PHB160N03T PHILIPS | Alldatasheet
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N-channel enhancement mode field-effect transistor Rev. 01 — 13 September 2000 Product specification c c M3D166 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ 1 technology. Product availability: PHB160N03T in SOT404 (D2-PAK). 2. Features ■ TrenchMOS™ technology ■ Very low on-state resistance. 3. Applications ■ DC to DC converters ■ Switched-mode power supplies ■ General purpose switch. 4. Pinning information [1] It is not possible to make connection to pin 2 of the SOT404 package. 1. TrenchMOS is a trademark of Royal Philips Electronics. Table 1: Pinning - SOT404 (D2-PAK), simplified outline and symbol Pin Description Simplified outline Symbol 1 gate (g) SOT404 (D2-PAK) 2 drain (d) [1] 3 source (s) mb connected to drain (d) MBK116 mb s d g MBB076
Philips Semiconductors PHB160N03T N-channel enhancement mode field-effect transistor Product specification Rev. 01 — 13 September 2000 3 of 13 9397 750 07325 © Philips Electronics N.V. 2000. All rights reserved. VGS ≥ 10 V Fig 1. Normalized total power dissipation as a function of mounting base temperature. Fig 2. Normalized continuous drain current as a function of mounting base temperature. Tmb =2 5°C; IDM is single pulse Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage. 03aa16 100 120 0 25 50 75 100 125 150 175 200 Pder Tmb (oC) (%) 120 100 Ider (%) 0 25 50 75 100 125 150 175 200 Tmb (oC) 03ad31 P der P tot P tot 25 C°() Ider ID I D2 5C°() ID (A) tp = 10 µs 100 µs 1 ms 10 ms 100ms DC R DSon = VDS / ID tp tp T P t Tδ = 03ad34 VDS (V)11 0 103 102 102
Philips Semiconductors PHB160N03T N-channel enhancement mode field-effect transistor Product specification Rev. 01 — 13 September 2000 4 of 13 9397 750 07325 © Philips Electronics N.V. 2000. All rights reserved. 7. Thermal characteristics
7.1 Transient thermal impedance
Table 4: Thermal characteristics Symbol Parameter Conditions Value Unit R th(j-mb) thermal resistance from junction to mounting base Figure 4 0.65 K/W R th(j-a) thermal resistance from junction to ambient Mounted on a printed circuit board; minimum footprint
50 K/W
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration. Zth(j-mb) (K/W) tp (s) δ = 0.5 0.1 0.05 0.02 0.2 single pulse 10-210-310-410-510-610-7 03ad20 tp tp T P t Tδ = 10-1 10-2 10-3 10-1
Philips Semiconductors PHB160N03T N-channel enhancement mode field-effect transistor Product specification Rev. 01 — 13 September 2000 6 of 13 9397 750 07325 © Philips Electronics N.V. 2000. All rights reserved. Tj=2 5°CT j=2 5°C and 175°C; VDS > ID × R DSon Fig 5. Output characteristics: drain current as a function of drain-source voltage; typical values. Fig 6. Transfer characteristics: drain current as a function of gate-source voltage; typical values. Tj=2 5°C Fig 7. Drain-source on-state resistance as a function of drain current; typical values. Fig 8. Normalized drain source on-state resistance factor as a function of junction temperature. 6.0 024 68 1 0 100 200 300 400 ID (A) 8.5 VGS (V) = 8.0 7.5 7.0 6.5 5.04.5 VDS (V) 03ad22 100 ID (A) 01 2 34 5 6 7 VGS (V) Tj = 175 oC 25 oC 03ad23 VDS > ID X RDSon 0 2 04 06 0 8 0 1 0 0 R DSon ID (A) 6 V 7 V 6.5 V 8 V 10 V (mΩ ) 5.5 V VGS = 03ad21 03aa27 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -60 -20 20 60 100 140 180 Tj (oC) a a R DSon R DSon 25 °C()
