PHA-83W MINI | Alldatasheet

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Technical content

A. Performance and quality attributes and conditions not expressly stated in this specification document are intended to be excluded and do not form a part of this specification document. B. Electrical specifications and performance data contained in this specification document are based on Mini-Circuit’s applicable established test performance criteria and measurement instructions. C. The parts covered by this specification document are subject to Mini-Circuits standard limited warranty and terms and conditions (collectively, “Standard Terms”); Purchasers of this part are entitled to the rights and benefits contained therein. For a full statement of the Standard Terms and the exclusive rights and remedies thereunder, please visit Mini-Circuits’ website at www.minicircuits.com/MCLStore/terms.jsp Mini-Circuits The Big Deal

  • Ultra Wideband,0.05 - 8GHz
  • Excellent Gain Flatness 15.7±1.4dB Typ.
  • High Linearity, +23.3dBm P1dB & +35.5dBm OIP3
  • Robust ESD performance (Class 1B) Product Overview PHA-83W+ (RoHS compliant) is an advanced wideband amplifier fabricated using PHEMT technology and offers extremely high dynamic range over a broad frequency range and with excellent gain flatness. In addition, the PHA-83W+ has good input and output return loss over a broad frequency range. PHA- 83W+ is enclosed in a SOT-89 package and has very good thermal performance. Feature Advantages Ultra Wideband: 50MHz to 8GHz Broadband covering primary wireless communications bands Extremely High IP3 36.6 dBm typ. at 50 MHz 37 dBm typ. at 6 GHz The PHA-83W+ matches industry leading IP3 performance relative to device size and power consumption. The combination of the design and PHEMT Structure provides en - hanced linearity over a broad frequency range as evidence in the IP3 being approxi - mately 12 dB above the P1dB point. This feature makes this amplifier ideal for use in:
  • Driver amplifiers for complex waveform up converter paths
  • Drivers in linearized transmit systems
  • Secondary amplifiers in ultra-High Dynamic range receivers Excellent Gain Flatness Typical ±1.4dB gain flatness across the entire frequency range minimizes the need for exter- nal equalizer networks making it a great fit for instrumentation and EW application. PHA-83W+ Key Features 50Ω 50 MHz to 8 GHz SOT -89 PACKAGE

A. Performance and quality attributes and conditions not expressly stated in this specification document are intended to be excluded and do not form a part of this specification document. B. Electrical specifications and performance data contained in this specification document are based on Mini-Circuit’s applicable established test performance criteria and measurement instructions. C. The parts covered by this specification document are subject to Mini-Circuits standard limited warranty and terms and conditions (collectively, “Standard Terms”); Purchasers of this part are entitled to the rights and benefits contained therein. For a full statement of the Standard Terms and the exclusive rights and remedies thereunder, please visit Mini-Circuits’ website at www.minicircuits.com/MCLStore/terms.jsp Mini-Circuits simplified schematic and pin description Function Pin Number Description RF-IN 1 RF input pin. RF-OUT and DC-IN 3 RF Output and DC Bias GND 2,4 Connections to ground.

50 MHz - 8 GHz

CASE STYLE: DF782 PHA-83W+ Product Features

  • Ultra Wideband, 0.05 - 8GHz
  • Excellent Gain Flatness 15.7±1.4dB Typ.
  • High Linearity, +23.3dBm P1dB & +35.5dBm OIP3
  • Robust ESD performance (Class 1B) REV. OR M174838 PHA-83W+ TH/RS/CP 190913 General Description PHA-83W+ (RoHS compliant) is an advanced wideband amplifier fabricated using PHEMT technology and offers extremely high dynamic range over a broad frequency range and with excellent gain flatness. In addition, the PHA-83W+ has good input and output return loss over a broad frequency range. PHA- 83W+ is enclosed in a SOT-89 package and has very good thermal performance. Typical Applications
  • WiFi
  • WLAN
  • LTE
  • WiMAX
  • S-band Radar
  • C-Band Satcom RF-IN RF-OUT and DC-IN GND

3 RF-OUT & DC-IN

2 GROUND

1 RF-IN

+RoHS Compliant The +Suffix identifies RoHS Compliance. See our web site for RoHS Compliance methodologies and qualifications

