PH3135-30M MA-COM | Alldatasheet
Document overview
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- PDF pages: 3
Technical content
Features
- NPN silicon microwave power transistors
- Common base configuration
- Broadband Class C operation
- High efficiency inter-digitized geometry
- Diffused emitter ballasting resistors
- Gold metallization system
- Internal input and output impedance matching
- Hermetic metal/ceramic package
- RoHS compliant Electrical Specifications: TC = 25 ± 5°C (Room Ambient ) Parameter Test Conditions Frequency Symbol Min Max Units Collector-Emitter Breakdown Voltage I C = 20mA BV CES 65 - V Collector-Emitter Leakage Current V CE = 40V I CES - 3.0 mA Output Power Vcc = 36V, Pin = 6.0W F = 3.1, 3.3, 3.5 GHz POUT 30 - W Collector Efficiency Vcc = 36V, Pin = 6.0W F = 3.1, 3.3, 3.5 GHz ηC 35 - % Input Return Loss Vcc = 36V, Pin = 6.0W F = 3.1, 3.3, 3.5 GHz RL - -6 dB Load Mismatch Tolerance Vcc = 36V, Pin = 6.0W F = 3.1, 3.3, 3.5 GHz VSWR-T - 2:1 - Absolute Maximum Ratings at 25°C Parameter Symbol Rating Units Collector-Emitter Voltage VCES 65 V Emitter-Base Voltage VEBO 3.0 V Collector Current (Peak) IC 3.6 A Power Dissipation @ +25°C PTOT 250 W Storage Temperature TSTG -65 to +200 °C Junction Temperature TJ 200 °C Outline Drawing
Radar Pulsed Power Transistor 30W, 3.1-3.5 GHz, 100µs Pulse, 10% Duty M/A-COM Products Released, 10 Aug 07 PH3135-30M
- North America Tel: 800.366.2266 / Fax: 978.366.2266 Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. Typical RF Performance F (GHz) ZIF (Ω) ZOF (Ω) 3.1 21 + j2.0 13.8 - j11.7 3.3 19 - j2.4 7.7 - j8.2 3.5 16 - j5.1 5.3 - j5.3 RF Test Fixture Impedance Gain vs. Frequency Collector Efficiency vs. Frequency Freq. (GHz) Pin (W) Pout (W) Gain (dB) Ic (A) Eff (%) RL (dB) VSWR-T (3:1) VSWR-S (2:1) S S S 7.5 8.0 8.5 9.0 9.5 Fre q (GHz) Gain (dB) Fre q (GHz) Efficiency (%)
Radar Pulsed Power Transistor 30W, 3.1-3.5 GHz, 100µs Pulse, 10% Duty M/A-COM Products Released, 10 Aug 07 PH3135-30M
- North America Tel: 800.366.2266 / Fax: 978.366.2266 Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. Test Fixture Circuit Dimensions Test Fixture Assembly