PH3134-11S MACOM | Alldatasheet
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NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry Diffused Emitter Ballasting Resistors Gold Metalization System Internal Input and Output Impedance Matching Hermetic Metal/Ceramic Package Absolute Maximum Ratings at 25°C I ,250 -.152-.x0 75.35>-7 StorageTemperature T STG -65 to +200 “‘2 UNLESS IT-ERWISE NCTEC, TZLESANCES ARE INCES =.305’ :MJLLIMETERS =.!3MW> Electrical Characteristics at 25°C Parameter Symbol Min Max Units lest Conditions I 1 I I Collector-Emitter Breakdown Voltage BV,,, 60 - V I,=1 2.5 mA Collector-Emitter Leakage Current Thermal Resistance input Power Power Gain Collector Efficiency input Return Loss Load Mismatch Tolerance ‘Es 1.25 mA V,,=36 V R TWC, 1.4 “CM’ I’,,=36 V, P,,,=ll W, F=3.1,3.25,3.4 GHz GP 8.0 - dB V,,=38 V, Pour=1 1 W, F=3.1, 3.25,3.4 GHz RL 6 - dB I’,,=36 V, P,,,=ll W, F=3.1,3.25,3.4 GHz VSWR-T - 2:l - Vcc=36 V, P,el 1 W, F=3.25 GHz Broadband Test Fixture Impedances F(GHz) z,,m z,Fcm I I A - - Specifications Subject to Change Without Notice. 9-234 North America: Tel. (800) 366-2266 n Asia/Pacific: Tel. +81 (03) 3226-1671 Fax (800) 618-8883 Fax +81 (03) 3226-1451 M/A-COM, Inc. l Europe: Tel. +44 (1344) 869 595 Fax +44 (1344) 300 020
Radar Pulsed Power Transistor, 11 W PH3134-11s v2.00 RF Test Fixture ELECTROLYTIC CAPACITOR 50 uF 50 V BNC CONNECTOR POHWA ELECTRONICS 2451 I I HALLDRY TTSOHSDA GROUND ROLLUVER ,\\ PC B ROGE .025’ 0lClKE,
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Test Fixture PC Board Dimensions TOP VIEW Specifications Subject to Change Without Notice. WA-COM, Inc. 9-235 North America: Tel. (800) 366-2266 n Asia/Pacific: Tel. +81 (03) 3226-1671 n Europe: Tel. +44 (1344) 869 595 Fax (800) 618-8883 Fax +81 (03) 3226-1451 Fax +44(1344)300 020