PHP125

PHP125 PHILIPS | Alldatasheet

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Technical content

Product specification Supersedes data of 1996 Apr 02 File under Discrete Semiconductors, SC13b

1997 Jun 18

P-channel enhancement mode MOS transistor

1997 Jun 18 2

Philips Semiconductors Product specification P-channel enhancement mode MOS transistor PHP125

FEATURES

• High-speed switching
• No secondary breakdown
• Very low on-resistance.

APPLICATIONS

• Motor and actuator driver
• Power management
• Synchronized rectification.

DESCRIPTION

P-channel enhancement mode MOS transistor in an 8-pin plastic SO8 (SOT96-1) package. PINNING - SO8 (SOT96-1) PIN SYMBOL DESCRIPTION 1 n.c. not connected 2 s source 3 s source 4 g gate 5 d drain 6 d drain 7 d drain 8 d drain CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against static discharge during transport or handling. Fig.1 Simplified outline and symbol. handbook, halfpage d MAM115 1 4 ddd sn.c. gs QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS drain-source voltage (DC) −− 30 V VSD source-drain diode forward voltage IS = −1.25 A −− 1.6 V VGS gate-source voltage (DC) −± 20 V VGSth gate-source threshold voltage I D = −1 mA; VDS =V GS −1 −2.8 V ID drain current (DC) T s =8 0°C −− 2.5 A R DSon drain-source on-state resistance ID = −1 A; VGS = −10 V − 0.25 Ω Ptot total power dissipation T s =8 0°C − 2.8 W

1997 Jun 18 3

Philips Semiconductors Product specification P-channel enhancement mode MOS transistor PHP125 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). Notes 1. Ts is the temperature at the soldering point of the drain lead. 2. Pulse width and duty cycle limited by maximum junction temperature. 3. Value based on a printed-circuit board with a R th a-tp(ambient to tie-point) of 27.5 K/W. 4. Value based on a printed-circuit board with a Rth a-tp(ambient to tie-point) of 90 K/W. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS drain-source voltage (DC) −− 30 V VGS gate-source voltage (DC) −± 20 V ID drain current (DC) T s =8 0°C; note 1 −− 2.5 A IDM peak drain current note 2 −− 10 A Ptot total power dissipation T s =8 0°C − 2.8 W Tamb =2 5°C; note 3 − 2.4 W Tamb =2 5°C; note 4 − 1.1 W Tstg storage temperature −65 +150 °C Tj operating junction temperature −65 +150 °C Source-drain diode IS source current (DC) T s =8 0°C −− 2A ISM peak pulsed source current note 2 −− 8A Fig.2 Power derating curve. handbook, halfpage 50 100 200 Ptot (W) MBG848

150 Ts (oC)

(1) RDSon limitation. Fig.3 SOAR. handbook, halfpage MBG752 ID (A) tp T P t tp Tδ = 1 ms 10 ms 100 ms 100 µs DC (1) tp = 10 µs −10−2 −10−1 −10 −102

1997 Jun 18 4

Philips Semiconductors Product specification P-channel enhancement mode MOS transistor PHP125 THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT R th j-s thermal resistance from junction to soldering point 25 K/W Fig.4 Transient thermal resistance from junction to soldering point as a function of pulse time; typical values. handbook, full pagewidth102 10−1 10−6 10−5 10−4 10−3 10−2 10−1 1tp (s) MBG753 R th j−s (K/W) tp T P t tp Tδ = δ = 0.75 0.5 0.1 0.05 0.33 0.01 0.02 0.2

1997 Jun 18 5

Philips Semiconductors Product specification P-channel enhancement mode MOS transistor PHP125 CHARACTERISTICS Tj=2 5°C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V(BR)DSS drain-source breakdown voltage VGS = 0; ID = −10 µA −30 −− V VGSth gate-source threshold voltage VGS =V DS ; ID = −1m A −1 −− 2.8 V IDSS drain-source leakage current V GS = 0; VDS = −24 V −−− 100 nA IGSS gate leakage current V GS = ±20 V; VDS =0 −−± 100 nA R DSon drain-source on-state resistance VGS = −4.5 V; ID = −0.5 A − 0.33 0.4 Ω VGS = −10 V; ID = −1A − 0.22 0.25 Ω C iss input capacitance V GS = 0; VDS = −24 V; f = 1 MHz− 250 − pF C oss output capacitance V GS = 0; VDS = −24 V; f = 1 MHz− 140 − pF C rss reverse transfer capacitance V GS = 0; VDS = −24 V; f = 1 MHz− 50 − pF Q G total gate charge V GS = −10 V; VDS = −15 V; ID = −1A − 10 25 nC Q GS gate-source charge V GS = −10 V; VDS = −15 V; ID = −1A − 1 − nC Q GD gate-drain charge V GS = −10 V; VDS = −15 V; ID = −1A − 3 − nC Switching times(see Fig.11) td(on) turn-on delay time V GS =0t o−10 V; VDD = −15 V; ID = −1 A; RL =1 5Ω ; Rgen =6 Ω − 4.5 − ns tf fall time − 3.5 − ns ton turn-on switching time − 81 6 n s td(off) turn-off delay time V GS =−10 to 0 V; VDD = −15 V; ID = −1 A; RL =1 5Ω ; Rgen =6 Ω − 25 − ns tr rise time − 15 − ns toff turn-off switching time − 40 80 ns Source-drain diode VSD source-drain forward voltage V GD = 0; IS = −1.25 A −−− 1.6 V trr reverse recovery time I S = −1.25 A; di/dt = 100 A/µs − 150 200 ns

