PHB47NQ10T

PHP47NQ10T PHILIPS | Alldatasheet

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PHP47NQ10T; PHB47NQ10T N-channel enhancement mode field-effect transistor Rev. 01 — 16 May 2001 Product data c c 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ 1 technology. Product availability: PHP47NQ10T in SOT78 (TO-220AB) PHB47NQ10T in SOT404 (D 2-PAK). 2. Features ■ Fast switching ■ Very low on-state resistance. 3. Applications ■ DC to DC converters ■ Switched mode power supplies. 4. Pinning information [1] It is not possible to make connection to pin 2 of the SOT404 package. 1. TrenchMOS is a trademark of Royal Philips Electronics. Table 1: Pinning - SOT78 and SOT404, simplified outline and symbol Pin Description Simplified outline Symbol 1 gate (g) SOT78 (TO-220AB) SOT404 (D2-PAK) 2 drain (d) [1] 3 source (s) mb mounting base; connected to drain (d) MBK106 mb MBK116 mb s d g MBB076

Philips Semiconductors PHP47NQ10T; PHB47NQ10T N-channel enhancement mode field-effect transistor Product data Rev. 01 — 16 May 2001 3 of 14 9397 750 08243 © Philips Electronics N.V. 2001. All rights reserved. VGS ≥ 10 V Fig 1. Normalized total power dissipation as a function of mounting base temperature. Fig 2. Normalized continuous drain current as a function of mounting base temperature. Tmb =2 5°C; IDM is single pulse. Unclamped inductive load; V DD ≤ 25 V; RGS =5 0Ω ; VGS = 5 V; starting Tj=2 5°C and 150°C. Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage. Fig 4. Non-repetitive avalanche ruggedness current as a function of pulse duration. 03aa16 100 120 0 50 100 150 200 T mb ( o Pder (%) 03aa24 100 120 0 50 100 150 200 T mb ( o Ider (%) P der P tot P tot 25 C°() Ider ID I D2 5C°() R DSon = VDS / ID 102 103 ID (A) 11 0 102 103VDS (V) tp = 1 µs 10 µs 100 µs 1 ms 10 ms 100ms D.C. 003aaa097 tp (ms) 10110-110-210-3 102 IAS (A) 25 oC Tj prior to avalanche = 150 oC 003aaa098

Philips Semiconductors PHP47NQ10T; PHB47NQ10T N-channel enhancement mode field-effect transistor Product data Rev. 01 — 16 May 2001 4 of 14 9397 750 08243 © Philips Electronics N.V. 2001. All rights reserved. 7. Thermal characteristics

7.1 Transient thermal impedance

Table 4: Thermal characteristics Symbol Parameter Conditions Value Unit R th(j-mb) thermal resistance from junction to mounting base Figure 5 0.9 K/W R th(j-a) thermal resistance from junction to ambient SOT78 package; vertical in still air. 60 K/W R th(j-a) thermal resistance from junction to ambient SOT404 package; mounted on printed circuit board; minimum footprint.

50 K/W

Fig 5. Transient thermal impedance from junction to mounting base as a function of pulse duration. 10110-110-210-310-410-510-610-7 Zth (j-mb) (K/W) 10-1 10-2 10-3 δ = 0.2 0.1 0.05 0.02 0.5 Single pulse T P tp t T tp δ = tp (s) 003aaa099

Philips Semiconductors PHP47NQ10T; PHB47NQ10T N-channel enhancement mode field-effect transistor Product data Rev. 01 — 16 May 2001 6 of 14 9397 750 08243 © Philips Electronics N.V. 2001. All rights reserved. Tj=2 5°CT j=2 5°C and 175°C; VDS > ID × R DSon Fig 6. Output characteristics: drain current as a function of drain-source voltage; typical values. Fig 7. Transfer characteristics: drain current as a function of gate-source voltage; typical values. Tj=2 5°C Fig 8. Drain-source on-state resistance as a function of drain current; typical values. Fig 9. Normalized drain-source on-state resistance factor as a function of junction temperature. 180 160 140 120 100 024 68 1 0 VGS = 10 V 20 V 4.5 V 5.0 V 5.5 V 6.0 V 6.5 V 7.0 V 7.5 V 8.0 V 003aaa100 ID (A) VDS (V) o Tj = 175 oC 25 oC 100 0246 8 ID (A) VGS (V) 003aaa101 VGS = 5.5 V 6.0 V 6.5 V 7.0 V 7.5 V 10 V 8.0 V 5 25 45 65 85 105 125 ID (A) (mΩ ) R DSon 003aaa102 -20 20 60 100-60 140 180 Tj (oC) 1.0 2.0 a 1.2 1.4 1.6 1.8 0.8 0.6 0.4 0.2 003aaa103 a R DSon R DSon 25 C°()

