PH312 NEC | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
NE C ELECTRONICS INC 30E D mm 6427525 O029be] T T-H1-53 € / , PHOTO DIODE SILICON EPITAXIAL PLANAR PIN PHOTO DIODE DETECTOR for DAD, VD nnn PACKAGE DIMENSIONS FEATURES {Unit : mm) tase © Small clear mold package. 1.27 0820.27 10.25 © Easy optical alignment because of accurate chip location. eth gry © High Sensitivity. $= 0.52 AW TYP. @A= 780 nm ld ‘| 1 © High element resistance, at 2 typi APPLICATIONS [ a fig Optical heed for video and audio disk. pt i 3 Optical detector of tracking and focus signal. 3 Es ! ABSOLUTE MAXIMUM RATINGS (Ta = 25 °C)
1 Reverse Voltage Va 20 v
lel sLle_i Reverse Current In 10 mA rss Forward Current Ip 10 mA : Power Dissipation P 20 mW € a) pene Operating Temperature Topt 20 to +80 °c , apres 2 Common Cathode ‘Storage Temperature Tato —40 to #100 °c he Anode & 8. Anode F 8. Common Cathode 7. Anode 8
8 Anode A
(Unit : um) fl 2 sce . ist rt € C ‘ 3 . f fie | a we 30 i) 0°! 350: a8 : 1080 Mh Detecting area PABonaing pad
ray : - : - / NE C ELECTRONICS INC 306 D MM 6427525 O02%b22 1 PH312 ; Og ELECTRO-OPTICAL CHARACTERISTICS (Ta = 25 °c) . [= —_Suanacrenisie [svisot [ait [wa [anit rar aro — [_ Bark Gureng tg a e e a Va = 18V,4= 780 am [sieeve a | enna secs egg pe ee J [ fevne nomen three [oe ef pe *: Ato 0 Each siement capacitance against cathode, **: E,F Gach element capacitance against cathode, TYPICAL CHARACTERISTICS (T2565 °c) PETE TT TTT] ——— | ee eS oT = 4 < i fi TTI * ¢ eames es a EO 8S SERRE a SS A ot Oe 7