1997 Jun 18 6

Philips Semiconductors Product specification P-channel enhancement mode MOS transistor PHP125 Fig.5 Gate-source voltage as a function of total gate charge; typical values. VDD = −15 V: ID = −1A . handbook, halfpage 0 −2 −4 −8 −10 −10 MBG754 Q g (nC) VGS (V) Fig.6 Output characteristics; typical values. Tj=2 5°C. handbook, halfpage 0 −2 −10 −10 −12 MBG756 −4 −6 −8 VDS (V) ID (A) VGS = −10 V −7.5 V −6 V −4.5 V −5 V −4 V −3.5 V −3 V −2.5 V Fig.7 Transfer characteristics; typical values. VDS = −10 V; Tj=2 5°C. handbook, halfpage 0 −2 −4 −8 −10 MBG757 ID (A) VGS (V) Fig.8 Source current as a function of source-drain diode forward voltage; typical values. handbook, halfpage MBG758 IS (A) VSD (V) (1) (2) (3) VGD =0 . (1) Tj= 150°C. (2) Tj=2 5°C. (3) Tj= −65 °C.

1997 Jun 18 7

Philips Semiconductors Product specification P-channel enhancement mode MOS transistor PHP125 Fig.9 Drain source on-resistance as a function of gate-source voltage; typical values. VDS ≥ ID × R DSon ; Tj=2 5°C. handbook, halfpage −10 VGS (V) MBG849 104 103 102 −2 −4 −6 R DSon (mΩ ) ID = 100 mA 500 mA 1 A 2 A 3.4 A Fig.10 Capacitance as a function of drain-source voltage; typical values. VGS = 0; f = 1 MHz; Tj=2 5°C. handbook, halfpage 600 400 200 −8 −16 −24VDS (V) C iss C oss C rss C (pF) MBG850 Fig.11 Switching time test circuit and input and output waveforms. handbook, full pagewidth MGD391 10 % 90 % Vin Vout td(on) ton toff tr tf td(off) 10 % 90 % 10 % 90 % −VDD R L Vout Vin

1997 Jun 18 8

Philips Semiconductors Product specification P-channel enhancement mode MOS transistor PHP125 Fig.12 Temperature coefficient of gate-source threshold voltage; typical values. Typical VGSth at: (1) ID = −1 mA; VDS =VGS . k V GSth at Tj handbook, halfpage 0.6 0.7 0.8 0.9 1.0 1.2 1.1 k MBG759 25 75 175 125−75 −25 Tj (oC) Fig.13 Temperature coefficient of drain-source on-resistance; typical values. Typical RDSon at: (1) ID = −1 A; VGS = −10 V. k R DSon at Tj handbook, halfpage 0.6 0.8 1.0 1.2 1.4 1.8 1.6 25 75 175 125−75 −25 k Tj ( oC) MBG760 (1) (2)

1997 Jun 18 9

Philips Semiconductors Product specification P-channel enhancement mode MOS transistor PHP125 PACKAGE OUTLINE UNIT A max. A 1 A 2 A 3 bp cD (1) E (2) (1)eH E LL p QZ ywv θ REFERENCESOUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE IEC JEDEC EIAJ mm inches 1.75 0.25 0.10 1.45 1.25 0.25 0.49 0.36 0.25 0.19 5.0 4.8 4.0 3.8 1.27 6.2 5.8 1.05 0.7 0.6 0.7 0.3 8 o o 0.25 0.10.25 DIMENSIONS (inch dimensions are derived from the original mm dimensions) Notes 1. Plastic or metal protrusions of 0.15 mm maximum per side are not included. 2. Plastic or metal protrusions of 0.25 mm maximum per side are not included. 1.0 0.4 SOT96-1 X w M θ AA 1 A 2 bp D H E Lp Q detail X E Z e c L v M A (A )3 A pin 1 index y 076E03S MS-012AA 0.069 0.010 0.004 0.057 0.049 0.01 0.019 0.014 0.0100 0.0075 0.20 0.19 0.16 0.15 0.050 0.244 0.228 0.028 0.024 0.028 0.016 0 2.5 5 mm scale SO8: plastic small outline package; 8 leads; body width 3.9 mm SOT96-1 95-02-04 97-05-22

