PHP33NQ20T PHILIPS | Alldatasheet
Document overview
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- PDF pages: 13
Technical content
- Product profile
1.1 General description
Standard level N-channel enhancement mode field effect transistor in a plastic package using TrenchMOS™ technology.
1.2 Features
1.3 Applications
■ DC-to-DC primary side switching.
1.4 Quick reference data
- Pinning information [1] It is not possible to make a connection to pin 2 of the SOT404 package. PHP/PHB33NQ20T N-channel TrenchMOS™ standard level FET Rev. 01 — 8 November 2004 Product data sheet ■ Low on-state resistance ■ Fast switching ■ Low thermal resistance ■ Low gate charge. ■ VDS ≤ 200 V ■ ID ≤ 32.7 A ■ R DSon ≤ 77 mΩ ■ Q gd = 9.6 nC (typ). Table 1: Discrete pinning Pin Description Simplified outline Symbol 1 gate SOT78 (TO-220AB) SOT404 (D 2-PAK) 2 drain [1] 3 source mb mounting base; connected to drain mb mb S D G mbb076
9397 750 14003 © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Product data sheet Rev. 01 — 8 November 2004 2 of 13 Philips Semiconductors PHP/PHB33NQ20T N-channel TrenchMOS™ standard level FET 3. Ordering information 4. Limiting values Table 2: Ordering information Type number Package Name Description Version PHP33NQ20T TO-220AB Plastic single-ended package; heatsink mounted; 1 mounting hole; 3 lead TO-220AB SOT78 PHB33NQ20T D 2-PAK Plastic single-ended surface mounted package (D2-PAK); 3 leads (one lead cropped) SOT404 Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage (DC) 25 °C ≤ Tj≤ 175 °C - 200 V VDGR drain-gate voltage (DC) 25 °C ≤ Tj≤ 175 °C; RGS =2 0kΩ - 200 V VGS gate-source voltage (DC) - ±20 V ID drain current (DC) T mb =2 5°C; VGS =1 0V ;Figure2 and 3 - 32.7 A Tmb = 100°C; VGS =1 0V ;Figure2 - 23.1 A IDM peak drain current T mb =2 5°C; pulsed; tp ≤ 10 µs;Figure3 - 65.4 A Ptot total power dissipation T mb =2 5°C; Figure1 - 230 W Tstg storage temperature −55 +175 °C Tj junction temperature −55 +175 °C Source-drain diode I S source (diode forward) current (DC) Tmb =2 5°C - 32.7 A ISM peak source (diode forward) current Tmb =2 5°C; pulsed; tp ≤ 10 µs - 65.4 A Avalanche ruggedness E DS(AL)S non-repetitive drain-source avalanche energy unclamped inductive load; ID = 10.4 A; tp = 0.14 ms; VDD ≤ 200 V; RGS =5 0Ω ; VGS = 10 V; starting at Tj=2 5°C - 190 mJ
9397 750 14003 © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Product data sheet Rev. 01 — 8 November 2004 3 of 13 Philips Semiconductors PHP/PHB33NQ20T N-channel TrenchMOS™ standard level FET Fig 1. Normalized total power dissipation as a function of mounting base temperature. Fig 2. Normalized continuous drain current as a function of mounting base temperature. Tmb =2 5°C; IDM is single pulse; VGS =1 0V Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage. 03aa16 120 0 50 100 150 200 Tmb (°C) Pder (%) 03aa24 120 0 50 100 150 200 Tmb (°C) Ider (%) P der P tot P tot 25 C°() ID I D2 5C°() 03ao10 10-1 1 10 10 2 103 VDS (V) ID (A) DC 100 µ s 10 ms Limit RDSon = VDS / ID 1 ms tp = 10 µ s
9397 750 14003 © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Product data sheet Rev. 01 — 8 November 2004 4 of 13 Philips Semiconductors PHP/PHB33NQ20T N-channel TrenchMOS™ standard level FET 5. Thermal characteristics
5.1 Transient thermal impedance
Table 4: Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit R th(j-mb) thermal resistance from junction to mounting baseFigure4 - - 0.65 K/W R th(j-a) thermal resistance from junction to ambient SOT78 vertical in free air - 60 - K/W SOT404 mounted on a printed-circuit board; minimum footprint; vertical in still air - 50 - K/W Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration. 03ao09 10-3 10-2 10-1 10-5 10-4 10-3 10-2 10-1 1 tp (s) Zth(j-mb) (K/W) single pulse δ = 0.5 0.2 0.1 0.05 0.02 tp T P t tp Tδ =
