PHK5NQ15T PHILIPS
Document overview
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Technical content
TrenchMOS™ standard level FET Rev. 01 — 20 January 2003 Product dataM3D315 1. Product profile
1.1 Description
N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. Product availability: PHK5NQ15T in SOT96-1 (SO8).
1.2 Features
■ Low on-state resistance ■ Surface mount package.
1.3 Applications
■ DC-DC primary side switching ■ General purpose switch.
1.4 Quick reference data
- Pinning information ■ VDS ≤ 150 V ■ ID ≤ 5A ■ Ptot≤ 6.25 W ■ R DSon ≤ 75 mΩ Table 1: Pinning - SOT96-1, simplified outline and symbol Pin Description Simplified outline Symbol 1,2,3 source (s) SOT96-1 4 gate (g) 5,6,7,8 drain (d) Top view MBK187 s d g MBB076
Philips Semiconductors PHK5NQ15T TrenchMOS™ standard level FET Product data Rev. 01 — 20 January 2003 2 of 12 9397 750 10774 © Koninklijke Philips Electronics N.V. 2003. All rights reserved. 3. Limiting values Table 2: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage (DC) 25 °C ≤ Tj≤ 150 °C - 150 V VDGR drain-gate voltage (DC) 25 °C ≤ Tj≤ 150 °C; RGS =2 0kΩ - 150 V VGS gate-source voltage (DC) - ±20 V ID drain current (DC) T sp =2 5°C; VGS =1 0V ;Figure 2and 3 -5 A Tsp = 100°C; VGS =1 0V ;Figure 2 - 3.23 A IDM peak drain current T sp =2 5°C; pulsed; tp ≤ 10 µs;Figure 3 -2 0 A Ptot total power dissipation T sp =2 5°C; Figure 1 - 6.25 W Tstg storage temperature −55 +150 °C Tj junction temperature −55 +150 °C Source-drain diode I S source (diode forward) current (DC) Tsp =2 5°C- 5 A ISM peak source (diode forward) current Tsp =2 5°C; pulsed; tp ≤ 10 µs - 20 A
Philips Semiconductors PHK5NQ15T TrenchMOS™ standard level FET Product data Rev. 01 — 20 January 2003 3 of 12 9397 750 10774 © Koninklijke Philips Electronics N.V. 2003. All rights reserved. VGS ≥ 10 V Fig 1. Normalized total power dissipation as a function of solder point temperature. Fig 2. Normalized continuous drain current as a function of solder point temperature. Tsp =2 5°C; IDM is single pulse. Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage. 03aa17 120 0 50 100 150 200 (%) Tsp (°C) Pder 03aa25 120 0 50 100 150 200 Tsp (°C) Ider (%) P der P tot P tot 25 C°() Ider ID I D2 5C°() 003aaa242 10-2 10-1 102 10-1 1 10 10 2 103 VDS (V) ID (A) DC 100 ms 10 ms 1 ms Limit RDSon = VDS /ID tp = 10 µs
Philips Semiconductors PHK5NQ15T TrenchMOS™ standard level FET Product data Rev. 01 — 20 January 2003 4 of 12 9397 750 10774 © Koninklijke Philips Electronics N.V. 2003. All rights reserved. 4. Thermal characteristics
4.1 Transient thermal impedance
Table 3: Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit R th(j-sp) thermal resistance from junction to solder pointFigure 4 --2 0 K / W R th(j-a) thermal resistance from junction to ambientminimum footprint; mounted on printed-circuit board - 70 - K/W Fig 4. Transient thermal impedance from junction to solder point as a function of pulse duration. 003aaa243 10-2 10-1 102 10-4 10-3 10-2 10-1 1 10 tp (s) Zth(j-sp) (K/W) single pulse δ = 0.5 0.2 0.1 0.05 0.02 tp tp T P t Tδ =