Philips Semiconductors PHP47NQ10T; PHB47NQ10T N-channel enhancement mode field-effect transistor Product data Rev. 01 — 16 May 2001 7 of 14 9397 750 08243 © Philips Electronics N.V. 2001. All rights reserved. ID = 1 mA; VDS =V GS Tj=2 5°C Fig 10. Gate-source threshold voltage as a function of junction temperature. Fig 11. Sub-threshold drain current as a function of gate-source voltage. Tj=2 5°C; VDS = 25 V V GS = 0 V; f = 1 MHz Fig 12. Forward transconductance as a function of drain current; typical values. Fig 13. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values. 2.5 -60 -20 20 0.5 1.5 60 100 140 180 3.5 VGS(th) (V) Tj (oC) 4.5 max typ min 003aaa023 2% typ 98% 10-1 10-2 10-3 10-4 10-5 10-6 01 2 345 ID (A) VGS (V) 003aaa078 0 20 40 60 80 100 gfs (S) ID (A) 003aaa104 C iss C oss C rss C iss, C oss, C rss (nF) 11 0 1 0 210-2 10-1 VDS (V) 003aaa105

Philips Semiconductors PHP47NQ10T; PHB47NQ10T N-channel enhancement mode field-effect transistor Product data Rev. 01 — 16 May 2001 8 of 14 9397 750 08243 © Philips Electronics N.V. 2001. All rights reserved. Tj=2 5°C and 175°C; VGS =0V I D = 40 A; VDD = 20 V and 80 V Fig 14. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values. Fig 15. Gate-source voltage as a function of gate charge; typical values. 100 IS (A) VSD (V) 25 oC Tj = 175 oC 003aaa106 0 1 02 03 04 05 06 07 0 (nC)(V) VGS Q G VDD = 20 V VDD = 80 V 003aaa107

Philips Semiconductors PHP47NQ10T; PHB47NQ10T N-channel enhancement mode field-effect transistor Product data Rev. 01 — 16 May 2001 9 of 14 9397 750 08243 © Philips Electronics N.V. 2001. All rights reserved. 9. Package outline Fig 16. SOT78 (TO-220AB) REFERENCESOUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE IEC JEDEC EIAJ SOT78 SC-46 3-lead TO-220AB D D 1 q p L 123 L1(1) e e b 0 5 10 mm scale Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB SOT78 DIMENSIONS (mm are the original dimensions) AE c Note 1. Terminals in this zone are not tinned. Q UNIT A 1 b1 D 1 e p mm 2.54 qQA b Dc L2 max. 3.0 3.8 3.6 15.0 13.5 3.30 2.79 3.0 2.7 2.6 2.2 0.7 0.4 15.8 15.2 0.9 0.7 1.3 1.0 4.5 4.1 1.39 1.27 6.4 5.9 10.3 9.7 L1(1)E L 00-09-07 01-02-16 mounting base

Philips Semiconductors PHP47NQ10T; PHB47NQ10T N-channel enhancement mode field-effect transistor Product data Rev. 01 — 16 May 2001 10 of 14 9397 750 08243 © Philips Electronics N.V. 2001. All rights reserved. Fig 17. SOT404 (D2-PAK). UNIT A REFERENCESOUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE IEC JEDEC EIAJ mm A 1 D 1 D max. E eL p H D Qc 2.54 2.60 2.20 15.80 14.80 2.90 2.1011 1.60 1.20 10.30 9.70 4.50 4.10 1.40 1.27 0.85 0.60 0.64 0.46 b DIMENSIONS (mm are the original dimensions) SOT404 0 2.5 5 mm scale Plastic single-ended surface mounted package (Philips version of D2-PAK); 3 leads (one lead cropped) SOT404 e e E b D 1 H D D Q Lp c A mounting base 99-06-25 01-02-12

Philips Semiconductors PHP47NQ10T; PHB47NQ10T N-channel enhancement mode field-effect transistor Product data Rev. 01 — 16 May 2001 11 of 14 9397 750 08243 © Philips Electronics N.V. 2001. All rights reserved. 10. Revision history Table 6: Revision history Rev Date CPCN Description 01 20010516 - Product data. Initial version.

