PHP165NQ08T

PHP165NQ08T NEXPERIA | Alldatasheet

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Technical content

Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. use http://www.nexperia.com salesaddresses@nexperia.com (email) Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on the version, as shown below: reserved Should be replaced with: - © Nexperia B.V. (year). All rights reserved. If you have any questions related to the data sheet, please contact our nearest sales office via e -mail or telephone (details via salesaddresses@nexperia.com). Thank you for your cooperation and understanding, Kind regards, Team Nexperia

1.1 General description

package using TrenchMOS technology.

1.2 Features and benefits

1.3 Applications

1.4 Quick reference data

Table 1. Quick reference

PHP165NQ08T_2 © NXP B.V. 2009. All rights reserved. Table 2. Pinning information Table 3. Ordering information

PHP165NQ08T_2 © NXP B.V. 2009. All rights reserved. Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).

PHP165NQ08T_2 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 — 27 March 2009 4 of 13 NXP Semiconductors PHP165NQ08T N-channel TrenchMOS SiliconMAX standard level FET Fig 1. Normalized continuous drain current as a function of mounting base temperature Fig 2. Normalized total power dissipation as a function of mounting base temperature Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage 003aac592 100 125 0 50 100 150 200 Tj (°C) Ider (%) 003aac591 120 0 50 100 150 200 Tj (°C) Pder (%) 003aac600 10-1 102 103 10-1 1 10 10 2 VDS (V) ID (A) 10 μstp = DC 1 ms 100 μs Limit RDSon = VDS / ID 10 ms 100 ms

PHP165NQ08T_2 © NXP B.V. 2009. All rights reserved. Table 5. Thermal characteristics

PHP165NQ08T_2 © NXP B.V. 2009. All rights reserved. Table 6. Characteristics

PHP165NQ08T_2 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 — 27 March 2009 7 of 13 NXP Semiconductors PHP165NQ08T N-channel TrenchMOS SiliconMAX standard level FET Fig 5. Output characteristics: drain current as a function of drain-source voltage; typical values Fig 6. Transfer characteristics: drain current as a function of gate-source voltage; typical values Fig 7. Input and reverse transfer capacitances as a function of gate-source voltage; typical values Fig 8. Gate-source threshold voltage as a function of junction temperature 003aac603 120 180 240 300 00 . 511 . 52 V DS (V) ID (A) VGS = 5 V 5.5 V 6 V 6.5 V 7 V7.5 V 8 V 8.5 V 10 V 20 V 003aac593 100 0246 V GS (V) ID (A) Tj = 150 °C 25 °C 003aac597 103 104 105 10-1 1 10 VGS (V) C (pF) Ciss Crss 003aac594 -60 0 60 120 180 T j (°C) VGS(th) (V) max typ min

PHP165NQ08T_2 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 — 27 March 2009 8 of 13 NXP Semiconductors PHP165NQ08T N-channel TrenchMOS SiliconMAX standard level FET Fig 9. Sub-threshold drain current as a function of gate-source voltage Fig 10. Drain-source on-state resistance as a function of drain current; typical values Fig 11. Normalized drain-source on-state resistance factor as a function of junction temperature Fig 12. Gate charge waveform definitions 003aac595 10-5 10-4 10-3 10-2 10-1

0246 VGS (V)

(A) maxtypmin 003aac602 0 60 120 180 240 300 I D (A) RDSon (mΩ) VGS = 5 V 7 V 5.5 V 6 V 6.5 V 7.5 V8 V8.5 V10 V Tj (°C) −60 180 12006 0 03aj03 1.5 0.5 2.5 a 003aaa5 08 VGS VGS(th) QGS1 QGS2 QGD VDS QG(tot) ID QGS VGS(pl)

PHP165NQ08T_2 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 — 27 March 2009 9 of 13 NXP Semiconductors PHP165NQ08T N-channel TrenchMOS SiliconMAX standard level FET Fig 13. Gate-source voltage as a function of gate charge; typical values Fig 14. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values Fig 15. Source current as a function of source-drain voltage; typical values 003aac599 2.5 7.5 0 50 100 150 200 QG (nC) VGS (V) ID = 75A Tj = 25 °C VDS = 60 V 14 V 003aac596 102 103 104 105 10-1 1 10 10 2 VDS (V) C (pF) Ciss Crss Coss 003aac598 100 0 0.25 0.5 0.75 1 V SD (V) IS (A) Tj = 150 °C 25 °C

PHP165NQ08T_2 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 — 27 March 2009 10 of 13 NXP Semiconductors PHP165NQ08T N-channel TrenchMOS SiliconMAX standard level FET 7. Package outline Fig 16. Package outline SOT78 (TO-220AB) REFERENCESOUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE IEC JEDEC JEITA SOT78 SC-46 3-lead TO-220AB SOT78 08-04-23 08-06-13 Notes 1. Lead shoulder designs may vary. 2. Dimension includes excess dambar. UNIT A mm 4.7 4.1 1.40 1.25 0.9 0.6 0.7 0.4 16.0 15.2 6.6 5.9 10.3 9.7 15.0 12.8 3.30 2.79 3.8 3.5 A DIMENSIONS (mm are the original dimensions) Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB 0 5 10 mm scale b b1(2) 1.6 1.0 c D 1.3 1.0 b2(2) D1 E e 2.54 L L1(1) L2(1) max. 3.0 p q 3.0 2.7 Q 2.6 2.2 D q p L 123 L1(1) b1(2) (3×) b2(2) (2×) e e b(3×) AE c Q L2(1) mounting base

PHP165NQ08T_2 © NXP B.V. 2009. All rights reserved. Table 7. Revision history

• Maximum value of thermal resistance from junction to mounting base updated. PHP165NQ08T_1 20090310 Product data sheet - -

PHP165NQ08T_2 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 — 27 March 2009 12 of 13 NXP Semiconductors PHP165NQ08T N-channel TrenchMOS SiliconMAX standard level FET 9. Legal information

9.1 Data sheet status

[1] Please consult the most recently issued document before initiating or completing a design. [2] The term 'short data sheet' is explained in section "Definitions". [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com.

9.2 Definitions

Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail.

9.3 Disclaimers

General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms , including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as th e item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities.

9.4 Trademarks

Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. TrenchMOS — is a trademark of NXP B.V. 10. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Document status [1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This doc ument contains the product specification.

NXP Semiconductors PHP165NQ08T N-channel TrenchMOS SiliconMAX standard level FET © NXP B.V. 2009. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 27 March 2009 Document identifier: PHP165NQ08T_2 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. 11. Contents