Philips Semiconductors PHK5NQ15T TrenchMOS™ standard level FET Product data Rev. 01 — 20 January 2003 5 of 12 9397 750 10774 © Koninklijke Philips Electronics N.V. 2003. All rights reserved. 5. Characteristics Table 4: Characteristics Tj=2 5°C unless otherwise specified Symbol Parameter Conditions Min Typ Max Unit Static characteristics V (BR)DSS drain-source breakdown voltage ID = 250µA; VGS =0V Tj=2 5°C 150 - - V Tj= −55 °C 134 - - V VGS(th) gate-source threshold voltage ID = 1 mA; VDS =V GS ;Figure 9 Tj=2 5°C 234V IDSS drain-source leakage current V DS = 120 V; VGS =0V Tj=2 5°C --1 µA Tj= 150°C - - 100 µA IGSS gate-source leakage current V GS = ±10 V; VDS = 0 V - 10 100 nA R DSon drain-source on-state resistance VGS = 10 V; ID =5A ;Figure 7and 8 Tj=2 5°C - 56 75 m Ω Tj= 150°C - 129 173 m Ω VGS =5V ; ID = 3 A - 6 08 0m Ω Dynamic characteristics Q g(tot) total gate charge I D = 5 A; VDD =7 5V ; VGS =1 0V ;Figure 13 -2 9 -n C Q gs gate-source charge - 3 - nC Q gd gate-drain (Miller) charge - 12 - nC C iss input capacitance V GS =0V ; VDS = 25 V; f = 1 MHz;Figure 12 - 1150 - pF C oss output capacitance - 187 - pF C rss reverse transfer capacitance - 61 - pF td(on) turn-on delay time V DD =7 5V ; ID = 5A; VGS =1 0V ; RG =6 Ω -1 2 -n s tr rise time -1 2 -n s td(off) turn-off delay time - 35 - ns tf fall time -1 8 -n s Source-drain diode V SD source-drain (diode forward) voltage IS = 5 A; VGS =0V ;Figure 11 - 0.8 1.2 V trr reverse recovery time I S = 5 A; dIS/dt =−100 A/µs; VR =9 0V ; VGS =0V -8 7 -n s Q r recovered charge - 162 - nC
Philips Semiconductors PHK5NQ15T TrenchMOS™ standard level FET Product data Rev. 01 — 20 January 2003 6 of 12 9397 750 10774 © Koninklijke Philips Electronics N.V. 2003. All rights reserved. Tj=2 5°CT j=2 5°C and 150°C; VDS > ID × R DSon Fig 5. Output characteristics: drain current as a function of drain-source voltage; typical values. Fig 6. Transfer characteristics: drain current as a function of gate-source voltage; typical values. Tj=2 5°C Fig 7. Drain-source on-state resistance as a function of drain current; typical values. Fig 8. Normalized drain-source on-state resistance factor as a function of junction temperature. 003aaa244 0 0.5 1 1.5 2 VDS (V) ID (A) 3.0 V 3.2 V 3.8 V10 V VGS = 3.6 V 3.4 V 003aaa245 234 (A) ID VGS (V) Tj = 150 °C 25 °C 003aaa246 100 150 200
02468 ID (A)
3.4 V 3.6 V 3.8 V (mΩ ) VGS = 5 V 03al51 0.5 1.5 2.5 -60 0 60 120 180 Tj (°C) a a R DSon R DSon 25 C°()
Philips Semiconductors PHK5NQ15T TrenchMOS™ standard level FET Product data Rev. 01 — 20 January 2003 7 of 12 9397 750 10774 © Koninklijke Philips Electronics N.V. 2003. All rights reserved. ID = 1 mA; VDS =V GS Tj=2 5°C; VDS =5V Fig 9. Gate-source threshold voltage as a function of junction temperature. Fig 10. Sub-threshold drain current as a function of gate-source voltage. Tj=2 5°C and 150°C; VGS =0V V GS = 0 V; f = 1 MHz. Fig 11. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values. Fig 12. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values. 03aa32 -60 0 60 120 180 Tj (°C) VGS(th) (V) max min typ 03aa35 10-6 10-5 10-4 10-3 10-2 10-1
0246 VGS (V)
(A) maxtypmin 003aaa247 0 0.2 0.4 0.6 0.8 1 (A) IS VSD (V) 150 °C Tj = 25 °C 003aaa248 102 103 104 10-1 1 10 10 2 C (pF) C iss C oss C rss VDS (V)