Monolithic PHEMT MMIC Amplifier Page 3 of 5 Notes A. Performance and quality attributes and conditions not expressly stated in this specification document are intended to be excluded and do not form a part of this specification document. B. Electrical specifications and performance data contained in this specification document are based on Mini-Circuit’s applicable established test performance criteria and measurement instructions. C. The parts covered by this specification document are subject to Mini-Circuits standard limited warranty and terms and conditions (collectively, “Standard Terms”); Purchasers of this part are entitled to the rights and benefits contained therein. For a full statement of the Standard Terms and the exclusive rights and remedies thereunder, please visit Mini-Circuits’ website at www.minicircuits.com/MCLStore/terms.jsp Mini-Circuits Parameter Ratings Operating temperature (ground lead) -40°C to 85°C Storage temperature -65°C to 150°C Power dissipation 1.58W Input power (CW) 18 dBm (continuous) 24 dBm (5 minutes max) DC voltage on Pin 3 10.5V 5. Permanent damage may occur if any of these limits are exceeded. Electrical maximum ratings are not intended for continuous normal operation. Absolute Maximum Ratings5 PHA-83W+ 1. Measured on Mini-Circuits Characterization Test Board TB-PHA-83W+. See Characterization Test Circuit (Figure 1). 2. Measured on Mini-Circuits Application Evaluation Board TB-PHA-83WE+. See Application Test Circuit (Figure 2). 3. Device Current Variation vs. Temperature= (Current at 85°C - Current at -45°C)/130 Electrical Specifications at 25°C, 50Ω, unless noted Parameter Condition (MHz) Vd=9V1 Vd=5V1 Vd=9V2 Vd=5V2 Units Frequency range 50 8000 50-8000 50-8000 50-8000 MHz 8000 — 14.2 — 10 12.4 8.2 Gain flatness 50 - 8000 1.4 2.8 — — dB Input return loss 50 23 20 16 16 dB 2000 21 14 21 17 4000 13 11 14 12 6000 13 14 14 16 8000 4 6 3 5 Output return loss 50 17 26 13 17 dB 2000 30 17 33 22 4000 18 13 17 12 6000 18 12 15 20 8000 5 6 6 6 Output power @1 dB compression 50 23.8 16.5 23.7 15.6 dBm 2000 23.8 16.3 24.3 16 4000 23.3 15.9 22.6 14.1 6000 22.6 16.4 22.6 15.8 8000 18.5 13.2 16.7 11 Output IP3 (Pout= 0dBm/Tone) 50 36.6 24.1 36.5 25.9 dBm 2000 36 23.4 35.4 24.6 4000 35.5 23.4 34.5 22.8 6000 37 23.6 35.6 25.1 8000 31.9 20.9 29.9 19.5 Noise figure 50 3.3 2.8 3.4 2.8 dB 2000 2.9 2.7 2.9 2.7 4000 3.3 3.1 3.5 3.1 6000 3.9 3.6 3.9 3.5 8000 5.1 4.7 5.4 4.9 Device operating voltage 8.5 9 9.5 5 9 5 V Device operating current 110 127 40.8 115 42.7 mA Device current variation vs voltage4 0.018 0.015 0.018 0.015 mA/mV Thermal resistance, junction-to-ground Lead at 85°C stage temperature 41 41 41 41 °C/W

Monolithic PHEMT MMIC Amplifier Page 4 of 5 Notes A. Performance and quality attributes and conditions not expressly stated in this specification document are intended to be excluded and do not form a part of this specification document. B. Electrical specifications and performance data contained in this specification document are based on Mini-Circuit’s applicable established test performance criteria and measurement instructions. C. The parts covered by this specification document are subject to Mini-Circuits standard limited warranty and terms and conditions (collectively, “Standard Terms”); Purchasers of this part are entitled to the rights and benefits contained therein. For a full statement of the Standard Terms and the exclusive rights and remedies thereunder, please visit Mini-Circuits’ website at www.minicircuits.com/MCLStore/terms.jsp Mini-Circuits PHA-83W+ Fig 1. Block Diagram of Test Circuit used for characterization. (DUT soldered on Mini-Circuits Characterization test board TB-PHA-83W+) Gain, Return loss, Output power at 1dB compression (P1 dB) , output IP3 (OIP3) and noise figure measured using Agilent’s N5242A PNA-X microwave network analyzer. Conditions: 1. Gain and Return loss: Pin= -25dBm 2. Output IP3 (OIP3): Two tones, spaced 1 MHz apart, 0 dBm/tone at output. Characterization Test Circuit Application Test Circuit Fig 2. Block Diagram of Test Circuit used for characterization. (DUT soldered on Mini-Circuits Application test board TB-PHA-83WE+) Gain, Return loss, Output power at1dB compression (P1dB), output IP3 (OIP3) and noise figure measured using Agilent’s N5242A PNA-X microwave network analyzer. Conditions: 1. Gain and Return loss: Pin= -25dBm 2. Output IP3 (OIP3): Two Tones spaced 1 MHz apart, 0 dBm/ tone at output. Product Marking Marking may contain other features or characters for internal lot control PH83

Monolithic PHEMT MMIC Amplifier Page 5 of 5 Notes A. Performance and quality attributes and conditions not expressly stated in this specification document are intended to be excluded and do not form a part of this specification document. B. Electrical specifications and performance data contained in this specification document are based on Mini-Circuit’s applicable established test performance criteria and measurement instructions. C. The parts covered by this specification document are subject to Mini-Circuits standard limited warranty and terms and conditions (collectively, “Standard Terms”); Purchasers of this part are entitled to the rights and benefits contained therein. For a full statement of the Standard Terms and the exclusive rights and remedies thereunder, please visit Mini-Circuits’ website at www.minicircuits.com/MCLStore/terms.jsp Mini-Circuits PHA-83W+ MSL Test Flow Chart ESD Rating Human Body Model (HBM): Class 1B (500V) in accordance with ANSI/ESD STM 5.1 - 2001 Performance Data Data Table Swept Graphs S-Parameter (S2P Files) Data Set (.zip file) Case Style DF782 (SOT 89) Plastic package, exposed paddle lead finish: Matte-Tin Tape & Reel F55 Standard quantities available on reel 7” reels with 20, 50, 100, 200, 500 or 1K devices Suggested Layout for PCB Design PL-653 Evaluation Board TB-PHA-83WE+ Environmental Ratings ENV08T1 Additional Detailed Technical Information additional information is available on our dash board. To access this information click here Visual Inspection Electrical Test SAM Analysis Reflow 3 cycles, 260°C Soak 85°C/85RH 168 hours Bake at 125°C, 24 hours Visual Inspection Electrical Test SAM Analysis Start Finish Additional Notes A. Performance and quality attributes and conditions not expressly stated in this specification document are intended to be excluded and do not form a part of this specification document. B. Electrical specifications and performance data contained in this specification document are based on Mini-Circuit’s applicable established test performance criteria and measurement instructions. C. The parts covered by this specification document are subject to Mini-Circuits standard limited warranty and terms and conditions (collectively, “Standard Terms”); Purchasers of this part are entitled to the rights and benefits contained therein. For a full statement of the Standard Terms and the exclusive rights and remedies thereunder, please visit Mini-Circuits’ website at www.minicircuits.com/MCLStore/terms.jsp