Philips Semiconductors PHP47NQ10T; PHB47NQ10T N-channel enhancement mode field-effect transistor Product data Rev. 01 — 16 May 2001 12 of 14 9397 750 08243 © Philips Electronics N.V. 2001 All rights reserved. 11. Data sheet status [1] Please consult the most recently issued data sheet before initiating or completing a design. [2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. 12. Definitions Short-form specification —The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition —Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information —Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 13. Disclaimers Life support —These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes —Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Data sheet status[1] Product status[2] Definition Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-650A.

Philips Semiconductors PHP47NQ10T; PHB47NQ10T N-channel enhancement mode field-effect transistor Product data Rev. 01 — 16 May 2001 13 of 14 9397 750 08243 © Philips Electronics N.V. 2001. All rights reserved. Philips Semiconductors - a worldwide company Argentina: see South America Australia: Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Tel. +43 160 101, Fax. +43 160 101 1210 Belarus: Tel. +375 17 220 0733, Fax. +375 17 220 0773 Belgium: see The Netherlands Brazil:see South America Bulgaria: Tel. +359 268 9211, Fax. +359 268 9102 Canada: Tel. +1 800 234 7381 China/Hong Kong: Tel. +852 2 319 7888, Fax. +852 2 319 7700 Colombia: see South America Czech Republic: see Austria Denmark: Tel. +45 3 288 2636, Fax. +45 3 157 0044 Finland: Tel. +358 961 5800, Fax. +358 96 158 0920 France: Tel. +33 1 4728 6600, Fax. +33 1 4728 6638 Germany: Tel. +49 40 23 5360, Fax. +49 402 353 6300 Hungary: Tel. +36 1 382 1700, Fax. +36 1 382 1800 India: Tel. +91 22 493 8541, Fax. +91 22 493 8722 Indonesia: see Singapore Ireland: Tel. +353 17 64 0000, Fax. +353 17 64 0200 Israel: Tel. +972 36 45 0444, Fax. +972 36 49 1007 Italy: Tel. +39 039 203 6838, Fax +39 039 203 6800 Japan: Tel. +81 33 740 5130, Fax. +81 3 3740 5057 Korea: Tel. +82 27 09 1412, Fax. +82 27 09 1415 Malaysia: Tel. +60 37 50 5214, Fax. +60 37 57 4880 Mexico: Tel. +9-5 800 234 7381 Middle East: see Italy Netherlands: Tel. +31 40 278 2785, Fax. +31 40 278 8399 New Zealand: Tel. +64 98 49 4160, Fax. +64 98 49 7811 Norway: Tel. +47 22 74 8000, Fax. +47 22 74 8341 Philippines: Tel. +63 28 16 6380, Fax. +63 28 17 3474 Poland: Tel. +48 22 5710 000, Fax. +48 22 5710 001 Portugal: see Spain Romania: see Italy Russia: Tel. +7 095 755 6918, Fax. +7 095 755 6919 Singapore: Tel. +65 350 2538, Fax. +65 251 6500 Slovakia: see Austria Slovenia: see Italy South Africa: Tel. +27 11 471 5401, Fax. +27 11 471 5398 South America: Tel. +55 11 821 2333, Fax. +55 11 829 1849 Spain: Tel. +34 33 01 6312, Fax. +34 33 01 4107 Sweden: Tel. +46 86 32 2000, Fax. +46 86 32 2745 Switzerland: Tel. +41 14 88 2686, Fax. +41 14 81 7730 Taiwan: Tel. +886 22 134 2451, Fax. +886 22 134 2874 Thailand: Tel. +66 23 61 7910, Fax. +66 23 98 3447 Turkey: Tel. +90 216 522 1500, Fax. +90 216 522 1813 Ukraine: Tel. +380 44 264 2776, Fax. +380 44 268 0461 United Kingdom: Tel. +44 208 730 5000, Fax. +44 208 754 8421 United States: Tel. +1 800 234 7381 Uruguay: see South America Vietnam: see Singapore Yugoslavia: Tel. +381 11 3341 299, Fax. +381 11 3342 553 For all other countries apply to: Philips Semiconductors, Marketing Communications, Building BE, P .O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 272 4825 Internet:http://www.semiconductors.philips.com (SCA72)

© Philips Electronics N.V. 2001. Printed in The Netherlands All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 16 May 2001 Document order number: 9397 750 08243

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Philips Semiconductors PHP47NQ10T; PHB47NQ10T N-channel enhancement mode field-effect transistor