PHB130N03LT ISC | Alldatasheet
Document overview
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Technical content
iscN-ChannelMOSFETTransistor PHB130N03LT www.iscsemi.com 1
FEATURES
- Drain Current-ID=75A@TC=25℃
- Drain SourceVoltage-VDSS=30V(Min)
- Static Drain-SourceOn-Resistance -RDS(on) =6mΩ(Max)@VGS=5V
DESCRIPTION
- DC-to-DCConverter
- GeneralIndustrialApplications
- PowerMotorControl ABSOLUTE MAXIMUM RATINGS(Ta=25℃) THERMALCHARACTERISTICS SYMBOL PARAMETER VALUE UNIT VDSS Drain-SourceVoltage 30 V VGS Gate-SourceVoltage-Continuous ±10 V ID DrainCurrent-Continuous 75 A IDM DrainCurrent-SinglePulse 240 A PD TotalDissipation@TC=25℃ 187 W TJ Max.OperatingJunctionTemperature 175 ℃ Tstg StorageTemperature -55~175 ℃ SYMBOL PARAMETER MAX UNIT Rthj-c ThermalResistance,JunctiontoCase 0.8 ℃/W
iscN-ChannelMOSFETTransistor PHB130N03LT www.iscsemi.com 2 ELECTRICALCHARACTERISTICS（TC=25℃ unless otherwisespecified） SYMBOL PARAMETER CONDITIONS MIN MAX UNIT V(BR)DSS Drain-SourceBreakdownVoltage VGS=0;ID=0.25mA 30 -- V IDSS ZeroGateVoltageDrainCurrent VDS=30V;VGS=0 -- 10 uA IGSS Gate-BodyLeakageCurrent VGS= ±5V;VDS=0 -- ±1 uA VGS(th) GateThresholdVoltage VDS=VGS;ID=1mA 1.0 2.0 V RDS(on) Drain-SourceOn-Resistance VGS=5V;ID=25A -- 6 mΩ VSD ForwardOn-Voltage IS=25A;VGS=0 -- 1.2 V PRODUCTDISCLAIMER ISCreserves the rights tomakechangesof thecontent hereinthe datasheetatany timewithout notification.The informationcontained hereinis presentedonly as aguidefortheapplications ofour products. ISCproducts are intendedforusagein generalelectronic equipment.Theproducts are notdesigned for usein equipmentwhichrequire specialized qualityand/or reliability,orin equipment whichcould have applications inhazardous environments,aerospaceindustry,or medicalfield.Pleasecontactusif you intend ourproducts tobe used inthese specialapplications. ISC makes no warranty or guarantee regarding the suitability of its products for any particular purpose, nor does ISC assume any liability arising from the application or use of any products, and specifically disclaimsany and allliability,includingwithout limitation special,consequential orincidental damages. Itis strictlyprohibitedto reprintorcopy partorallof thisdatasheetwithoutpermission fromISC.