PHP11N50E PHILIPS | Alldatasheet
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Philips Semiconductors Preliminary specification PowerMOS transistors PHP11N50E, PHB11N50E, PHW11N50E Avalanche energy rated FEATURES SYMBOL QUICK REFERENCE DATA
- Repetitive Avalanche Rated
- Fast switching VDSS = 500 V
- Stable off-state characteristics
- High thermal cycling performance ID = 10.4 A
- Low thermal resistance R DS(ON) ≤ 0.6 Ω GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, applications. The PHP11N50E is supplied in the SOT78 (TO220AB) conventional leaded package. The PHW11N50E is supplied in the SOT429 (TO247) conventional leaded package. The PHB11N50E is supplied in the SOT404 surface mounting package. PINNING SOT78 (TO220AB) SOT404 SOT429 (TO247) PIN DESCRIPTION 1 gate 2 drain 1 3 source tab drain LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V DSS Drain-source voltage T j = 25 ˚C to 150˚C - 500 V VDGR Drain-gate voltage T j = 25 ˚C to 150˚C; RGS = 20 kΩ - 500 V VGS Gate-source voltage - ± 30 V ID Continuous drain current Tmb = 25 ˚C; VGS = 10 V - 10.4 A Tmb = 100 ˚C; VGS = 10 V - 6.6 A IDM Pulsed drain current T mb = 25 ˚C - 42 A PD Total dissipation T mb = 25 ˚C - 156 W Tj, Tstg Operating junction and - 55 150 ˚C storage temperature range d g s 12 3 tab tab 2 31 1 It is not possible to make connection to pin 2 of the SOT404 package. January 1998 1 Rev 1.000
Philips Semiconductors Preliminary specification PowerMOS transistors PHP11N50E, PHB11N50E, PHW11N50E Avalanche energy rated AVALANCHE ENERGY LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT E AS Non-repetitive avalanche Unclamped inductive load, ID = 10.4 A; - 676 mJ energy V DD ≤ 50 V; starting Tj = 25˚C; RGS = 50 Ω ; VGS = 10 V EAR Repetitive avalanche energy2 - 16.9 mJ IAS , IAR Repetitive and non-repetitive - 10.4 A avalanche current THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT R th j-mb Thermal resistance junction - - 0.8 K/W to mounting base R th j-a Thermal resistance junction SOT78 package, in free air - 60 - K/W to ambient SOT429 package, in free air - 45 - K/W SOT404 package, pcb mounted, minimum - 50 - K/W footprint
ELECTRICAL CHARACTERISTICS
Tj = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V (BR)DSS Drain-source breakdown V GS = 0 V; ID = 0.25 mA 500 - - V voltage ΔV(BR)DSS / Drain-source breakdown V DS = VGS ; ID = 0.25 mA - 0.1 - %/K ΔTj voltage temperature coefficient R DS(ON) Drain-source on resistance VGS = 10 V; ID = 5.2 A - 0.5 0.6 Ω VGS(TO) Gate threshold voltage V DS = VGS ; ID = 0.25 mA 2.0 3.0 4.0 V gfs Forward transconductance VDS = 30 V; ID = 5.2 A 4 7 - S IDSS Drain-source leakage current VDS = 500 V; VGS = 0 V - 1 25 µA VDS = 400 V; VGS = 0 V; Tj = 125 ˚C - 60 500 µA IGSS Gate-source leakage current VGS = ±30 V; VDS = 0 V - 10 200 nA Q g(tot) Total gate charge I D = 10.4 A; VDD = 400 V; VGS = 10 V - 120 150 nC Q gs Gate-source charge - 8 10 nC Q gd Gate-drain (Miller) charge - 65 85 nC td(on) Turn-on delay time V DD = 250 V; RD = 22 Ω ; - 22 - ns tr Turn-on rise time R G = 5.6 Ω -7 0-n s td(off) Turn-off delay time - 145 - ns tf Turn-off fall time - 84 - ns Ld Internal drain inductance Measured from tab to centre of die - 3.5 - nH Ld Internal drain inductance Measured from drain lead to centre of die - 4.5 - nH (SOT78 and SOT429 packages only) Ls Internal source inductance Measured from source lead to source - 7.5 - nH bond pad C iss Input capacitance V GS = 0 V; VDS = 25 V; f = 1 MHz - 1400 - pF C oss Output capacitance - 220 - pF C rss Feedback capacitance - 125 - pF 2 pulse width and repetition rate limited by Tj max. January 1998 2 Rev 1.000
Philips Semiconductors Preliminary specification PowerMOS transistors PHP11N50E, PHB11N50E, PHW11N50E Avalanche energy rated SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Tj = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT I S Continuous source current Tmb = 25˚C - - 10.4 A (body diode) ISM Pulsed source current (body Tmb = 25˚C - - 42 A diode) VSD Diode forward voltage I S = 10.4 A; VGS = 0 V - - 1.2 V trr Reverse recovery time I S = 10.4 A; VGS = 0 V; dI/dt = 100 A/µs - 600 - ns Q rr Reverse recovery charge - 9 - µC January 1998 3 Rev 1.000
Philips Semiconductors Preliminary specification PowerMOS transistors PHP11N50E, PHB11N50E, PHW11N50E Avalanche energy rated MECHANICAL DATA Dimensions in mm Net Mass: 2 g Fig.1. SOT78 (TO220AB); pin 2 connected to mounting base. Notes 1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent damage to MOS gate oxide. 2. Refer to mounting instructions for SOT78 (TO220) envelopes. 3. Epoxy meets UL94 V0 at 1/8". 10,3 max 3,7 2,8 3,03,0 max not tinned 1,3 max (2x) 123 2,4 0,6 4,5 max 5,9 min 15,8 max 1,3 2,54 2,54 0,9 max (3x) 13,5 min January 1998 4 Rev 1.000
Philips Semiconductors Preliminary specification PowerMOS transistors PHP11N50E, PHB11N50E, PHW11N50E Avalanche energy rated MECHANICAL DATA Dimensions in mm Net Mass: 1.4 g Fig.2. SOT404 : centre pin connected to mounting base. MOUNTING INSTRUCTIONS Dimensions in mm Fig.3. SOT404 : soldering pattern for surface mounting. Notes 1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent damage to MOS gate oxide. 2. Epoxy meets UL94 V0 at 1/8". 11 max 4.5 max 1.4 max 10.3 max 0.5 15.4 2.5 0.85 max (x2) 2.54 (x2) 17.5 11.5 9.0 5.08 3.8 2.0 January 1998 5 Rev 1.000
Philips Semiconductors Preliminary specification PowerMOS transistors PHP11N50E, PHB11N50E, PHW11N50E Avalanche energy rated MECHANICAL DATA Dimensions in mm Net Mass: 5 g Fig.4. SOT429; pin 2 connected to mounting base. Notes 1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent damage to MOS gate oxide. 2. Refer to mounting instructions for SOT429 envelope. 3. Epoxy meets UL94 V0 at 1/8". 5.3 4.0 max 15.5 min 1 2.2 max 0.4 2.5 0.9 max 5.3 max 3.5 16 max 5.45 seating plane 5.45 M o max 15.5 max 3.2 max 2 3 1.1 3.5 1.8 7.3 max January 1998 6 Rev 1.000
Philips Semiconductors Preliminary specification PowerMOS transistors PHP11N50E, PHB11N50E, PHW11N50E Avalanche energy rated DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 1998 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. January 1998 7 Rev 1.000