1997 Jun 18 10

Philips Semiconductors Product specification P-channel enhancement mode MOS transistor PHP125 DEFINITIONS LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

1997 Jun 18 11

Philips Semiconductors Product specification P-channel enhancement mode MOS transistor PHP125 NOTES

Internet: http://www.semiconductors.philips.com Philips Semiconductors – a worldwide company © Philips Electronics N.V. 1997 SCA54 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB, Tel. +31 40 27 82785, Fax. +31 40 27 88399 New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND, Tel. +64 9 849 4160, Fax. +64 9 849 7811 Norway: Box 1, Manglerud 0612, OSLO, Tel. +47 22 74 8000, Fax. +47 22 74 8341 Philippines: Philips Semiconductors Philippines Inc., 106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI, Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474 Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA, Tel. +48 22 612 2831, Fax. +48 22 612 2327 Portugal: see Spain Romania: see Italy Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW, Tel. +7 095 755 6918, Fax. +7 095 755 6919 Singapore: Lorong 1, Toa Payoh, SINGAPORE 1231, Tel. +65 350 2538, Fax. +65 251 6500 Slovakia: see Austria Slovenia: see Italy South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale, 2092 JOHANNESBURG, P.O. Box 7430 Johannesburg 2000, Tel. +27 11 470 5911, Fax. +27 11 470 5494 South America: Rua do Rocio 220, 5th floor, Suite 51, 04552-903 São Paulo, SÃO PAULO - SP, Brazil, Tel. +55 11 821 2333, Fax. +55 11 829 1849 Spain: Balmes 22, 08007 BARCELONA, Tel. +34 3 301 6312, Fax. +34 3 301 4107 Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM, Tel. +46 8 632 2000, Fax. +46 8 632 2745 Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH, Tel. +41 1 488 2686, Fax. +41 1 481 7730 Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1, TAIPEI, Taiwan Tel. +886 2 2134 2865, Fax. +886 2 2134 2874 Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd., 209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260, Tel. +66 2 745 4090, Fax. +66 2 398 0793 Turkey: Talatpasa Cad. No. 5, 80640 GÜLTEPE/ISTANBUL, Tel. +90 212 279 2770, Fax. +90 212 282 6707 Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7, 252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461 United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes, MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421 United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409, Tel. +1 800 234 7381 Uruguay: see South America Vietnam: see Singapore Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD, Tel. +381 11 625 344, Fax.+381 11 635 777 For all other countries apply to: Philips Semiconductors, Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria:Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 1 60 101, Fax. +43 1 60 101 1210 Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6, 220050 MINSK, Tel. +375 172 200 733, Fax. +375 172 200 773 Belgium: see The Netherlands Brazil:see South America Bulgaria:Philips Bulgaria Ltd., Energoproject, 15th floor, 51 James Bourchier Blvd., 1407 SOFIA, Tel. +359 2 689 211, Fax. +359 2 689 102 Canada: PHILIPS SEMICONDUCTORS/COMPONENTS, Tel. +1 800 234 7381 China/Hong Kong: 501 Hong Kong Industrial Technology Centre,

72 Tat Chee Avenue, Kowloon Tong, HONG KONG,

Tel. +852 2319 7888, Fax. +852 2319 7700 Colombia: see South America Czech Republic: see Austria Denmark: Prags Boulevard 80, PB 1919, DK-2300 COPENHAGEN S, Tel. +45 32 88 2636, Fax. +45 31 57 0044 Finland: Sinikalliontie 3, FIN-02630 ESPOO, Tel. +358 9 615800, Fax. +358 9 61580920 France: 4 Rue du Port-aux-Vins, BP317, 92156 SURESNES Cedex, Tel. +33 1 40 99 6161, Fax. +33 1 40 99 6427 Germany: Hammerbrookstraße 69, D-20097 HAMBURG, Tel. +49 40 23 53 60, Fax. +49 40 23 536 300 Greece: No. 15, 25th March Street, GR 17778 TAVROS/ATHENS, Tel. +30 1 4894 339/239, Fax. +30 1 4814 240 Hungary: see Austria India: Philips INDIA Ltd, Shivsagar Estate, A Block, Dr. Annie Besant Rd. Worli, MUMBAI 400 018, Tel. +91 22 4938 541, Fax. +91 22 4938 722 Indonesia: see Singapore Ireland: Newstead, Clonskeagh, DUBLIN 14, Tel. +353 1 7640 000, Fax. +353 1 7640 200 Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053, TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007 Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3, 20124 MILANO, Tel. +39 2 6752 2531, Fax. +39 2 6752 2557 Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, TOKYO 108, Tel. +81 3 3740 5130, Fax. +81 3 3740 5077 Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL, Tel. +82 2 709 1412, Fax. +82 2 709 1415 Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR, Tel. +60 3 750 5214, Fax. +60 3 757 4880 Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905, Tel. +9-5 800 234 7381 Middle East: see Italy Printed in The Netherlands 137107/00/03/pp12 Date of release: 1997 Jun 18 Document order number: 9397 750 02383