PH309 NEC | Alldatasheet
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Technical content
-_ - a - NE C ELECTRONICS INC 30E D M@@ 6427525 0029611 7 T-H-S3 O / . PHOTO DIODE SS “PLASTIC MOLDED PIN PHOTO DIODE ee SSSSSSSSSSSSSSSSSSSSSSSSSSSSFSFeFsFFsFSSSSSSSSSSSSFSes
DESCRIPTION
PACKAGE DIMENSIONS PH309 is @ photo diode with PIN structure. It has a wide 10 in-milineters photo-receiving area and high speed response enabling applica- i tions for various remote controlling equipments. The resin {—_——} material itself used for the package has filter effect to pass Ls only infrared. ic KA to" a1ss02 FEATURES TT) © Ultra high speed response. (t,, ty #7 30 ns) = 10° © Coincidence of the wavelength of maximum sensitivity —S with that of an infrared LED. (0 MAX. = 940 nm) y Lo | /| | a} © High sensitivity. (32 nA/Ix) Fi U 3| © Wide dynamic range. t f ABSOLUTE MAXIMUM RATINGS © bo it 02 MAX. Maximum Reverse Voltage (Ta = 25 °C) Pf 1.2 Va 32 Vv “Thos 0.46, Maximum Power Dissipation (Tq = 25°C) 3 | | Po 180 mW 5 i" Maximum Temperatures | | | Operating Temperature Tope 3010485 °C a oe Storage Temperature Trg = —40to +100 °C D—>t—? Anode Cathode
a; — — a oO a ~ NE C ELECTRONICS INC 30€ D M@@ 6427525 O02%b12 59 a PH309 ai _— i T-41-53 ELECTRO-OPTICAL CHARACTERISTICS (Ty = 25 °C) . ~ [——_eeanncrenienie TY arnsoe [a Tee a o | —Fesr eonorToN ad [ark curene A Vato [verano iemax wmitniy ——MAKe|pm | [suanumyiaeichcvonswemoial |e [eae ||| esta [seesratnoniviy | | a | as Rise and fal time of the photocurrent rom 10% 1 | 126 [eee ove | *h=9400m TYPICAL CHARACTERISTICS (Tg = 25 °C) WAVELENGTH SENSITIVITY OINEGTIONAL CHARACTERISTIC 100 Pot AN | RATES a0] “ |- 40° z +60 60" eof SSS WW SX TN 30"
490500600 Too B00 50015003100 1700
A=Wavelength ~am . CAPACITANCE vs. SUPPLY VOLTAGE RISE TIME. suepLy VOLTAGE 10] 60) lS pi sol = ad ot Vp -Supply Voltage ~V ° i 7 0 Ya~Supply Voltage-V L
NE C ELECTRONICS INC 30E D mm@ 6427525 0029613 0 mt egg = __PH309 : . LEAK CURRENT vs. O LEAK CURRENT vs. SUPPLY VOLTAGE ; AMBIENT TEMPERATURE ——= i" i i PU Ep i : Zo ee a a ee ee “oe 2 ee oo J Ey 10 EC 20 Ss 30 Ta~Ambient Temperature—"C Vp-Supply Voltage-V PHOTO CURRENT vs. ILLUMINANCE RELATIVE vs. AMBIENT TEMPERATURE 30) per | fe ee ee { fo H 3” — |S H aa i tos | g mop i C4 _ 3 i 3 : 3 : : = osl “3 29 i 30 0 e Too 00 360 Ey-ilumunance~ix PHOTO CURRENT vs. SUPPLY VOLTAGE PHOTO CURRENT vs. SUPPLY VOLTAGE = = Fe a a | 8 — i 2 : i ’ 2 3 ; % iCal y - + A rs K+ ° 6 En Yo ° os T is Va-Supoly Voltage-V Yq~Supply Voltage -V
NE C ELECTRONICS INC 306 D M@ b4e7SeS 0029614 2 mm PH309 TT T-41-53 POWER DISSIPATION vs. . AMBIENT TEMPERATURE is AE
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. a ° 20 70 $0 30 100 TaAmbient Temperature ~"C HANDLING PRECAUTIONS: 1, The full resinsmolded PH309 has generally a little less mechanical and thermal strength than other resin-molded semi- conductor devices as they have less additives. Therefore please note on the following points. (a) Soldering of leads should be made at the point § mm or more from the root of the leads at 260 °C and within 5s. {b) If the temperature of the molded portion rises in addition to the residual stress between the leads, the possibility that open or short circuit occurs due to the deformation or destruction of the resin will increase. 2. Onccleaning the device: {a) Cleaning with unsuitable solvent may impair the resin if the package and the following solvents should be used at the temperature of less than 45 °C and for less than 3 minutes of immersion time. Ethanol, Methanol \\sopropyl-alcohol {b) Ultrasonic cleaning will add some stress on devices, The degree of the stress differs depending on the oscillation output power, the size of the PCB and the mounting methods of the devices, therefore it should be confirmed by making an experiment at actual conditions that the cleaning does not have any problem on the devices.