PHA3135-130M MA-COM | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 3
Technical content
Features
- NPN silicon bipolar transistor
- Input and output matched to 50Ω
- Duroid circuit board
- Easily combined for high power transmitters
- Plated copper flange Outline Drawing Electrical Specifications: TC = 25 ± 5°C (Room Ambient ) Parameter Test Conditions Frequency Symbol Min Max Units Thermal Resistance Vcc = 36V, Pin = 21W F = 3.1, 3.3, 3.5 GHz RTH(JC) - 0.24 °C/W Output Power Vcc = 36V, Pin = 21W F = 3.1 GHz POUT, 3.1GHz 145 - W Output Power Vcc = 36V, Pin = 21W F = 3.3 GHz POUT, 3.3GHz 130 - W Output Power Vcc = 36V, Pin = 21W F = 3.5 GHz POUT, 3.5GHz 115 - W Power Gain Vcc = 36V, Pin = 21W F = 3.1 GHz GP, 3.3GHz 8.4 - dB Power Gain Vcc = 36V, Pin = 21W F = 3.3 GHz GP, 3.5GHz 7.9 - dB Power Gain Vcc = 36V, Pin = 21W F = 3.5 GHz GP 7.4 - dB Collector Efficiency Vcc = 36V, Pin = 21W F = 3.1, 3.3, 3.5 GHz ηC 35 - % Input Return Loss Vcc = 36V, Pin = 21W F = 3.1, 3.3, 3.5 GHz RL - -6 dB Pulse Droop Vcc = 36V, Pin = 21W F = 3.1, 3.3, 3.5 GHz Droop - 0.5 dB Load Mismatch Tolerance Vcc = 36V, Pin = 21W F = 3.1, 3.3, 3.5 GHz VSWR-T - 3:1 - Load Mismatch Stability Vcc = 36V, Pin = 21W F = 3.1, 3.3, 3.5 GHz VSWR-S - 2:1 - Absolute Maximum Ratings at 25°C Parameter Symbol Rating Units Collector Current (Peak) IC 23 A Power Dissipation @ +25°C PTOT 730 W Operating Temperature TOP -30 to +100 °C Storage Temperature TSTG -40 to +125 °C Junction Temperature TJ 200 °C
115, 130, 145W, 3.1-3.5 GHz, 100μs Pulse, 10% Duty M/A-COM Products Released, 04 Feb 08 PHA3135-130M
- North America Tel: 800.366.2266 / Fax: 978.366.2266 Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. Gain vs. Frequency Typical RF Performance Freq. (GHz) Pin (W) Pout (W) Gain (dB) ΔGain (dB) Ic (A) Eff (%) RL (dB) VSWR-S (2:1) VSWR-T (3:1) Collector Efficiency vs. Frequency 7.0 7.5 8.0 8.5 9.0 Fre q (GHz) Gain (dB) Fre q (GHz) Efficiency (%)
115, 130, 145W, 3.1-3.5 GHz, 100μs Pulse, 10% Duty M/A-COM Products Released, 04 Feb 08 PHA3135-130M
- North America Tel: 800.366.2266 / Fax: 978.366.2266 Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. Power Module Dimensions