9397 750 14003 © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Product data sheet Rev. 01 — 8 November 2004 5 of 13 Philips Semiconductors PHP/PHB33NQ20T N-channel TrenchMOS™ standard level FET 6. Characteristics Table 5: Characteristics Tj=2 5°C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit Static characteristics V (BR)DSS drain-source breakdown voltage ID = 250µA; VGS =0V Tj=2 5°C 200 - - V Tj= −55 °C 180 - - V VGS(th) gate-source threshold voltage ID = 1 mA; VDS =V GS ;Figure9 and 10 Tj=2 5°C 234V Tj= 175°C 1 --V IDSS drain-source leakage current V DS = 160 V; VGS =0V Tj=2 5°C --1 µA Tj= 175°C - - 500 µA IGSS gate-source leakage current V GS = ±20 V; VDS = 0 V - 10 100 nA R DSon drain-source on-state resistance VGS = 10 V; ID =1 5A ;Figure6 and 8 Tj=2 5°C - 65 77 m Ω Tj= 175°C - 182 215 m Ω Dynamic characteristics Q g(tot) total gate charge I D = 25 A; VDS = 100 V; VGS =1 0V ; Figure11 - 32.2 - nC Q gs gate-source charge - 6.5 - nC Q gd gate-drain (Miller) charge - 9.6 - nC C iss input capacitance V GS =0V ; VDS = 25 V; f = 1 MHz; Figure13 -1 8 7 0 -p F C oss output capacitance - 230 - pF C rss reverse transfer capacitance - 70 - pF td(on) turn-on delay time V DS = 100 V; RL =4 Ω ; VGS =1 0V ;RG =6 Ω -1 2 -n s tr rise time -3 5 -n s td(off) turn-off delay time - 43 - ns tf fall time -4 5 -n s Source-drain diode V SD source-drain (diode forward) voltage IS = 25 A; VGS =0V ;Figure12 - 0.87 1.2 V trr reverse recovery time I S = 20 A; dIS/dt =−100 A/µs; VGS = 0 V - 150 - ns Q r recovered charge - 645 - nC
9397 750 14003 © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Product data sheet Rev. 01 — 8 November 2004 6 of 13 Philips Semiconductors PHP/PHB33NQ20T N-channel TrenchMOS™ standard level FET Tj=2 5°CT j=2 5°C Fig 5. Output characteristics: drain current as a function of drain-source voltage; typical values. Fig 6. Drain-source on-state resistance as a function of drain current; typical values. Tj=2 5°C and 175°C; VDS >ID × R DSon Fig 7. Transfer characteristics: drain current as a function of gate-source voltage; typical values. Fig 8. Normalized drain-source on-state resistance factor as a function of junction temperature. 03ao11 012345 V DS (V) ID (A) Tj = 25 °C VGS = 3.8 V 10 V 4 V 4.2 V 4.4 V 4.6 V 5 V 03ao12 100 125 0 1 02 03 04 0 I D (A) R DSon (mΩ ) 4.6 VVGS = 4.4 V Tj = 25 °C 10 V 5 V 03ao13 0246 V GS (V) ID (A) VDS > ID x RDSon Tj = 25 °C175 °C 03al52 -60 0 60 120 180 a Tj (°C) a R DSon R DSon 25 C°()
9397 750 14003 © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Product data sheet Rev. 01 — 8 November 2004 7 of 13 Philips Semiconductors PHP/PHB33NQ20T N-channel TrenchMOS™ standard level FET ID = 1 mA; VDS =V GS Tj=2 5°C; VDS =5V Fig 9. Gate-source threshold voltage as a function of junction temperature. Fig 10. Sub-threshold drain current as a function of gate-source voltage. ID = 25 A; VDS = 40 V, 100 V and 160 V Fig 11. Gate-source voltage as a function of gate charge; typical values. 03aa32 -60 0 60 120 180 Tj (°C) VGS(th) (V) max min typ 03aa35 10-6 10-5 10-4 10-3 10-2 10-1
0246 VGS (V)
(A) maxtypmin 03ao16 0 1 02 03 04 0 Q G (nC) VGS (V) ID = 25 A Tj = 25 °C VDS = 40 V 100 V 160 V
