PHP10N60E PHILIPS | Alldatasheet
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Technical content
Philips Semiconductors Preliminary specification PowerMOS transistors PHP10N60E Avalanche energy rated FEATURES SYMBOL QUICK REFERENCE DATA
- Repetitive Avalanche Rated
- Fast switching VDSS = 600 V
- Stable off-state characteristics
- High thermal cycling performance ID = 9.6 A
- Low thermal resistance R DS(ON) ≤ 0.75 Ω GENERAL DESCRIPTION PINNING SOT78 (TO220AB) N-channel, enhancement mode PIN DESCRIPTION field-effect power transistor, intended for use in off-line switched 1 gate mode power supplies, T.V. and computer monitor power supplies, 2 drain d.c. to d.c. converters, motorcontrol circuits and general purpose 3 source switching applications. case drain The PHP10N60E is supplied in the SOT78 (TO220AB) conventional leaded package. LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V DSS Drain-source voltage T j = 25 ˚C to 150˚C - 600 V VDGR Drain-gate voltage T j = 25 ˚C to 150˚C; RGS = 20 kΩ - 600 V VGS Gate-source voltage - ± 30 V ID Continuous drain current Tmb = 25 ˚C; VGS = 10 V - 9.6 A Tmb = 100 ˚C; VGS = 10 V - 6.1 A IDM Pulsed drain current T mb = 25 ˚C - 38 A PD Total dissipation T mb = 25 ˚C - 167 W Tj, Tstg Operating junction and - 55 150 ˚C storage temperature range AVALANCHE ENERGY LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT E AS Non-repetitive avalanche Unclamped inductive load, IAS = 9.6 A; - 813 mJ energy t p = 0.2 ms; Tj prior to avalanche = 25˚C; VDD ≤ 50 V; RGS = 50 Ω ; VGS = 10 V EAR Repetitive avalanche energy1 IAR = 9.6 A; tp = 1 µs; Tj prior to - 28 mJ avalanche = 25˚C; RGS = 50 Ω ; VGS = 10 V IAS , IAR Repetitive and non-repetitive - 9.6 A avalanche current d g s 1 2 3 tab gate source drain drain 1 pulse width and repetition rate limited by Tj max. August 1998 1 Rev 1.000
Philips Semiconductors Preliminary specification PowerMOS transistors PHP10N60E Avalanche energy rated THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT R th j-mb Thermal resistance junction - - 0.75 K/W to mounting base R th j-a Thermal resistance junction - 60 - K/W to ambient
ELECTRICAL CHARACTERISTICS
Tj = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V (BR)DSS Drain-source breakdown V GS = 0 V; ID = 0.25 mA 600 - - V voltage ΔV(BR)DSS / Drain-source breakdown V DS = VGS ; ID = 0.25 mA - 0.1 - %/K ΔTj voltage temperature coefficient R DS(ON) Drain-source on resistance VGS = 10 V; ID = 4.4 A - 0.7 0.75 Ω VGS(TO) Gate threshold voltage V DS = VGS ; ID = 0.25 mA 2.0 3.0 4.0 V gfs Forward transconductance VDS = 30 V; ID = 4.4 A 4 5.5 - S IDSS Drain-source leakage current VDS = 600 V; VGS = 0 V - 2 100 µA VDS = 480 V; VGS = 0 V; Tj = 125 ˚C - 80 1000 µA IGSS Gate-source leakage current VGS = ±30 V; VDS = 0 V - 10 200 nA Q g(tot) Total gate charge I D = 8.7 A; VDD = 480 V; VGS = 10 V - 130 150 nC Q gs Gate-source charge - 8 10 nC Q gd Gate-drain (Miller) charge - 60 85 nC td(on) Turn-on delay time V DD = 300 V; RD = 33 Ω ; - 20 - ns tr Turn-on rise time R G = 5.6 Ω -5 5-n s td(off) Turn-off delay time - 160 - ns tf Turn-off fall time - 70 - ns Ld Internal drain inductance Measured from tab to centre of die - 3.5 - nH Ld Internal drain inductance Measured from drain lead to centre of die - 4.5 - nH Ls Internal source inductance Measured from source lead to source - 7.5 - nH bond pad C iss Input capacitance V GS = 0 V; VDS = 25 V; f = 1 MHz - 1500 - pF C oss Output capacitance - 200 - pF C rss Feedback capacitance - 112 - pF SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Tj = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT I S Continuous source current Tmb = 25˚C - - 9.6 A (body diode) ISM Pulsed source current (body Tmb = 25˚C - - 38 A diode) VSD Diode forward voltage I S = 9.6 A; VGS = 0 V - - 1.2 V trr Reverse recovery time I S = 9.6 A; VGS = 0 V; dI/dt = 100 A/µs - 740 - ns Q rr Reverse recovery charge - 9 - µC August 1998 2 Rev 1.000
Philips Semiconductors Preliminary specification PowerMOS transistors PHP10N60E Avalanche energy rated MECHANICAL DATA Dimensions in mm Net Mass: 2 g Fig.1. SOT78 (TO220AB); pin 2 connected to mounting base. Notes 1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent damage to MOS gate oxide. 2. Refer to mounting instructions for SOT78 (TO220) envelopes. 3. Epoxy meets UL94 V0 at 1/8". 10,3 max 3,7 2,8 3,03,0 max not tinned 1,3 max (2x) 123 2,4 0,6 4,5 max 5,9 min 15,8 max 1,3 2,54 2,54 0,9 max (3x) 13,5 min August 1998 3 Rev 1.000
Philips Semiconductors Preliminary specification PowerMOS transistors PHP10N60E Avalanche energy rated DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 1998 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. August 1998 4 Rev 1.000