PHA2731-190M MACOM | Alldatasheet

Document overview

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Technical content

Features

  • Input and Output matched to 50Ω
  • RC bias circuit included
  • Dual NPN Silicon class C power transistors
  • Soft substrate εr = 10.5
  • Hermetic Package
  • Nickel plated copper flange Outline Drawing1 Notes: (unless otherwise specified) 1. Tolerances are: inches ± .005” (millimeters ± 0.13mm) Electrical Specifications at 25°C==== Absolute Maximum Rating at 25°C Parameter Symbol Rating Units Collector-Emitter Voltage VCES 65 V Emitter-Base Voltage VEBO 3.0 V Junction Temperature Tj 200 °C Thermal Resistance θJC 0.35 °C/W Operating Flange Temp. TC -10 to +100 °C Storage Temperature TSTG -20 to +125 °C Symbol Parameter Test Conditions Units Min Typ Max Pout Output Power VCC = 38V, PIN = 34W, f = 2.7, 2.9, 3.1 GHz W 190 205 Gp Power Gain VCC = 38V, POUT = 190W, f = 2.7, 2.9, 3.1 GHz dB 7.5 8 ηC Collector Efficiency VCC = 38V, POUT = 190W, f = 2.7, 2.9, 3.1 GHz % 33 35 RL Input Return Loss VCC = 38V, POUT = 190W, f = 2.7, 2.9, 3.1 GHz dB 10 Droop Pulse Amplitude Droop VCC = 38V, POUT = 190W, f = 2.7, 2.9, 3.1 GHz dB 1 2fc 2nd Harmonic VCC = 38V, POUT = 190W, f = 2.7, 2.9, 3.1 GHz dBc -17 -20 Spurious Spurious Level VCC = 38V, POUT = 190W, f = 2.7, 2.9, 3.1 GHz dBc -50 ∆ϕ Insertion Phase Deviation VCC = 38V, POUT = 190W, f = 2.7, 2.9, 3.1 GHz Deg. -20 +20 VSWR-T Tolerance and Stability VCC = 38V, POUT = 190W, f = 2.7, 2.9, 3.1 GHz VSWR 1.5:1 OD-STAB Stability at Overdrive PIN = (PIN @ POUT = 190W) + 1 dB1

Description

M/A-COM’s PHA2731-190M is a Class C microwave power amplifier module specifically designed for S-Band radar pulsed power applications where high efficiency and saturated power are required. The module incorporates two in-phase combined common base hybrid power transistors and is input and output matched to 50 Ω for unparalleled ease of PA design. The thick copper base and ceramic transistor packaging technology pro- vides for excellent thermal management, which when combined with M/A-COM’s mature transistor fabrication technology re- sults in the highest reliability available. 1. No oscillations and no spurs at 1 dB overdrive. Radar Pulsed Power Amplifier—190 Watts 2.7—3.1 GHz, 200µs Pulse, 10% Duty PHA2731-190M /onesansinv North America: Tel. (800) 366-2266, Fax (800) 618-8883 /onesansinv Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 /onesansinv Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 Specifications subject to change without notice. Visit www.macom.com for additional data sheets and product information. V 2.0

PIN (Watts) POUT (Watts) Collector Efficiency (%) Pout 2.7GHz Pout 2.9GHz Pout 3.1GHz Eff. 2.7GHz Eff. 2.9GHz Eff. 3.1GHz 7.5 8.5 9.5 2.7 2.8 2.9 3 3.1 FREQUENCY (GHz) GAIN (dB) Collector Efficiency (%) Gain Eff. Amplifier in RF Test Fixture Typical Performance Curves Performance at 190W POUT, VCC=38V, 200 µs, 10% Performance vs. PIN, 38 VCC=38V, 200 µs, 10% /onesansinv North America: Tel. (800) 366-2266, Fax (800) 618-8883 /onesansinv Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 /onesansinv Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 Specifications subject to change without notice. Visit www.macom.com for additional data sheets and product information. V 2.0 Radar Pulsed Power Amplifier—190 Watts, 2.7-3.1 GHz, 200µs Pulse, 10% Duty PHA2731-190M VCC RF OUT RF IN VCC