9397 750 14003 © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Product data sheet Rev. 01 — 8 November 2004 8 of 13 Philips Semiconductors PHP/PHB33NQ20T N-channel TrenchMOS™ standard level FET Tj=2 5°C and 175°C; VGS =0V V GS = 0 V; f = 1 MHz Fig 12. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values. Fig 13. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values. 03ao14 0 0.3 0.6 0.9 1.2 V SD (V) IS (A) Tj = 25 °C175 °C VGS = 0 V 03ao15 102 103 104 10-1 1 10 10 2 VDS (V) C (pF) C iss C oss C rss
9397 750 14003 © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Product data sheet Rev. 01 — 8 November 2004 9 of 13 Philips Semiconductors PHP/PHB33NQ20T N-channel TrenchMOS™ standard level FET 7. Package outline Fig 14. SOT78 (TO-220AB) package outline. REFERENCESOUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE IEC JEDEC JEITA SOT78 SC-46 3-lead TO-220AB D D 1 q p L 123 L1(1) e e b 0 5 10 mm scale Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB SOT78 DIMENSIONS (mm are the original dimensions) AE c Note 1. Terminals in this zone are not tinned. Q UNIT A 1 b1 D 1 e p mm 2.54 qQA b Dc L2 max. 3.0 3.8 3.6 15.0 13.5 3.30 2.79 3.0 2.7 2.6 2.2 0.7 0.4 15.8 15.2 0.9 0.6 1.3 1.0 4.5 4.1 1.39 1.27 6.4 5.9 10.3 9.7 L1(1)E L 01-02-16 03-01-22 mounting base
9397 750 14003 © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Product data sheet Rev. 01 — 8 November 2004 10 of 13 Philips Semiconductors PHP/PHB33NQ20T N-channel TrenchMOS™ standard level FET Fig 15. SOT404 (D2-PAK) package outline. UNIT A REFERENCESOUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE IEC JEDEC JEITA mm A 1 D 1 D max. E eL p H D Qc 2.54 2.60 2.20 15.80 14.80 2.90 2.1011 1.60 1.20 10.30 9.70 4.50 4.10 1.40 1.27 0.85 0.60 0.64 0.46 b DIMENSIONS (mm are the original dimensions) SOT404 0 2.5 5 mm scale Plastic single-ended surface mounted package (D2-PAK); 3 leads (one lead cropped) SOT404 e e E b D 1 H D D Q Lp c A mounting base 01-02-12 04-10-13
Philips Semiconductors PHP/PHB33NQ20T N-channel TrenchMOS™ standard level FET 9397 750 14003 © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Product data sheet Rev. 01 — 8 November 2004 11 of 13 8. Revision history Table 6: Revision history Document ID Release date Data sheet status Change notice Doc. number Supersedes PHP_PHB33NQ20T_1 20041108 Product data sheet - 9397 750 14003 -
Philips Semiconductors PHP/PHB33NQ20T N-channel TrenchMOS™ standard level FET 9397 750 14003 © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Product data sheet Rev. 01 — 8 November 2004 12 of 13 9. Data sheet status [1] Please consult the most recently issued data sheet before initiating or completing a design. [2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. [3] For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. 10. Definitions Short-form specification —The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 11. Disclaimers Life support —These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes —Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. 12. Trademarks TrenchMOS — is a trademark of Koninklijke Philips Electronics N.V. 13. Contact information For additional information, please visit: http://www.semiconductors.philips.com For sales office addresses, send an email to: sales.addresses@www.semiconductors.philips.com Level Data sheet status[1] Product status[2][3] Definition I Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. III Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN).
© Koninklijke Philips Electronics N.V. 2004 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 8 November 2004 Document number: 9397 750 14003 Published in The Netherlands Philips Semiconductors PHP/PHB33NQ20T N-channel TrenchMOS™ standard level FET 14. Contents