 45 0444, Fax. +972 36 49 1007 Italy: Tel. +39 039 203 6838, Fax +39 039 203 6800 Japan: Tel. +81 33 740 5130, Fax. +81 3 3740 5057 Korea: Tel. +82 27 09 1412, Fax. +82 27 09 1415 Malaysia: Tel. +60 37 50 5214, Fax. +60 37 57 4880 Mexico: Tel. +9-5 800 234 7381 Middle East: see Italy Netherlands: Tel. +31 40 278 2785, Fax. +31 40 278 8399 New Zealand: Tel. +64 98 49 4160, Fax. +64 98 49 7811 Norway: Tel. +47 22 74 8000, Fax. +47 22 74 8341 Philippines: Tel. +63 28 16 6380, Fax. +63 28 17 3474 Poland: Tel. +48 22 5710 000, Fax. +48 22 5710 001 Portugal: see Spain Romania: see Italy Russia: Tel. +7 095 755 6918, Fax. +7 095 755 6919 Singapore: Tel. +65 350 2538, Fax. +65 251 6500 Slovakia: see Austria Slovenia: see Italy South Africa: Tel. +27 11 471 5401, Fax. +27 11 471 5398 South America: Tel. +55 11 821 2333, Fax. +55 11 829 1849 Spain: Tel. +34 33 01 6312, Fax. +34 33 01 4107 Sweden: Tel. +46 86 32 2000, Fax. +46 86 32 2745 Switzerland: Tel. +41 14 88 2686, Fax. +41 14 81 7730 Taiwan: Tel. +886 22 134 2451, Fax. +886 22 134 2874 Thailand: Tel. +66 23 61 7910, Fax. +66 23 98 3447 Turkey: Tel. +90 216 522 1500, Fax. +90 216 522 1813 Ukraine: Tel. +380 44 264 2776, Fax. +380 44 268 0461 United Kingdom: Tel. +44 208 730 5000, Fax. +44 208 754 8421 United States: Tel. +1 800 234 7381 Uruguay: see South America Vietnam: see Singapore Yugoslavia: Tel. +381 11 3341 299, Fax. +381 11 3342 553 For all other countries apply to: Philips Semiconductors, Marketing Communications, Building BE, P .O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 272 4825 Internet:http://www.semiconductors.philips.com (SCA71)
© Philips Electronics N.V. 2001. Printed in The Netherlands All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 02 February 2001 Document order number: 9397 750 07814
Contents
Philips Semiconductors PHP95N03LT series N-channel TrenchMOS transistor