Philips Semiconductors PHK5NQ15T TrenchMOS™ standard level FET Product data Rev. 01 — 20 January 2003 8 of 12 9397 750 10774 © Koninklijke Philips Electronics N.V. 2003. All rights reserved. ID = 5 A; VDD =7 5V Fig 13. Gate-source voltage as a function of gate charge; typical values. 003aaa249 01 0 2 0 3 0 Q G (nC) VGS (V)
Philips Semiconductors PHK5NQ15T TrenchMOS™ standard level FET Product data Rev. 01 — 20 January 2003 9 of 12 9397 750 10774 © Koninklijke Philips Electronics N.V. 2003. All rights reserved. 6. Package outline Fig 14. SOT96-1 (SO8). UNIT A max. A 1 A 2 A 3 bp cD (1) E (2) (1)eH E LL p QZ ywv q REFERENCESOUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE IEC JEDEC EIAJ mm inches 1.75 0.25 0.10 1.45 1.25 0.25 0.49 0.36 0.25 0.19 5.0 4.8 4.0 3.8 1.27 6.2 5.8 1.05 0.7 0.6 0.7 0.3 8 o o 0.25 0.10.25 DIMENSIONS (inch dimensions are derived from the original mm dimensions) Notes 1. Plastic or metal protrusions of 0.15 mm maximum per side are not included. 2. Plastic or metal protrusions of 0.25 mm maximum per side are not included. 1.0 0.4 SOT96-1 X w M q AA 1 A 2 bp D H E Lp Q detail X E Z e c L v M A (A )3 A pin 1 index y 076E03 MS-012 0.069 0.010 0.004 0.057 0.049 0.01 0.019 0.014 0.0100 0.0075 0.20 0.19 0.16 0.15 0.050 0.244 0.228 0.028 0.024 0.028 0.016 0 2.5 5 mm scale SO8: plastic small outline package; 8 leads; body width 3.9 mm SOT96-1 97-05-22 99-12-27
Philips Semiconductors PHK5NQ15T TrenchMOS™ standard level FET Product data Rev. 01 — 20 January 2003 10 of 12 9397 750 10774 © Koninklijke Philips Electronics N.V. 2003. All rights reserved. 7. Revision history Table 5: Revision history Rev Date CPCN Description 01 20030120 - Product data (9397 750 10774)
Philips Semiconductors PHK5NQ15T TrenchMOS™ standard level FET © Koninklijke Philips Electronics N.V. 2003. All rights reserved. Product data Rev. 01 — 20 January 2003 11 of 12 9397 750 10774 Philips Semiconductors PHK5NQ15T TrenchMOS™ standard level FET © Koninklijke Philips Electronics N.V. 2003. All rights reserved. Product data Rev. 01 — 20 January 2003 11 of 12 Contact information For additional information, please visithttp://www.semiconductors.philips.com. 8. Data sheet status [1] Please consult the most recently issued data sheet before initiating or completing a design. [2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. [3] For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. 9. Definitions Short-form specification —The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 10. Disclaimers Life support —These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes —Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. 11. Trademarks TrenchMOS — is a trademark of Koninklijke Philips Electronics N.V. Level Data sheet status[1] Product status[2][3] Definition I Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. III Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN).
© Koninklijke Philips Electronics N.V. 2003. Printed in The Netherlands All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 20 January 2003 Document order number: 9397 750 10774
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Philips Semiconductors PHK5NQ15T TrenchMOS™ standard level FET