PH1090-700B MA-COM | Alldatasheet

Document overview

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Technical content

Features

  • NPN silicon microwave power transistors
  • Common base configuration
  • Broadband Class C operation
  • High efficiency inter-digitized geometry
  • Diffused emitter ballasting resistors
  • Gold metallization system
  • Internal input and output impedance matching
  • Hermetic metal/ceramic package
  • RoHS Compliant Outline Drawing Electrical Specifications: TC = 25 ± 5°C (Room Ambient ) Parameter Test Conditions Frequency Symbol Min Max Units Collector-Emitter Breakdown Voltage I C = 250mA BV CES 80 - V Collector-Emitter Leakage Current V CE = 50V I CES - 25 mA Thermal Resistance Vcc = 50V, Pout = 700W F = 1030, 1090 MHz RTH(JC) - 0.06 °C/W Input Power Vcc = 50V, Pout = 700W F = 1030, 1090 MHz PIN - 125 W Power Gain Vcc = 50V, Pout = 700W F = 1030, 1090 MHz GP 7.5 - dB Collector Efficiency Vcc = 50V, Pout = 700W F = 1030, 1090 MHz ηC 50 - % Input Return Loss Vcc = 50V, Pout = 700W F = 1030, 1090 MHz RL - -10 dB Load Mismatch Tolerance Vcc = 50V, Pout = 700W F = 1030, 1090 MHz VSWR-T - 5:1 - Load Mismatch Stability Vcc = 50V, Pout = 700W F = 1030, 1090 MHz VSWR-S - 1.5:1 - Absolute Maximum Ratings at 25°C Parameter Symbol Rating Units Collector-Emitter Voltage VCES 80 V Emitter-Base Voltage VEBO 3.0 V Collector Current (Peak) IC 70 A Power Dissipation @ +25°C PTOT 2.9 kW Storage Temperature TSTG -65 to +200 °C Junction Temperature TJ 200 °C

Released, 30 May 07 Avionics Pulsed Power Transistor 700W, 1030-1090 MHz, 32μs Pulse, 2% Duty

  • North America Tel: 800.366.2266 / Fax: 978.366.2266 Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. Typical RF Performance Freq. (MHz) Pin (W) Pout (W) Gain (dB) Ic (A) Eff (%) RL (dB) VSWR-S (1.5:1) VSWR-T (5:1) 1030 96 700 8.66 25.4 55.3 -17.5 S P 1090 101 700 8.42 25.7 54.5 -16.7 S P F (MHz) ZIF (Ω) ZOF (Ω) 1030 1.1 - j1.4 1.2 - j0.8 1060 1.1 - j1.2 1.0 - j0.7 1090 1.0 - j1.0 0.8 - j0.7 RF Test Fixture Impedance

Released, 30 May 07 Avionics Pulsed Power Transistor 700W, 1030-1090 MHz, 32μs Pulse, 2% Duty

  • North America Tel: 800.366.2266 / Fax: 978.366.2266 Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. RF Power Transfer Curve 1030 MHz, Gain & Efficiency vs. Output Power 7.0 7.5 8.0 8.5 9.0 300 400 500 600 700 800 Pout (watts) Gain (dB) Collector Efficiency (%) Gain Efficiency 7.0 7.5 8.0 8.5 9.0 300 400 500 600 700 800 Pout (watts) Gain (dB) Collector Efficiency (%) Gain Efficiency RF Power Transfer Curve 1090 MHz, Gain & Efficiency vs. Output Power

Released, 30 May 07 Avionics Pulsed Power Transistor 700W, 1030-1090 MHz, 32μs Pulse, 2% Duty

  • North America Tel: 800.366.2266 / Fax: 978.366.2266 Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. Test Fixture Circuit Dimensions Test Fixture Assembly