PH3135-65M MACOM | Alldatasheet
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Q NPN Silicon Microwave Power Transistor Q Common Base Configuration Q Broadband Class C Operation Q High Efficiency Interdigitated Geometry Q Gold Metalization System Q Internal Input and Output Impedance Matching Q Hermetic Metal/Ceramic Package PH3135-65M Outline Drawing 8/9/02 Electrical Characteristics @ 25 °C Parameter Symbol Min. Max. Units Test Conditions Collector-Emitter Breakdown BVCES 65 - V IC=40 mA Collector-Emitter Leakage ICES - 7.5 mA VCE=40 V Thermal Resistance RTH(JC) - 0.42 °C/W VCC=36 V, Po = 65 W, Freq= 3.1, 3.3 and 3.5 GHz Input Power PIN - 11.6 W VCC=36 V, Po = 65 W, Freq= 3.1, 3.3 and 3.5 GHz Power Gain GP 7.5 - dB VCC=36 V, Po = 65 W, Freq= 3.1, 3.3 and 3.5 GHz Collector Efficiency η 35 - % VCC=36 V, Po = 65 W, Freq= 3.1, 3.3 and 3.5 GHz Input Return Loss RL 6 - dB VCC=36 V, Po = 65 W, Freq= 3.1, 3.3 and 3.5 GHz Load Mismatch Tolerance VSWR-T - 2:1 - VCC=36 V, Po = 65 W, Freq= 3.1, 3.3 and 3.5 GHz Rev. 1 Absolute Maximum Ratings @ 25 °C Parameter Symbol Rating Units Collector-Emitter Voltage VCES 65 V Emitter-Base Voltage VEBO 3.0 V Collector Current (Peak) IC 7.7 A Total Power Dissipation @ +45 °C PTOT 369 W Storage Temperature TSTG -65 to +200 °C Junction Temperature Tj 200 °C
Radar Pulsed Power Transistor, 65 Watts, 3.10-3.50 GHz, 100µs Pulse, 10% Duty PH3135-65M 8/9/02 Rev. 1 Test Fixture Assembly M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. North America: Tel. (800) 366-2266 Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 F (GHz) Z IF (Ω) Z OF (Ω) Broadband Test Fixture Impedances TEST FIXTURE INPUT CIRCUIT ZIF TEST FIXTURE OUTPUT CIRCUIT ZOF50Ω 50Ω