PH313 NEC | Alldatasheet
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NE C ELECTRONICS INC 30E D MM 6427525 0029623 3 MM T-4I-5 3 7 . PHOTO DIODE € / ’ PH313 SILICON EPITAXIAL PLANAR PIN PHOTO DIODE DETECTOR for DAD, VD PACKAGE DIMENSIONS FEATURES (Unit : mm) © Small clear mold package. 5020.1 4sso4 © Easy optical alignment because of accurate chip location. uigtigte fiat © High Sensitivity. $= 0.52 AW TYP. @2= 780 nm | al rift i wale © High element resistance. TY 1 ai rou eo APPLICATIONS 3 Ps ee Optical head for video and audio disk. Optical detector of tracking and focus signal. UUUU page ~#s ABSOLUTE MAXIMUM RATINGS (T, = 25 °C) 15° 18! 9, Reverse Voltage Vr 20 v TT “Si Reverse Current tn 10 mA F Forward Current ip 10 mA Hs Power Dissipation P 20 mW —~ ALT & Operating Temperature Topt =20 to +80 °c € SHRI TTS: Areas 2 Storage Temperature Tato 40 to +100 °c 7 3. Anode F 0.5, 4. Common Cathode 06 5. Anede & 6. Anodes A 7. anode © 8: Common catnode CHIP PATTERN (Unit : um) 18, = Hy —+ Gi6e
NE C ELECTRONICS INC 30E D M@@ 6427525 0029624 5 mm PH313 el T-41-53 ELECTRO-OPTICAL CHARACTERISTICS (T4 * 25 °C) . [/_“ehanacrenistie—Tavimsor [ain [We [ Wak owt | esr conorions [Bere arent ip a ee [Seen sa [as avd] [ae ting nvm] [ret tine tv] [ Tena Gpsstnes [eg | a a Wntvte] *: A to D Each element capacitance against cathode. **: &,F Gach element capacitance sgainst cathode.