Philips Semiconductors PHB160N03T N-channel enhancement mode field-effect transistor Product specification Rev. 01 — 13 September 2000 7 of 13 9397 750 07325 © Philips Electronics N.V. 2000. All rights reserved. ID = 1 mA; VDS =V GS Tj=2 5°C; VDS =5V Fig 9. Gate-source threshold voltage as a function of junction temperature. Fig 10. Sub-threshold drain current as a function of gate-source voltage. Tj=2 5°C; VDS > ID × R DSon VGS = 0 V; f = 1 MHz Fig 11. Forward transconductance as a function of drain current; typical values. Fig 12. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values. 03aa32 0.5 1.5 2.5 3.5 4.5 -60 -20 20 60 100 140 180 VGS(th) Tj (oC) (V) max. typ. min 03aa35 10-6 10-5 10-4 10-3 10-2 10-1 012345 maxtypmin VGS (V) ID (A) 0 20 40 60 80 100 gfs ID (A) (S) 03ad24 1 10 VDS (V) Ciss Coss Crss C iss, Coss C rss (nF) 03ad25 10-110-2 102
Philips Semiconductors PHB160N03T N-channel enhancement mode field-effect transistor Product specification Rev. 01 — 13 September 2000 8 of 13 9397 750 07325 © Philips Electronics N.V. 2000. All rights reserved. Tj=2 5°C and 175°C; VGS =0V I D = 75 A; VDS =1 5V Fig 13. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values. Fig 14. Gate-source voltage as a function of gate charge; typical values. 100 ID (A) VSD (V) 03ad30 Tj = 175 oC 25 oC 03ad29 0 20 40 60 80 100 120 Q G (nC) VGS (V) VDS = 15V ID = 75 A
Philips Semiconductors PHB160N03T N-channel enhancement mode field-effect transistor Product specification Rev. 01 — 13 September 2000 9 of 13 9397 750 07325 © Philips Electronics N.V. 2000. All rights reserved. 9. Package outline Fig 15. SOT404 (D2-PAK). UNIT A REFERENCESOUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE IEC JEDEC EIAJ mm A 1 D 1 D max. E eL p H D Qc 2.54 2.60 2.20 15.40 14.80 2.90 2.1011 1.60 1.20 10.30 9.70 4.50 4.10 1.40 1.27 0.85 0.60 0.64 0.46 b DIMENSIONS (mm are the original dimensions) SOT404 0 2.5 5 mm scale Plastic single-ended surface mounted package (Philips version of D2-PAK); 3 leads (one lead cropped) SOT404 e e E b D 1 H D D Q Lp c A mounting base 98-12-14 99-06-25
Philips Semiconductors PHB160N03T N-channel enhancement mode field-effect transistor Product specification Rev. 01 — 13 September 2000 10 of 13 9397 750 07325 © Philips Electronics N.V. 2000. All rights reserved. 10. Revision history Table 6: Revision history Rev Date CPCN Description 01 20000913 - Product specification
Philips Semiconductors PHB160N03T N-channel enhancement mode field-effect transistor Product specification Rev. 01 — 13 September 2000 11 of 13 9397 750 07325 © Philips Electronics N.V. 2000 All rights reserved. 11. Data sheet status [1] Please consult the most recently issued data sheet before initiating or completing a design. 12. Definitions Short-form specification —The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition —Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information —Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 13. Disclaimers Life support —These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes —Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Datasheet status Product status Definition[1] Objective specification Development This data sheet contains the design target or goal specifications for product development. Specification may change in any manner without notice. Preliminary specification Qualification This data sheet contains preliminary data, and supplementary data will be published at a later date. Philips Semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product. Product specification Production This data sheet contains final specifications. Philips Semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product.
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© Philips Electronics N.V. 2000. Printed in The Netherlands All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 13 September 2000 Document order number: 9397 750 07325
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Philips Semiconductors PHB160N03T N-channel enhancement mode field-effect transistor