PHD44N06LT ISC | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
iscwebsite：www.iscsemi.cn isc & iscsemi isregisteredtrademark1 IscN-ChannelMOSFETTransistor PHD44N06LT
- FEATURES
- WithTo-252(DPAK)package
- Lowinputcapacitanceandgate charge
- Lowgateinputresistance
- 100% avalanchetested
- MinimumLot-to-Lotvariations forrobustdevice performanceandreliable operation
- APPLICATIONS
- Switching applications
- ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-SourceVoltage 55 V VGSS Gate-SourceVoltage ±13 V ID DrainCurrent-Continuous@Tc=25℃ Tc=100℃ 31 A IDM DrainCurrent-SinglePulsed 176 A PD TotalDissipation@TC=25℃ 114 W Tch Max.OperatingJunctionTemperature 175 ℃ Tstg StorageTemperature -55~175 ℃
- THERMALCHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth(ch-c) Channel-to-casethermalresistance 55 ℃/W Rth(ch-a) Channel-to-ambientthermalresistance 1.31 ℃/W
iscwebsite：www.iscsemi.cn isc & iscsemi isregisteredtrademark2 IscN-ChannelMOSFETTransistor PHD44N06LT ELECTRICALCHARACTERISTICS TC=25℃ unlessotherwisespecified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT BVDSS Drain-SourceBreakdownVoltage VGS=0V;ID=0.25mA 55 V VGS(th) GateThresholdVoltage VDS=5V;ID=1.0mA 1.0 2.0 V RDS(on) Drain-SourceOn-Resistance VGS=10V;ID=20A 20 26 mΩ IGSS Gate-SourceLeakageCurrent VGS=±5V;VDS=0V 1 μA IDSS Drain-SourceLeakage Current VDS=55V;VGS=0V 10 μA VSDF Diodeforwardvoltage ISD=25A,VGS =0V 1.2 V