PHA3135-130M MACOM | Alldatasheet
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NPN Silicon Power Transistor Input and Output Matched to 50W Duroid Circuit Board Easily Combined for High Power Transmitters Plated Copper Flange l l l l l Parameter Absolute Maximum Suppy Voltage 40V Input Power 26.5V Output Power @ 3.3 GHz 200A Thermal Resistance / Per 0.24A Transistor Power Dissipation 400W Operating Case Temp. -30 to 1200°C Storage Temperature -40 to +125°C Absolute Maximum Ratings at 25°C1 1. Operation of this device outside of these limits may cause permanent damage. Parameter Symbol Test Conditions Units Min. Max. Output Power P OUT VCC =36 V, PIN=21 W, F=3.1 GHz W 145 - Output Power POUT VCC =36 V, PIN=21 W, F=3.3 GHz W 130 - Output Power POUT VCC =36 V, PIN=21 W, F=3.5 GHz W 115 - Power Gain G P VCC =36 V, PIN=21 W, F=3.1 GHz dB 8.4 - Power Gain G P VCC =36 V, PIN=21 W, F=3.3 GHz dB 7.9 - Power Gain G P VCC =36 V, PIN=21 W, F=3.5 GHz dB 7.4 - Collector Efficiency hC VCC =36 V, PIN=21 W, F=3.1, 3.3, 3.5 GHz %3 5- Input Return Loss RL VCC =36 V, PIN=21 W, F=3.1, 3.3, 3.5 GHz dB 6 - Load VSWR Tolerance VSWR-T VCC =36 V, PIN=21 W, F=3.1, 3.3, 3.5 GHz - - 3:1 Load VSWR Stability VSWR-S VCC =36 V, PIN=21 W, F=3.1, 3.3, 3.5 GHz - - 2:1 Electrical Characteristics at 25°C PHA3135-130M Unless Otherwise Noted, Tolerances Are: Inches ±.005˝ (Millimeters ±13mm)